BUFFOLO, MATTEO
 Distribuzione geografica
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Continente #
NA - Nord America 15.283
AS - Asia 12.536
EU - Europa 7.014
AF - Africa 1.931
SA - Sud America 1.697
Continente sconosciuto - Info sul continente non disponibili 415
OC - Oceania 179
Totale 39.055
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Nazione #
US - Stati Uniti d'America 14.026
SG - Singapore 3.458
IT - Italia 2.512
CN - Cina 2.418
VN - Vietnam 1.806
HK - Hong Kong 1.217
BR - Brasile 940
DE - Germania 533
BD - Bangladesh 502
FR - Francia 482
PL - Polonia 466
IN - India 432
IE - Irlanda 322
CA - Canada 292
GB - Regno Unito 286
FI - Finlandia 279
JP - Giappone 277
KR - Corea 255
NL - Olanda 221
TR - Turchia 191
RU - Federazione Russa 181
AR - Argentina 170
IQ - Iraq 166
TW - Taiwan 159
AT - Austria 155
SE - Svezia 139
SA - Arabia Saudita 135
ID - Indonesia 129
PH - Filippine 127
ES - Italia 116
MX - Messico 116
PK - Pakistan 107
ZA - Sudafrica 107
EC - Ecuador 97
MA - Marocco 96
MY - Malesia 91
CO - Colombia 88
CH - Svizzera 85
UA - Ucraina 84
VE - Venezuela 82
EG - Egitto 76
CL - Cile 73
ET - Etiopia 73
JM - Giamaica 73
BE - Belgio 69
BJ - Benin 67
GR - Grecia 67
UZ - Uzbekistan 67
HN - Honduras 63
IL - Israele 63
CR - Costa Rica 62
CV - Capo Verde 62
KE - Kenya 62
NI - Nicaragua 62
NP - Nepal 60
DZ - Algeria 59
HU - Ungheria 59
PA - Panama 59
AL - Albania 58
DK - Danimarca 58
PS - Palestinian Territory 58
UY - Uruguay 56
AO - Angola 54
BA - Bosnia-Erzegovina 53
JO - Giordania 53
LB - Libano 53
PE - Perù 53
AE - Emirati Arabi Uniti 52
IR - Iran 52
MK - Macedonia 52
RS - Serbia 52
AM - Armenia 51
AZ - Azerbaigian 51
NO - Norvegia 51
PY - Paraguay 50
BB - Barbados 49
BG - Bulgaria 49
GA - Gabon 49
GT - Guatemala 49
SK - Slovacchia (Repubblica Slovacca) 49
CI - Costa d'Avorio 48
LY - Libia 48
MZ - Mozambico 47
TN - Tunisia 47
TT - Trinidad e Tobago 47
CZ - Repubblica Ceca 46
DO - Repubblica Dominicana 46
HR - Croazia 46
MG - Madagascar 46
ML - Mali 46
MR - Mauritania 46
CY - Cipro 45
GF - Guiana Francese 45
GN - Guinea 45
KH - Cambogia 45
MD - Moldavia 45
AU - Australia 44
LA - Repubblica Popolare Democratica del Laos 44
NZ - Nuova Zelanda 44
RO - Romania 44
Totale 36.587
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Città #
Singapore 2.053
San Jose 2.041
Ashburn 2.032
Hong Kong 1.038
Santa Clara 768
Fairfield 577
Ho Chi Minh City 572
Beijing 518
Los Angeles 494
Council Bluffs 484
Padova 480
Hanoi 431
Bytom 361
Woodbridge 319
Chandler 303
Dublin 300
Houston 283
New York 281
Boardman 256
Seattle 213
Cambridge 209
Ann Arbor 201
Padua 194
Lauterbourg 191
Munich 183
Dallas 182
Wilmington 163
Chicago 161
Riese Pio X 137
Da Nang 131
Milan 129
Buffalo 124
Orem 121
Tokyo 121
Rome 119
Helsinki 115
São Paulo 112
Hefei 110
Atlanta 109
Shanghai 95
Montreal 93
Turku 91
Denver 83
Vienna 83
Phoenix 82
Medford 81
Princeton 81
San Diego 81
Haiphong 80
Guangzhou 76
Nuremberg 76
Brooklyn 73
London 72
Warsaw 68
The Dalles 67
Cotonou 66
Bologna 64
Managua 60
Trebaseleghe 60
Baghdad 59
Frankfurt am Main 59
Salt Lake City 58
Des Moines 57
San Francisco 57
Addis Ababa 56
Seoul 54
Tashkent 54
Toronto 54
Jeddah 53
Nairobi 53
Stockholm 53
Panama City 52
Praia 52
Montevideo 50
Amman 49
Ankara 48
Boston 48
Johannesburg 48
Redondo Beach 48
Chennai 47
Libreville 47
Abidjan 46
Baku 46
Amsterdam 45
Bridgetown 45
Kingston 45
Luanda 45
Nouakchott 44
Bamako 43
Berlin 43
Conakry 43
Naples 43
Phnom Penh 43
Antananarivo 42
Lusaka 42
Maputo 42
San José 42
New Delhi 41
Bengaluru 40
Hải Dương 40
Totale 20.124
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Nome #
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 798
Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements 603
Semi-Transparent Perovskite Solar Cells: Performance and Perspectives 516
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 467
Long-Term Analysis of Temperature and Current-Dependent Degradation in Green High-Power Light-Emitting Diodes 391
Hail Damage Investigation in Heterojunction Silicon Photovoltaic Modules: A Real-World Case Study 389
GaN-based InGaN/GaN MQWs solar cells for innovative applications: performance and modeling 358
Trapping and Reliability Properties of Al2O3 Gate Dielectrics Obtained with Stacked ALD Deposition 329
Modeling of the electrical characteristics and degradation mechanisms of UV-C LEDs 320
Modeling the optical degradation kinetics of UV-C LEDs 319
Analysis of extrinsic failure mechanisms of high-power blue, red, and white LEDs for horticulture and street lighting 309
Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results 302
Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stress 293
Recoverable degradation of FAPbBr3 perovskite solar cells under reverse-bias: A combined electro-optical investigation 266
Failure causes and mechanisms of retrofit LED lamps 263
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 251
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations 250
Reliability of III-V laser diodes and LEDs for lighting and telecommunication applications 243
Characterization and C-DLTS analysis of antimony selenide solar cells 242
Analysis of the mechanisms limiting the reliability of retrofit LED lamps 239
Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis 237
Impact of the oxide aperture width on the degradation of 845 nm VCSELs for silicon photonics 234
Fast Characterization of Power LEDs: Circuit Design and Experimental Results 232
Reliability of blue-emitting Eu2+-doped phosphors for laser-lighting applications 224
Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact 223
Reliability of High Power LEDs: from gradual to catastrophic failure 222
Changes in the extraction and collection efficiency of GaN-based MQW solar cells under optical step-stress 221
Semitransparent Perovskite Solar Cells for Si Tandem and Agrivoltaic Integration 219
Optical Power Degradation Related to Turn-On in Commercial 265 nm UV-C LEDs 215
InGaN/GaN Multiple Quantum Wells solar cells: a trade-off in p-GaN thickness, to optimize reliability and quantum efficiency 215
Inactivating SARS-CoV-2 Using 275 nm UV-C LEDs through a Spherical Irradiation Box: Design, Characterization and Validation 213
Defects, performance, and reliability in UVC LEDs 212
Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation 211
Aging behavior, reliability, and failure physics of GaN-based optoelectronic components 211
Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs 211
Degradation Mechanisms in High-Power LEDs: Thermal Analysis of Failure Modes 209
Challenges and perspectives for vertical gan-on-si trench mos reliability: From leakage current analysis to gate stack optimization 207
Addressing the oxide-aperture dependency of the degradation of 845 nm VCSELs for silicon photonics 206
Challenges for highly reliable GaN-based LEDs 206
Solid State Lighting Systems for horticulture: Impact of LED degradation on light spectrum and intensity 205
Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress 205
Degradation processes of 280 nm high power DUV LEDs: Impact on parasitic luminescence 205
GaN-based power devices: Physics, reliability, and perspectives 203
ANALYSIS OF REVERSE-BIAS STABILITY OF FAPbBr3 SEMI-TRANSPARENT PEROVSKITE SOLAR CELLS 202
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress 198
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density 191
Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon 191
Demonstration of current-dependent degradation of quantum-dot lasers grown on silicon: Role of defect diffusion processes 190
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations 190
Long-term (8000 h) reliability and failures of high-power LEDs for outdoor lighting stressed at high ambient temperatures 189
Efficiency- and lifetime-limiting effects of commercially available UVC LEDs: a review 189
Origin of the Diffusion-Related Optical Degradation of 1.3 μm Inas QD-LDs Epitaxially Grown on Silicon Substrate 189
LED lighting: nuove piattaforme tecnologiche per l’illuminazione ad alta efficienza 187
Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+ n− n diodes: The road to reliable vertical MOSFETs 186
Modeling of the Optical and Electrical Degradation of 845 nm VCSILs 186
UV LED reliability: degradation mechanisms and challenges 185
Electrical overstress robustness of latest generation LEDs for general lighting 185
Defects and Reliability of GaN-Based LEDs: Review and Perspectives 185
V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis 184
Influence of V-pits on the electro-optical properties of high-periodicity InGaN MQWs 183
Analysis of Current Transport Layer Localized Resistivity Increase After High Stress on InGaN LEDs 183
Quality Assessment of Perovskite Solar Cells: An Industrial Point of View 182
Towards high reliability GaN LEDs: Understanding the physical origin of gradual and catastrophic failure 181
Scaling of GaN HEMTs for microwave and millimeter-wave applications: achieving control of short-channel effects, deep levels and reliability 180
Current induced degradation study on state of the art DUV LEDs 180
Glass-ceramic composites for high-power white-light-emitting diodes 180
Analysis and design of SARS-CoV-2 disinfection chambers based on UVC LEDs 178
White-light sources based on GaN laser diodes: Analysis and application study 178
Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits 178
Degradation Processes and Aging in Quantum Dot Lasers on Silicon 177
Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage 177
Nuove strategie per le sorgenti LED ad alta luminanza: uno sguardo al futuro 176
Full Optical Contactless Thermometry Based on LED Photoluminescence 176
A review of the reliability of integrated ir laser diodes for silicon photonics 176
GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405 nm optical stress 175
Antimony selenide solar cells: non-ideal deep level response and study of trap-filling transients 175
III-N optoelectronics: defects, reliability and challenges 175
Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: From interdiffusion effects to hot-electrons degradation 175
Defects and reliability of UVC-LEDs 174
Uv-based technologies for sars-cov2 inactivation: Status and perspectives 173
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics 173
Laser-based lighting: Experimental analysis and perspectives 172
Physical origin of the optical degradation of InAs quantum dot lasers 172
Modeling of Transport Mechanisms in Silicon Heterojunction Solar Cells: Trap-Assisted Tunneling at the Emitter Interface 171
Long-term degradation mechanisms of mid-power LEDs for lighting applications 171
Origin of the low-forward leakage current in InGaN-based LEDs 171
Degradation mechanisms of InAs quantum dot 1.3μm laser diodes epitaxially grown on silicon 171
Failures of LEDs in Real-World Applications: A Review 169
Hydrogen-terminated diamond MESFETs: Operating principles, static and dynamic performance, and reliability 169
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs 168
Defect-related degradation of III-V/Silicon 1.55 μm DBR laser diodes 168
Review on the degradation of GaN-based lateral power transistors 167
Ageing effects on optical power characteristics and defects in SQW UV-C LEDs 167
Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate 167
Degradation Physics of UV LEDs: from experimental data to models 166
V-pits and trench defects in GaN-based optoelectronic devices: Extensive characterization and modeling 166
Robustness and reliability of high-power white LEDs under high-temperature, high-current stress 165
Understanding the Optical Degradation of 845 nm Micro-Transfer-Printed VCSILs for Photonic Integrated Circuits 165
Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells 164
Analysis of dislocation-related and point-defects in III-As layers by extensive DLTS study 164
Totale 22.219
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Categoria #
all - tutte 105.112
article - articoli 51.476
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 244
Totale 156.832
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022883 0 98 82 35 15 48 107 98 55 34 122 189
2022/20231.144 152 31 25 56 151 108 81 99 167 24 150 100
2023/20241.836 137 264 211 149 139 208 183 87 94 115 116 133
2024/20255.890 68 369 363 280 599 502 312 443 349 249 889 1.467
2025/202623.947 1.115 1.347 3.347 3.396 2.313 1.055 3.414 2.030 2.307 1.261 1.424 938
2026/20273.352 1.887 1.465 0 0 0 0 0 0 0 0 0 0
Totale 39.055