This paper introduces a novel three-dimensional approach to model threshold voltage variation (Delta V-th) during time-dependent dielectric breakdown (TDDB) stress of SiC trench MOSFETs in a wide temperature range T=0 ... 250 degrees C and studies the processes of Delta V-th recovery at room temperature.
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress
Marcuzzi, A.;De Santi, C.;Meneghini, M.
2024
Abstract
This paper introduces a novel three-dimensional approach to model threshold voltage variation (Delta V-th) during time-dependent dielectric breakdown (TDDB) stress of SiC trench MOSFETs in a wide temperature range T=0 ... 250 degrees C and studies the processes of Delta V-th recovery at room temperature.
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