Results related to electrical instabilities in AlGaN/GaN HEMTs will be presented. We have observed a large drain current and transconductance collapse, after the devices are biased in the dark at high VDS; end-resistance measurements and measurements with inverted source and drain confirm that trapping occurs in the gate-drain access region, giving rise to an increase in the parasitic drain series resistance.
Current Collapse in AlGaN/GaN HEMTs
CHINI, ALESSANDRO;BUTTARI, DARIO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2001
Abstract
Results related to electrical instabilities in AlGaN/GaN HEMTs will be presented. We have observed a large drain current and transconductance collapse, after the devices are biased in the dark at high VDS; end-resistance measurements and measurements with inverted source and drain confirm that trapping occurs in the gate-drain access region, giving rise to an increase in the parasitic drain series resistance.
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