FREGOLENT, MANUEL
 Distribuzione geografica
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Continente #
EU - Europa 618
AS - Asia 484
NA - Nord America 429
SA - Sud America 5
AF - Africa 1
Totale 1.537
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Nazione #
US - Stati Uniti d'America 422
IE - Irlanda 249
IT - Italia 211
SG - Singapore 160
CN - Cina 103
JP - Giappone 66
KR - Corea 45
IN - India 41
DE - Germania 34
FR - Francia 30
GB - Regno Unito 29
TW - Taiwan 28
RU - Federazione Russa 18
HK - Hong Kong 15
AT - Austria 13
NL - Olanda 12
ID - Indonesia 9
FI - Finlandia 8
BE - Belgio 7
CA - Canada 6
BR - Brasile 5
TR - Turchia 5
CY - Cipro 4
DK - Danimarca 3
AL - Albania 2
IR - Iran 2
PK - Pakistan 2
VN - Vietnam 2
BD - Bangladesh 1
CI - Costa d'Avorio 1
LB - Libano 1
MX - Messico 1
PL - Polonia 1
SE - Svezia 1
Totale 1.537
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Città #
Dublin 249
Santa Clara 78
Padova 73
Ashburn 70
Singapore 68
Boardman 33
Beijing 27
Chandler 21
Kawasaki 17
Milan 15
Riese Pio X 15
Fairfield 12
Los Angeles 12
Bengaluru 11
Guangzhou 10
Sarcedo 10
Tokyo 10
Venice 10
Washington 10
London 9
Hong Kong 8
Helsinki 7
Hsinchu 7
Bristol 6
Cambridge 6
Daejeon 6
Dallas 6
Houston 6
Ithaca 6
Manchester 6
Shanghai 6
Grenoble 5
Nagoya 5
New Delhi 5
Verona 5
Yokohama 5
Arzignano 4
Berlin 4
Changsha 4
Daegu 4
Fossò 4
Frankfurt am Main 4
Gangnam-gu 4
Limassol 4
Modena 4
Munich 4
Newark 4
Nuremberg 4
Parma 4
Pohang 4
Selvazzano Dentro 4
Seoul 4
Taipei 4
Vienna 4
Wakayama 4
Bologna 3
Cabiate 3
Cervarese Santa Croce 3
Cislago 3
Des Moines 3
Folsom 3
Gaithersburg 3
Gurugram 3
Higashimukōjima 3
Jaipur 3
Kanpur 3
Kolkata 3
Leuven 3
Lyon 3
Medford 3
New Taipei City 3
Nice 3
Odawara 3
Ogden 3
Patna 3
Princeton 3
Pune 3
Sala Baganza 3
Sherbrooke 3
Treviso 3
Wuhan 3
Albany 2
Ankara 2
Ann Arbor 2
Arce 2
Azzano Decimo 2
Buffalo 2
Dongguan 2
Erfurt 2
Falkenstein 2
Faridabad 2
Genoa 2
Gwanak-gu 2
Gwangjin-gu 2
Gwangju 2
Hangzhou 2
Hanoi 2
Hwaseong-si 2
Istanbul 2
Kaohsiung City 2
Totale 1.047
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Nome #
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 297
Gallium Oxide and Gallium Nitride-based devices for high-power applications: characterization, reliability, and modelling 172
Trapping and Reliability Properties of Al2O3 Gate Dielectrics Obtained with Stacked ALD Deposition 98
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy 58
GaN Vertical Devices: challenges for high performance and stability 56
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation 55
Novel models for the analysis of the dynamic performance of wide bandgap devices 52
Deep Levels and Threshold Voltage Instability in Vertical a-Plane Oriented GaN MISFETs 51
Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3Schottky barrier diodes 48
Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques 47
Threshold Voltage Instability in Vertical β-Ga2O3 finFETs Investigated by Combined Electrical and Optical Techniques 43
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations 42
Review on the degradation of GaN-based lateral power transistors 39
Dynamic performance of wide bandgap devices 36
Investigation of Wafer-Level Dynamic Properties of p-GaN HEMTs in Hard Switching Conditions 34
Modeling of the Conduction Processes and Deep Levels in Annealed Nitrogen-Implanted β-Gallium Oxide Schottky diodes 34
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs 33
Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results 32
Conduction processes, modeling and deep levels in nitrogen-implanted β-Gallium oxide Schottky diodes 32
Investigation of Threshold Voltage Instability in GaN-on-Si Trench MOSFETs with SiO2 Gate Dielectric 30
Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes 30
Investigation of deep level defects in n-type GaAsBi 28
Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling 28
CONDUCTION PROPERTIES AND THRESHOLD VOLTAGE INSTABILITY IN beta-Ga2O3 MOSFETs 28
Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation 24
Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs 23
Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric 22
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 22
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors 21
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 18
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach 15
Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substrate 13
Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3 gate stack 10
Totale 1.571
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Categoria #
all - tutte 7.295
article - articoli 3.933
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 11.228
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202114 0 0 0 0 0 0 0 0 0 0 0 14
2021/202231 0 0 4 0 0 4 4 3 3 0 7 6
2022/2023223 5 0 5 3 15 11 34 26 38 11 39 36
2023/2024527 42 62 55 39 43 61 30 29 52 34 32 48
2024/2025776 26 62 98 92 142 104 80 80 87 5 0 0
Totale 1.571