Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis

Trap characterization represents an important step towards the improvement of the performances and reliability of GaNbased HEMT devices. Double-pulsed measurements and long drain current transient analysis are effective methods to gather complementary information on traps identification and localization: activation energy and time constant of the traps may be extrapolated through drain current transients measurements; on the other hand, the analysis of the dynamic VTH shift and gm peak reduction, based on doublepulsed measurements, allows to understand whether the trap states are located below the gate (VTH shift) or in drain-gate access region (gm peak reduction). The aim of this work is to experimentally investigate the correlation between these two characterization techniques by applying them to a series of identical devices and comparing results on individual samples.