ZANONI, ENRICO
 Distribuzione geografica
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Continente #
NA - Nord America 57.045
EU - Europa 8.198
AS - Asia 5.018
OC - Oceania 27
Continente sconosciuto - Info sul continente non disponibili 25
SA - Sud America 21
AF - Africa 9
Totale 70.343
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Nazione #
US - Stati Uniti d'America 56.854
CN - Cina 2.830
IT - Italia 2.098
IE - Irlanda 1.662
FI - Finlandia 1.333
SG - Singapore 1.077
DE - Germania 1.004
GB - Regno Unito 570
SE - Svezia 556
UA - Ucraina 536
VN - Vietnam 409
IN - India 212
CA - Canada 180
JP - Giappone 117
TW - Taiwan 115
KR - Corea 108
FR - Francia 97
NL - Olanda 71
HK - Hong Kong 65
RU - Federazione Russa 46
BE - Belgio 45
CH - Svizzera 34
GR - Grecia 33
AT - Austria 24
TR - Turchia 20
EU - Europa 19
RO - Romania 19
AU - Australia 17
BR - Brasile 14
ID - Indonesia 13
MX - Messico 10
NZ - Nuova Zelanda 10
PL - Polonia 10
DK - Danimarca 8
IL - Israele 8
SA - Arabia Saudita 8
BG - Bulgaria 7
ES - Italia 7
A2 - ???statistics.table.value.countryCode.A2??? 6
LT - Lituania 6
MY - Malesia 6
NO - Norvegia 6
BD - Bangladesh 5
IR - Iran 5
MD - Moldavia 5
CY - Cipro 4
HR - Croazia 4
IQ - Iraq 4
MA - Marocco 4
RS - Serbia 4
AR - Argentina 3
DZ - Algeria 3
NP - Nepal 3
CO - Colombia 2
CZ - Repubblica Ceca 2
PT - Portogallo 2
SI - Slovenia 2
TH - Thailandia 2
AF - Afghanistan, Repubblica islamica di 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
DO - Repubblica Dominicana 1
EC - Ecuador 1
EE - Estonia 1
EG - Egitto 1
HU - Ungheria 1
IM - Isola di Man 1
KE - Kenya 1
KZ - Kazakistan 1
ME - Montenegro 1
MK - Macedonia 1
MO - Macao, regione amministrativa speciale della Cina 1
OM - Oman 1
PH - Filippine 1
PY - Paraguay 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 70.343
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Città #
Fairfield 9.495
Woodbridge 7.389
Houston 5.650
Ann Arbor 4.878
Ashburn 4.159
Seattle 3.545
Wilmington 3.328
Chandler 3.304
Cambridge 3.166
Jacksonville 2.372
Dublin 1.656
Princeton 1.200
Beijing 912
Medford 875
San Diego 828
Des Moines 711
Padova 701
Singapore 591
Nanjing 545
Helsinki 520
Boardman 422
Dong Ket 403
Roxbury 258
Guangzhou 210
Leesburg 205
Munich 173
Shenyang 171
Nanchang 159
New York 159
Hebei 151
Norwalk 147
Montréal 139
London 132
Jiaxing 115
Mcallen 110
Changsha 106
Tianjin 97
Washington 83
Indiana 76
Pune 73
Redwood City 70
Shanghai 66
Jinan 53
Los Angeles 52
Milan 51
Kharkiv 49
Borås 45
Scorzè 40
Tappahannock 39
Hsinchu 36
Zhengzhou 36
Ogden 35
Tokyo 34
Mumbai 33
Kilburn 32
Lappeenranta 32
Rome 28
Central 27
Mestre 26
Turin 26
San Francisco 25
Chicago 24
Ningbo 23
Hangzhou 22
Palermo 22
Taipei 21
Chiswick 20
Frankfurt am Main 20
Hounslow 19
Pignone 18
Prescot 18
Rockville 18
Edinburgh 17
Falls Church 17
Modena 17
Phoenix 17
Arzignano 16
Berlin 15
Bologna 15
Sarcedo 15
Thessaloniki 15
Yangmei District 15
Zurich 15
Nürnberg 14
Stuttgart 14
Yellow Springs 14
Yenibosna 14
Haikou 13
Paris 13
Venice 13
Vienna 13
Amsterdam 12
Bristol 12
Delhi 12
Hwaseong-si 12
New Bedfont 12
Parma 12
Yongin-si 12
Agordo 11
Azzano Decimo 11
Totale 60.662
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Nome #
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications 507
Three terminal Breakdown evaluation in GaN-HEMT 488
Vertical GaN devices: Process and reliability 351
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 279
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 234
Semi-Transparent Perovskite Solar Cells: Performance and Perspectives 216
Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices 191
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 170
A review of failure modes and mechanisms of GaN-based HEMT's 169
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 168
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs 165
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 156
Study and development of a fluorescence based sensor system for monitoring oxygen in wine production: The WOW project 154
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 154
Analysis of DC Current Accelerated Life Tests of GaN LEDs Using a Weibull-Based Statistical Model 153
Analysis of hot carrier aging degradation in GaN MESFETs 153
Accelerated life test of high brightness light emitting diodes 153
Failure modes and mechanisms of DC-aged GaN LEDs 152
Analysis of the role of current in the degradation of InGaN-based laser diodes 148
Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes 148
2.1 A/mm current density AlGaN/GaN HEMT 148
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 147
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 147
Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes 146
Defect-related degradation of Deep-UV-LEDs 144
Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT's 143
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN light emitting diodes 143
Anomalous Kink Effect in GaN High Electron Mobility Transistors 143
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology 142
A study of Failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 142
Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements 141
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 141
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 141
A novel fast and versatile temperature measurement system for LDMOS transistors 140
Failure modes and mechanisms of InP-based and Metamorphic High Electron Mobility Transistors 140
Influence of device self-heating on trap activation energy extraction 140
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 140
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 139
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 138
ESD characterization of multi-chip RGB LEDs 138
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes 138
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes 138
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 138
A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs 138
Reliability analysis of InGaN Blu-Ray laser diode 137
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 137
Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes 134
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 134
Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting 133
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 132
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs 132
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 131
Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress 131
Reliability aspects of GaN-HEMTs on composite substrates 130
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 130
Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs 130
Adaptive multi-wavelength LED star simulator for space life studies 130
Development of kink in the output I-V characteristics of pseudomorphic HEMTs after hot-electron accelerated testing 128
Reliability issues of Gallium Nitride High Electron Mobility Transistors 128
Extensive analysis of the degradation of phosphor-converted LEDs 126
Channel temperature measurement of PHEMT by means of optical probes 126
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 126
"Hot-plugging" of LED modules: Electrical characterization and device degradation 126
Failure mechanisms of gallium nitride LEDs related with passivation 126
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 126
Thermal stability of Mo-based Schottky contact for AlGaN/GaN HEMT 125
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 125
Diagnosis of trapping phenomena in GaN MESFETs 125
Trap Characterization in Buried-Gate N-Channel 6H-SiC JFETs 125
Analysis of the Diffusion Involved in the Degradation of InGaN-Based Laser Diodes 124
A Review on the Reliability of GaN-based Laser Diodes 124
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 123
Redistribution of multi-quantum well states induced by current stress in InxGa1-xN/GaN light-emitting diodes 122
Defects in GaN-based LEDs: Impact on internal quantum efficiency and on reliability 122
Extensive analysis of the degradation of blu-ray laser diodes 120
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 120
Thermal storage effects on AlGaN/GaN HEMT 119
Low Current Dispersion and Low Bias-Stress Degradation of Unpassivated GaN/AlGaN/GaN/SiC HEMTs 119
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 119
Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: Study of walkout due to residual carbon concentration 119
Towards high reliability GaN LEDs: Understanding the physical origin of gradual and catastrophic failure 119
High-temperature degradation of GaN LEDs related to passivation 118
The role of Mg complexes in the degradation of InGaN-based LEDs 118
Analysis of the mechanisms limiting the reliability of retrofit LED lamps 118
Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs 117
Reliability of visible GaN LEDs in plastic package 117
High temperature electro-optical degradation of InGaN/GaN HBLEDs 116
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes 116
Channel thickness dependence of breakdown dynamic in InP-based lattice-matched HEMTs 116
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 116
Positive and negative threshold voltage instabilities in GaN-based transistors 116
Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress 115
Trapped Charge Modulation: A New Cause of Instability in AlGaAs/InGaAs Pseudomorphic HEMT's 115
Electroluminescence and other Diagnostic Techniques for the Study of Hot Electron Effects in Compound Semiconductor Devices 114
Characterization of GaN based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence spectroscopy 114
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 114
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 114
Analysis of the Reliability of AlGaN/GaN HEMTs Submitted to On-State Stress Based on Electroluminescence Investigation 114
Mechanisms of RF current collapse in AlGaN-GaN high electron mobility transistors 113
Correlation between hot-electron-stress-induced degradation and cathodoluminescence in InP based HEMTs 113
Totale 14.581
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Categoria #
all - tutte 246.213
article - articoli 132.730
book - libri 138
conference - conferenze 0
curatela - curatele 128
other - altro 79
patent - brevetti 313
selected - selezionate 0
volume - volumi 5.896
Totale 385.497
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202016.507 2.080 413 182 2.970 1.653 1.182 1.243 1.695 1.822 1.709 950 608
2020/20219.653 596 713 453 711 457 679 668 1.248 1.216 823 1.055 1.034
2021/202211.139 294 1.612 1.646 695 361 478 581 1.181 489 256 1.194 2.352
2022/20239.531 1.766 399 172 839 1.603 1.399 264 771 1.206 127 611 374
2023/20246.465 535 890 694 551 469 793 457 267 236 301 618 654
2024/202567 67 0 0 0 0 0 0 0 0 0 0 0
Totale 70.968