In this paper we report on the characterization of AlGaN/GaN HEMT with recessed gate processed on silicon substrate. Trapping effects on samples with same gate foot width (75 nm) and different recess width (50, 80, 200 nm) are studied by means of dynamic IV and electroluminescence measurements.
A study of trapping phenomena on Recessed-Gate AlGaN/GaN-on- Silicon HEMT
RONCHI, NICOLO';MENEGHINI, MATTEO;STOCCO, ANTONIO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2010
Abstract
In this paper we report on the characterization of AlGaN/GaN HEMT with recessed gate processed on silicon substrate. Trapping effects on samples with same gate foot width (75 nm) and different recess width (50, 80, 200 nm) are studied by means of dynamic IV and electroluminescence measurements.
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