Sfoglia per Autore
GaN Vertical Devices: challenges for high performance and stability
2023 Meneghini, Matteo; Fregolent, Manuel; Zagni, Nicolò; DE SANTI, Carlo; Bahat Treidel, Eldad; Brusaterra, Enrico; Brunner, Frank; Hilt, Oliver; Christianhuber, ; Buffolo, Matteo; Marcuzzi, Alberto; Favero, Davide; Del Fiol, Andrea; Verzellesi, Giovanni; Pavan, Paolo; Meneghesso, Gaudenzio; Zanoni, Enrico
Analysis of Current Transport Layer Localized Resistivity Increase After High Stress on InGaN LEDs
2023 Trivellin, Nicola; Buffolo, Matteo; De Santi, Carlo; Zanoni, Enrico; Meneghesso, Gaudenzio; Meneghini, Matteo
Physics-based trap analysis and compact modeling performance evaluation of AlGaN/GaN HEMTs
2023 DE SANTI, Carlo; Modolo, Nicola; Baratella, Giulio; Borga, Matteo; Posthuma, Niels; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Analysis of trapping and detrapping mechanisms in 0.15 μm-gate AlGaN/GaN High Electron Mobility Transistors: explanation of dynamic behaviour of threshold voltage and on-resistance
2023 DE PIERI, Francesco; Fornasier, Mirko; Gao, Zhan; Rampazzo, Fabiana; DE SANTI, Carlo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico
Threshold voltage variation of SiC trench MOSFETs during TDDB stress
2023 Avramenko, Marina; Marcuzzi, Alberto; De Schepper, Luc; Cano, Jean-Francois; Geenen, Filip; DE SANTI, Carlo; Moens, Peter; Meneghini, Matteo
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps
2023 Favero, D; Cavaliere, A; De Santi, C; Borga, M; Goncalez, W; Geens, K; Bakeroot, B; Decoutere, S; Meneghesso, G; Zanoni, E; Meneghini, M
Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells
2023 Nicoletto, Marco; Caria, Alessandro; Santi, Carlo De; Buffolo, Matteo; Huang, Xuanqui; Fu, Houqiang; Chen, Hong; Zhao, Yuji; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs
2023 Gao, Z.; Rampazzo, F; De Santi, C; Fornasier, M; Meneghesso, G; Meneghini, M; Blanck, H; Grunenputt, J; Sommer, D; Chen, Dy; Wen, Kh; Chen, Jt; Zanoni, E
Experimental analysis of degradation of Multi-Quantum Well GaN-based solar cells under current stress
2023 Caria, A.; De Santi, C.; Nicoletto, M.; Buffolo, M.; Huang, X.; Fu, H.; Chen, H.; Zhao, Y.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Thermally-activated failure mechanisms of 0.25 μm RF AlGaN/GaN HEMTs submitted to long-term life tests
2023 Gao, Z; Chiocchetta, F; Rampazzo, F; De Santi, C; Fornasier, M; Meneghesso, G; Meneghini, M; Zanoni, E
Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness
2023 Benato, Andrea; De Santi, Carlo; Borga, Matteo; Bakeroot, Benoit; Filipek, Izabela Kuzma; Posthuma, Niels; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stress
2022 Bertoncello, M; Caria, A; Buffolo, M; De Santi, C; Rampino, S; Pattini, F; Spaggiari, G; Trivellin, N; Vogrig, D; Zanoni, E; Meneghesso, G; Meneghini, M
Dynamic performance of wide bandgap devices
2022 De Santi, C.; Fregolent, M.; Modolo, N.; Nardo, A.; Buffolo, M.; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Analysis and Modeling of VthShift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature
2022 Masin, F.; De Santi, C.; Stockman, A.; Lettens, J.; Geenen, F.; Meneghesso, G.; Zanoni, E.; Moens, P.; Meneghini, M.
Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling
2022 Fregolent, Manuel; Brusaterra, Enrico; DE SANTI, Carlo; Tetzner, Kornelius; W??rfl, Joachim; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Time-dependent degradation of hydrogen-terminated diamond MESFETs
2022 De Santi, C; Pavanello, L; Nardo, A; Veron, C; Rinati, Gv; Cannata, D; Di Pietrantonio, F; Meneghesso, G; Zanoni, E; Meneghini, M
Trap-state mapping to model GaN transistors dynamic performance
2022 Modolo, Nicola; De Santi, Carlo; Minetto, Andrea; Sayadi, Luca; Prechtl, Gerhard; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs
2022 Fregolent, M; Boito, M; Marcuzzi, A; De Santi, C; Chiocchetta, F; Treidel, Eb; Wolf, M; Brunner, F; Hilt, O; Wurfl, J; Meneghesso, G; Zanoni, E; Meneghini, M
Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation
2022 Nicoletto, M.; Caria, A.; De Santi, C.; Buffolo, M.; Huang, X.; Fu, H.; Chen, H.; Zhao, Y.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence
2022 Caria, A.; De Santi, C.; Buffolo, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
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