Breakdown mechanisms in AlGaN/GaN HEMT devices are here analyzed, placing particular emphasis in the analysis of GaN based device grown on silicon substrate. Based on combined experimental data and bi-dimensional numerical simulation we demonstrate that many physical mechanisms can contribute to increase the leakage current leading to the final breakdown of the device. In particular we show how band-toband phenomena, rather than impact ionization, can be responsible of the premature breakdown even in double-heterostructure HEMTs.

Breakdown investigation in GaN-based MIS-HEMT devices

MARINO, FABIO ALESSIO;BISI, DAVIDE;MENEGHINI, MATTEO;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO
2014

Abstract

Breakdown mechanisms in AlGaN/GaN HEMT devices are here analyzed, placing particular emphasis in the analysis of GaN based device grown on silicon substrate. Based on combined experimental data and bi-dimensional numerical simulation we demonstrate that many physical mechanisms can contribute to increase the leakage current leading to the final breakdown of the device. In particular we show how band-toband phenomena, rather than impact ionization, can be responsible of the premature breakdown even in double-heterostructure HEMTs.
2014
2014 44th European Solid State Device Research Conference (ESSDERC)
2014 44th European Solid State Device Research Conference (ESSDERC)
9781479943760
9781479943784
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3146146
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