STOCCO, ANTONIO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 5.497
AS - Asia 2.509
EU - Europa 1.406
AF - Africa 404
SA - Sud America 319
OC - Oceania 42
Continente sconosciuto - Info sul continente non disponibili 26
Totale 10.203
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 5.254
SG - Singapore 929
CN - Cina 533
IT - Italia 220
HK - Hong Kong 219
BR - Brasile 180
DE - Germania 155
VN - Vietnam 151
PL - Polonia 147
FI - Finlandia 129
IN - India 104
FR - Francia 82
SE - Svezia 78
TW - Taiwan 71
JP - Giappone 66
GB - Regno Unito 65
RU - Federazione Russa 61
UA - Ucraina 53
KR - Corea 52
NL - Olanda 51
IE - Irlanda 34
AR - Argentina 29
TR - Turchia 29
CA - Canada 24
MX - Messico 23
MY - Malesia 22
AT - Austria 21
BE - Belgio 21
IQ - Iraq 19
PE - Perù 19
ZA - Sudafrica 19
CI - Costa d'Avorio 18
ES - Italia 18
GE - Georgia 17
KZ - Kazakistan 17
LC - Santa Lucia 17
NO - Norvegia 17
PA - Panama 17
ZW - Zimbabwe 17
AU - Australia 16
CZ - Repubblica Ceca 16
IL - Israele 16
KE - Kenya 16
AO - Angola 15
CY - Cipro 15
DJ - Gibuti 15
ID - Indonesia 15
MR - Mauritania 15
AE - Emirati Arabi Uniti 14
CG - Congo 14
CO - Colombia 14
CW - ???statistics.table.value.countryCode.CW??? 14
EE - Estonia 14
GF - Guiana Francese 14
HN - Honduras 14
HR - Croazia 14
RS - Serbia 14
TJ - Tagikistan 14
VE - Venezuela 14
AM - Armenia 13
EC - Ecuador 13
IR - Iran 13
IS - Islanda 13
KG - Kirghizistan 13
KH - Cambogia 13
LU - Lussemburgo 13
ME - Montenegro 13
AD - Andorra 12
BB - Barbados 12
BW - Botswana 12
CU - Cuba 12
EG - Egitto 12
GM - Gambi 12
MD - Moldavia 12
MG - Madagascar 12
NP - Nepal 12
TT - Trinidad e Tobago 12
BD - Bangladesh 11
BO - Bolivia 11
DO - Repubblica Dominicana 11
ET - Etiopia 11
GT - Guatemala 11
MK - Macedonia 11
MU - Mauritius 11
SA - Arabia Saudita 11
SI - Slovenia 11
SK - Slovacchia (Repubblica Slovacca) 11
TH - Thailandia 11
TN - Tunisia 11
VC - Saint Vincent e Grenadine 11
BY - Bielorussia 10
CR - Costa Rica 10
HU - Ungheria 10
JO - Giordania 10
LV - Lettonia 10
MA - Marocco 10
MW - Malawi 10
NG - Nigeria 10
PK - Pakistan 10
PS - Palestinian Territory 10
Totale 9.758
Salva come PNG Salva come JPEG
Città #
Woodbridge 652
Fairfield 562
Ashburn 547
Singapore 475
Houston 399
Ann Arbor 373
Chandler 252
Seattle 252
Wilmington 250
Santa Clara 224
Hong Kong 192
Cambridge 182
Beijing 170
Jacksonville 162
San Jose 140
Bytom 126
Boardman 118
Princeton 76
Medford 66
Nanjing 59
Des Moines 57
Helsinki 55
Los Angeles 51
Munich 44
Ho Chi Minh City 43
San Diego 40
Tokyo 39
Padova 37
Bengaluru 36
New York 36
Dong Ket 30
Dublin 30
Hanoi 29
Guangzhou 21
Shenyang 21
São Paulo 21
Roxbury 20
Brooklyn 18
Hsinchu 18
Castries 17
Milan 17
Harare 16
Kaohsiung City 16
Roermond 16
Abidjan 15
Chicago 15
Lima 15
Nouakchott 15
Panama City 15
Nairobi 14
Vienna 14
Warsaw 14
Changsha 13
Chennai 13
Djibouti 13
London 13
Luanda 13
Washington 13
Willemstad 13
Dushanbe 12
Hebei 12
Norwalk 12
San Francisco 12
Taipei 12
Yongin-si 12
Andorra la Vella 11
Bishkek 11
Brussels 11
Cayenne 11
Podgorica 11
Tbilisi 11
Addis Ababa 10
Amman 10
Ankara 10
Antananarivo 10
Council Bluffs 10
Dili 10
Havana 10
Phnom Penh 10
Reykjavik 10
Riga 10
Salt Lake City 10
Tel Aviv 10
Yerevan 10
Almaty 9
Brazzaville 9
Charlotte 9
Dallas 9
Denver 9
Frankfurt am Main 9
Gaborone 9
Kingstown 9
Nanchang 9
Niterói 9
Phoenix 9
Redwood City 9
Rome 9
San José 9
Tallinn 9
Tashkent 9
Totale 6.625
Salva come PNG Salva come JPEG
Nome #
Reliability and failure mechanisms of GaN HEMT devices suitable for high-frequency and high-power applications 579
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 245
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 237
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 219
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 214
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 209
Reliability issues of Gallium Nitride High Electron Mobility Transistors 194
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 192
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 187
Proton induced trapping effect on space compatible GaN HEMTs 183
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions 182
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements 177
Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons 177
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 177
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 174
Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena 173
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 170
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 168
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model 167
Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices 167
Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs 162
Double Control Gate Field-Effect Transistor for Area Efficient and Cost Effective Applications 155
Single- and double-heterostructure GaN-HEMTs devices for power switching applications 154
GaN HEMT Reliability: From Time Dependent Gate Degradation to On-state Failure Mechanisms 153
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 151
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs 147
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias 144
Characterization of High-Voltage Charge-Trapping Effects in GaN-based Power HEMTs 144
Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method 143
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 142
An investigation of reliability on hybrid substrates GaN-HEMTs 140
Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors 139
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 138
Characterization of Localized degradation in reverse-biased GaN HEMTs by scanning Transmission Electron Microscopy and Electron Holography 134
Reliability of Gallium Nitride microwave transistors: A framework for the evaluation of failure mechanisms and instabilities, from accelerated testing to failure analysis and process improvement 134
Failure signatures on 0.25 mu m GaN HEMTs for high-power RF applications 130
Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach 129
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors during RF Operation: Correlation with GaN Buffer Design 129
High-Voltage Double-Pulsed Measurement System for GaN-based Power HEMTs 128
Characterization Of Gan-Based Single- And Double-Heterostructure Devices 125
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 123
A study of trapping phenomena on Recessed-Gate AlGaN/GaN-on- Silicon HEMT 120
GaN Hemt Degradation induced by Reverse Gate Bias Stress 120
Influence of Fluorine-Based Dry Etching on Electrical Parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors 118
New reliability understanding on GaN-HEMTs 118
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 118
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 117
Degradation of AlGaN/GaN HEMTs below the “critical voltage”: a time-dependent analysis 115
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 115
High Robustness GaN HEMT Subject to Reverse Bias Stress 114
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMTThe 1st IEEE Workshop on Wide Bandgap Power Devices and Applications 113
Breakdown Walkout induced by reverse bias stress in AlGaN/GaN HEMTs 111
Combined electro-optical analysis of trapping effects in AlGaN/GaN HEMTs 110
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 109
Time dependent Degradation of AlGaN/GaN HEMTs 108
Novel high-voltage double-pulsed system for GaN-based power HEMTs 107
Trap analysis on GaN HEMT after DC accelerated tests 106
Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices 105
Reliability improvement of AlGaN/GaN HEMTs for space applications 105
Simple technique for failure modes detection on high-performances space designed GaN HEMTs 104
Electrical and reliability investigation of AlGaN/GaN HEMTs grown on 8° off-axis 4H-SiC 98
Kink and Cathodoluminescence in AlGaN/GaN HEMTs 97
Evidence for breakdown luminescence in AlGaN/GaN HEMTs 93
Reverse-Bias Degradation of AlGaN/GaN Vertical Schottky Diodes: An Investigation Based on Electrical and Capacitive Measurements 93
Trapping and high-field characterization in Recessed-Gate AlGaN/GaN-on-Silicon HEMT 90
Study of Time-Dependent Degradation of Reverse Biased AlGaN/GaN HEMTs 90
Trap related instabilities and localized damages induced by reverse bias” 88
Latest reliability results in GaN HEMTs devices 82
Deep-Levels characterization in AlGaN/GaN High Electron Mobility Transistors by means of Drain Current Transient Analysis 78
Reverse gate bias stress induced degradation of GaN HEMT 75
Degradation mechanisms in AlGaN/GaN HEMTs submitted to off and on-state stress conditions 71
Totale 10.223
Salva come PNG Salva come JPEG
Categoria #
all - tutte 30.695
article - articoli 9.405
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 484
Totale 40.584
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021364 0 0 0 0 0 0 26 76 69 45 75 73
2021/2022733 22 113 91 36 21 29 32 71 36 35 97 150
2022/2023759 115 13 10 80 147 119 4 71 120 16 35 29
2023/2024481 43 47 37 32 35 73 47 24 25 25 35 58
2024/20251.690 13 103 64 117 255 141 81 144 81 43 297 351
2025/20263.204 196 552 650 662 703 245 196 0 0 0 0 0
Totale 10.223