We report in this paper the effect of the reverse bias stress in AlGaN/GaN HEMTs, observing the current trend during the stress and its correlation with the emission intensity. The increase of the breakdown voltage after the stress, with the other parameters variations, can be related with a charge trapping phenomena in the gate-to-drain channel region.
Breakdown Walkout induced by reverse bias stress in AlGaN/GaN HEMTs
STOCCO, ANTONIO;RONCHI, NICOLO';ZANON, FRANCO;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO
2009
Abstract
We report in this paper the effect of the reverse bias stress in AlGaN/GaN HEMTs, observing the current trend during the stress and its correlation with the emission intensity. The increase of the breakdown voltage after the stress, with the other parameters variations, can be related with a charge trapping phenomena in the gate-to-drain channel region.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
