BISI, DAVIDE
 Distribuzione geografica
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Continente #
NA - Nord America 4.107
AS - Asia 1.391
EU - Europa 1.115
AF - Africa 317
SA - Sud America 237
OC - Oceania 40
Continente sconosciuto - Info sul continente non disponibili 15
Totale 7.222
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Nazione #
US - Stati Uniti d'America 3.921
SG - Singapore 409
CN - Cina 294
IT - Italia 226
HK - Hong Kong 187
BR - Brasile 148
DE - Germania 119
PL - Polonia 112
FI - Finlandia 106
SE - Svezia 63
FR - Francia 52
RU - Federazione Russa 51
GB - Regno Unito 48
IN - India 47
TW - Taiwan 42
KR - Corea 38
JP - Giappone 36
NL - Olanda 26
UA - Ucraina 26
IE - Irlanda 23
VN - Vietnam 23
MX - Messico 22
CA - Canada 21
TR - Turchia 20
ES - Italia 17
BE - Belgio 16
HN - Honduras 16
AT - Austria 15
CY - Cipro 15
GF - Guiana Francese 14
ID - Indonesia 14
LB - Libano 14
AM - Armenia 13
CI - Costa d'Avorio 13
CZ - Repubblica Ceca 13
EG - Egitto 13
KG - Kirghizistan 13
PT - Portogallo 13
VE - Venezuela 13
AE - Emirati Arabi Uniti 12
CG - Congo 12
EE - Estonia 12
IQ - Iraq 12
JM - Giamaica 12
KH - Cambogia 12
LV - Lettonia 12
TJ - Tagikistan 12
UZ - Uzbekistan 12
ZA - Sudafrica 12
AL - Albania 11
BG - Bulgaria 11
GP - Guadalupe 11
IL - Israele 11
LU - Lussemburgo 11
MG - Madagascar 11
NP - Nepal 11
SA - Arabia Saudita 11
AU - Australia 10
AZ - Azerbaigian 10
BS - Bahamas 10
EC - Ecuador 10
GH - Ghana 10
JO - Giordania 10
MA - Marocco 10
MR - Mauritania 10
NI - Nicaragua 10
NO - Norvegia 10
PA - Panama 10
TN - Tunisia 10
ZW - Zimbabwe 10
AD - Andorra 9
AR - Argentina 9
BD - Bangladesh 9
BO - Bolivia 9
BW - Botswana 9
DJ - Gibuti 9
DK - Danimarca 9
GN - Guinea 9
IR - Iran 9
KZ - Kazakistan 9
ME - Montenegro 9
MK - Macedonia 9
MY - Malesia 9
NC - Nuova Caledonia 9
NG - Nigeria 9
PK - Pakistan 9
CH - Svizzera 8
CL - Cile 8
CV - Capo Verde 8
CW - ???statistics.table.value.countryCode.CW??? 8
DO - Repubblica Dominicana 8
GE - Georgia 8
GR - Grecia 8
GT - Guatemala 8
HU - Ungheria 8
KE - Kenya 8
MD - Moldavia 8
ML - Mali 8
MN - Mongolia 8
NE - Niger 8
Totale 6.866
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Città #
Fairfield 590
Woodbridge 492
Houston 332
Ashburn 310
Ann Arbor 275
Singapore 246
Seattle 219
Santa Clara 199
Chandler 198
Wilmington 194
Hong Kong 171
Cambridge 167
Boardman 98
Bytom 97
Beijing 84
Medford 60
Princeton 60
Des Moines 57
Padova 51
Helsinki 46
San Diego 44
Nanjing 39
Los Angeles 21
Dublin 19
New York 18
Munich 17
Guangzhou 16
Milan 16
Bengaluru 15
Tokyo 15
Abidjan 12
Dushanbe 12
Norwalk 12
Roxbury 12
Shenyang 12
Bishkek 11
Brooklyn 11
Buffalo 11
Phnom Penh 11
Santa Barbara 11
Taipei 11
Tashkent 11
Yerevan 11
Accra 10
Amman 10
Antananarivo 10
Harare 10
Ho Chi Minh City 10
Managua 10
Nassau 10
Nouakchott 10
Redondo Beach 10
Riga 10
São Paulo 10
Tallinn 10
Andorra la Vella 9
Cayenne 9
Conakry 9
Hefei 9
Nanchang 9
Panama City 9
Phoenix 9
Podgorica 9
Baku 8
Council Bluffs 8
Hsinchu 8
Kigali 8
Nuremberg 8
Taichung 8
Ulan Bator 8
Vienna 8
Willemstad 8
Bamako 7
Cairo 7
Dakar 7
Djibouti 7
Gothenburg 7
Hebei 7
Kingston 7
London 7
Noumea 7
San Francisco 7
Sanaa 7
Skopje 7
Sofia 7
Tel Aviv 7
Tirana 7
Vientiane 7
Warsaw 7
Brazzaville 6
Cagliari 6
Castries 6
Changsha 6
Chennai 6
Chicago 6
Dili 6
Falkenstein 6
Guatemala City 6
Havana 6
Istanbul 6
Totale 4.763
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Nome #
Characterization of Charge Trapping Phenomena in GaN-based HEMTs 398
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 220
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 182
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 169
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 165
Proton induced trapping effect on space compatible GaN HEMTs 163
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 162
Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena 158
Trapping phenomena in AlGaN/GaN HEMTs: A study based on pulsed and transient measurements 153
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements 146
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 146
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs 145
Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs 145
Field-dependent degradation mechanisms in GaN-based HEMTs 141
Trapping and Reliability assessment in d-mode GaN-based MIS-HEMTs for Power Applications 136
Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs 132
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors 131
Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors 126
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation 125
Temperature-dependent dynamic RON in GaN-based MIS-HEMTs: Role of surface traps and buffer leakage 123
Reliability of Power Devices: Bias-Induced Threshold Voltage Instability and Dielectric Breakdown in GaN MIS-HEMTs 123
On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors 123
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics 122
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs 122
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs 122
Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices 121
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate 121
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 119
Characterization of High-Voltage Charge-Trapping Effects in GaN-based Power HEMTs 117
Reliability and parasitic issues in GaN-based power HEMTs: A review 117
Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate 115
Observation of hot electron and impact ionization in N-Polar GaN MIS-HEMTs 115
Field plate related reliability improvements in GaN-on-Si HEMTs 112
Trap investigation under class AB operation in AlGaN/GaN HEMTs based on output-admittance frequency dispersion, pulsed and transient measurements 111
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors during RF Operation: Correlation with GaN Buffer Design 111
High-Voltage Double-Pulsed Measurement System for GaN-based Power HEMTs 109
Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3dielectrics grown on GaN 108
Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons 107
Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs 106
Influence of Fluorine-Based Dry Etching on Electrical Parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors 103
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 101
Breakdown investigation in GaN-based MIS-HEMT devices 101
Dielectric related issues in GaN based MIS HEMTs 101
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 101
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 99
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 98
Instability of Dynamic- RONand Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors 94
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 92
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 87
Novel high-voltage double-pulsed system for GaN-based power HEMTs 86
Traps characterization in AlGaN/GaN HEMTs by means of Drain Current Transient Measurements 81
Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices 80
Positive and negative Vth instabilities in Vertical GaN-on-GaN FinFET 77
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 72
Reverse-Bias Degradation of AlGaN/GaN Vertical Schottky Diodes: An Investigation Based on Electrical and Capacitive Measurements 69
Impact of iron doping on buffer traps and current collapse in GaN-based HEMTs 69
Effects of Thermal Annealing on Current Degradation in Enhancement Mode Pd gate InAlAs/InGaAs/InP pHEMTs 66
Deep-Levels characterization in AlGaN/GaN High Electron Mobility Transistors by means of Drain Current Transient Analysis 66
Ron Collapse, Breakdown and Degradation of d-mode MIS-HEMTs Based on GaN on Si Technology 62
Transient Performance, Breakdown And Degradation Of Power Transistors GaN On Si Technology 55
Investigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on silicon 46
Totale 7.273
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Categoria #
all - tutte 24.308
article - articoli 11.252
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 441
Totale 36.001
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021347 0 0 0 29 37 24 16 71 49 30 55 36
2021/2022692 19 132 72 35 31 20 47 75 30 24 58 149
2022/2023601 103 8 8 53 131 90 5 43 91 14 43 12
2023/2024344 36 43 31 33 24 36 35 11 19 14 23 39
2024/20251.421 11 95 55 54 215 111 73 116 69 34 265 323
2025/20261.691 218 478 611 384 0 0 0 0 0 0 0 0
Totale 7.273