PIEROBON, ROBERTO

PIEROBON, ROBERTO  

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Risultati 1 - 20 di 32 (tempo di esecuzione: 0.051 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Method for generating an atmospheric plasma jet and atmospheric plasma minitorch device 2015 PATELLI, ALESSANDROPIEROBON, ROBERTOVEZZU', SIMONE + - - -
A new combined process based on MWCNT spray deposition and atmospheric pressure plasma jet fixing for large scale production of transparent and flexible conductive coatings 2013 PATELLI, ALESSANDROMENEGHETTI, MORENOSCHIAVUTA, PIEROPIEROBON, ROBERTO + - - Proceedings - International Symposium on Advanced Packaging Materials
Dall’evoluzione in vitro alle nanotecnologie: gli aptameri come biosensori 2012 GATTO, BARBARAPIEROBON, ROBERTO GALILEO - -
Hot Electron stress on unpassivated GaN/AlGaN/GaN HEMTs 2005 RAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOPIEROBON, ROBERTOTAMIAZZO, GIANLUCAZANONI, ENRICO + - - -
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 2005 MENEGHESSO, GAUDENZIOPIEROBON, ROBERTORAMPAZZO, FABIANATAMIAZZO, GIANLUCAZANONI, ENRICO + - - -
Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors 2005 RAMPAZZO, FABIANATAMIAZZO, GIANLUCAPIEROBON, ROBERTOMENEGHESSO, GAUDENZIO + APPLIED PHYSICS LETTERS - -
Low Current Dispersion and Low Bias-Stress Degradation of Unpassivated GaN/AlGaN/GaN/SiC HEMTs 2005 PIEROBON, ROBERTOMENEGHESSO, GAUDENZIOZANONI, ENRICO + PHYSICA STATUS SOLIDI C - -
Temperature stability of Breakdown Voltage on SiC power Schottky diodes with different barrier heights 2005 PIEROBON, ROBERTOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MATERIAL SCIENCE FORUM - -
Analysis of hot carrier aging degradation in GaN MESFETs 2004 PIEROBON, ROBERTORAMPAZZO, FABIANAPACETTA, DOMENICOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Electrical characterization of inhomogeneous Ni2Si/SiC Schottky contacts 2004 PIEROBON, ROBERTOZANONI, ENRICO + - - -
Experimental and Simulated Gate Lag Transients in Unpassivated GaN/AlGaN/GaN HEMTs 2004 PIEROBON, ROBERTORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Hot carrier aging degradation phenomena in GaN based MESFETs 2004 RAMPAZZO, FABIANAPIEROBON, ROBERTOPACETTA, DOMENICOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Reliability aspects of GaN microwave devices 2004 MENEGHESSO, GAUDENZIOPIEROBON, ROBERTORAMPAZZO, FABIANACHINI, ALESSANDROZANONI, ENRICO + - - -
Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm 2004 PIEROBON, ROBERTORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Surface Related Drain Current Dispersion Effects in AlGaN/GaN HEMTs 2004 MENEGHESSO, GAUDENZIOPIEROBON, ROBERTORAMPAZZO, FABIANAZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Temperature stability of Breakdown Voltage on SiC power Schottky diodes with different barrier heights 2004 PIEROBON, ROBERTOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Unpassivated GaN/AlGaN/GaN HEMTs with very low DC to RF drain current dispersion 2004 PIEROBON, ROBERTORAMPAZZO, FABIANACORRADINI, LUCAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Current Collapse in AlGaN/GaN HEMT's analyzed by means of 2D device simulation 2003 MENEGHESSO, GAUDENZIOPIEROBON, ROBERTORAMPAZZO, FABIANAZANONI, ENRICO + - - -
Defect diagnostics of degradation mechanisms of GaN-based LEDs after accelerated DC current ageing 2003 MENEGHESSO, GAUDENZIOLEVADA, SIMONEPIEROBON, ROBERTORAMPAZZO, FABIANAZANONI, ENRICO + - - -
Frequency transconductance and Gate-Lag dispersion in InAlAs/InGaAs/InP HEMTs 2003 MENEGHESSO, GAUDENZIORAMPAZZO, FABIANAPIEROBON, ROBERTOZANONI, ENRICO + - - -