BISI, DAVIDE
 Distribuzione geografica
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Continente #
NA - Nord America 3.680
EU - Europa 590
AS - Asia 578
OC - Oceania 4
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
SA - Sud America 1
Totale 4.855
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Nazione #
US - Stati Uniti d'America 3.674
SG - Singapore 235
CN - Cina 201
IT - Italia 184
DE - Germania 98
FI - Finlandia 93
SE - Svezia 51
FR - Francia 38
TW - Taiwan 37
RU - Federazione Russa 36
IN - India 34
GB - Regno Unito 32
KR - Corea 26
UA - Ucraina 16
HK - Hong Kong 15
JP - Giappone 14
IE - Irlanda 11
NL - Olanda 11
BE - Belgio 9
CA - Canada 6
ES - Italia 5
ID - Indonesia 4
IL - Israele 4
TR - Turchia 4
AT - Austria 2
AU - Australia 2
IR - Iran 2
NZ - Nuova Zelanda 2
BG - Bulgaria 1
BR - Brasile 1
CH - Svizzera 1
CZ - Repubblica Ceca 1
EG - Egitto 1
EU - Europa 1
KZ - Kazakistan 1
MY - Malesia 1
RO - Romania 1
Totale 4.855
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Città #
Fairfield 590
Woodbridge 492
Houston 330
Ann Arbor 275
Ashburn 257
Seattle 216
Chandler 198
Santa Clara 194
Wilmington 194
Cambridge 167
Singapore 123
Boardman 98
Medford 60
Princeton 60
Des Moines 57
Padova 48
San Diego 44
Helsinki 42
Beijing 40
Nanjing 39
Bengaluru 14
Guangzhou 14
Norwalk 12
Roxbury 12
Dublin 11
Milan 11
Shenyang 11
Taipei 10
Nanchang 9
New York 9
Phoenix 9
Hsinchu 8
Hebei 7
Hong Kong 7
Taichung 7
Cagliari 6
Changsha 6
Munich 6
Riese Pio X 6
Tokyo 6
Washington 6
Central 5
Dresden 5
Falkenstein 5
Gangdong-gu 5
Gothenburg 5
Jacksonville 5
Redwood City 5
Suwon 5
Indiana 4
Jiaxing 4
London 4
Mestre 4
Portland 4
Rockville 4
Roermond 4
Shanghai 4
Tainan City 4
Bolu 3
Chennai 3
Duncan 3
Elst 3
Fossò 3
Jinan 3
Kozhikode 3
Leuven 3
Lompoc 3
Los Angeles 3
Mestrino 3
New Bedfont 3
Ogden 3
Santa Barbara 3
Taoyuan District 3
Ternopil 3
Tianjin 3
Tsukuba 3
Valencia 3
Ventura 3
Angers 2
Bandung 2
Bhopal 2
Bologna 2
Borås 2
Cervarese Santa Croce 2
Chemnitz 2
Council Bluffs 2
Delhi 2
Ferrara 2
Fort Worth 2
Frankfurt am Main 2
Fremont 2
Gangbuk-gu 2
Grenoble 2
Guiyang 2
Gunzenhausen 2
Gävle 2
Hanam 2
Hangzhou 2
Heverlee 2
Jakarta 2
Totale 3.891
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Nome #
Characterization of Charge Trapping Phenomena in GaN-based HEMTs 287
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 169
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 140
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 132
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 120
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 119
Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena 118
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 113
Proton induced trapping effect on space compatible GaN HEMTs 110
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs 109
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements 104
Trapping phenomena in AlGaN/GaN HEMTs: A study based on pulsed and transient measurements 103
Trapping and Reliability assessment in d-mode GaN-based MIS-HEMTs for Power Applications 97
Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs 95
Reliability of Power Devices: Bias-Induced Threshold Voltage Instability and Dielectric Breakdown in GaN MIS-HEMTs 93
Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors 92
Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs 92
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 90
Field-dependent degradation mechanisms in GaN-based HEMTs 89
Reliability and parasitic issues in GaN-based power HEMTs: A review 86
On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors 84
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs 84
Influence of Fluorine-Based Dry Etching on Electrical Parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors 83
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate 82
Trap investigation under class AB operation in AlGaN/GaN HEMTs based on output-admittance frequency dispersion, pulsed and transient measurements 81
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs 81
Characterization of High-Voltage Charge-Trapping Effects in GaN-based Power HEMTs 80
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors 80
Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate 80
Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices 80
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors during RF Operation: Correlation with GaN Buffer Design 79
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics 78
Observation of hot electron and impact ionization in N-Polar GaN MIS-HEMTs 75
Field plate related reliability improvements in GaN-on-Si HEMTs 74
Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs 73
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 72
Temperature-dependent dynamic RON in GaN-based MIS-HEMTs: Role of surface traps and buffer leakage 72
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 71
Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3dielectrics grown on GaN 68
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 68
High-Voltage Double-Pulsed Measurement System for GaN-based Power HEMTs 67
Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons 65
Breakdown investigation in GaN-based MIS-HEMT devices 65
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 64
Dielectric related issues in GaN based MIS HEMTs 63
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 60
Novel high-voltage double-pulsed system for GaN-based power HEMTs 56
Traps characterization in AlGaN/GaN HEMTs by means of Drain Current Transient Measurements 55
Reverse-Bias Degradation of AlGaN/GaN Vertical Schottky Diodes: An Investigation Based on Electrical and Capacitive Measurements 52
Impact of iron doping on buffer traps and current collapse in GaN-based HEMTs 52
Instability of Dynamic- RONand Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors 50
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 50
Positive and negative Vth instabilities in Vertical GaN-on-GaN FinFET 44
Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices 40
Effects of Thermal Annealing on Current Degradation in Enhancement Mode Pd gate InAlAs/InGaAs/InP pHEMTs 36
Ron Collapse, Breakdown and Degradation of d-mode MIS-HEMTs Based on GaN on Si Technology 35
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 35
Deep-Levels characterization in AlGaN/GaN High Electron Mobility Transistors by means of Drain Current Transient Analysis 34
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 30
Transient Performance, Breakdown And Degradation Of Power Transistors GaN On Si Technology 26
Investigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on silicon 24
Totale 4.906
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Categoria #
all - tutte 18.782
article - articoli 8.843
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 365
Totale 27.990
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020287 0 0 0 0 0 0 0 0 106 97 64 20
2020/2021414 28 26 13 29 37 24 16 71 49 30 55 36
2021/2022692 19 132 72 35 31 20 47 75 30 24 58 149
2022/2023601 103 8 8 53 131 90 5 43 91 14 43 12
2023/2024344 36 43 31 33 24 36 35 11 19 14 23 39
2024/2025745 11 95 55 54 215 111 73 116 15 0 0 0
Totale 4.906