FREGOLENT, MANUEL
 Distribuzione geografica
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Continente #
AS - Asia 1.581
EU - Europa 1.355
NA - Nord America 1.220
AF - Africa 376
SA - Sud America 325
OC - Oceania 26
Continente sconosciuto - Info sul continente non disponibili 21
Totale 4.904
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Nazione #
US - Stati Uniti d'America 1.022
SG - Singapore 489
IT - Italia 351
CN - Cina 282
IE - Irlanda 267
BR - Brasile 200
HK - Hong Kong 136
VN - Vietnam 111
DE - Germania 86
PL - Polonia 82
JP - Giappone 81
KR - Corea 78
FR - Francia 68
GB - Regno Unito 68
IN - India 66
BJ - Benin 48
FI - Finlandia 44
NL - Olanda 40
TW - Taiwan 38
AT - Austria 37
ID - Indonesia 32
AR - Argentina 29
RU - Federazione Russa 29
MX - Messico 26
ZA - Sudafrica 23
TR - Turchia 22
BE - Belgio 21
EC - Ecuador 21
ES - Italia 17
SE - Svezia 17
SA - Arabia Saudita 16
DK - Danimarca 15
DO - Repubblica Dominicana 15
DZ - Algeria 15
GA - Gabon 15
UZ - Uzbekistan 15
BA - Bosnia-Erzegovina 14
CH - Svizzera 14
IR - Iran 14
MY - Malesia 14
CA - Canada 13
CO - Colombia 13
MK - Macedonia 13
TJ - Tagikistan 13
UY - Uruguay 13
AZ - Azerbaigian 12
CI - Costa d'Avorio 12
KZ - Kazakistan 12
ME - Montenegro 12
PR - Porto Rico 12
RS - Serbia 12
SN - Senegal 12
TT - Trinidad e Tobago 12
AL - Albania 11
CY - Cipro 11
LV - Lettonia 11
PH - Filippine 11
PY - Paraguay 11
XK - ???statistics.table.value.countryCode.XK??? 11
AE - Emirati Arabi Uniti 10
BB - Barbados 10
BS - Bahamas 10
BW - Botswana 10
BZ - Belize 10
CD - Congo 10
CL - Cile 10
CW - ???statistics.table.value.countryCode.CW??? 10
EE - Estonia 10
EG - Egitto 10
GN - Guinea 10
GR - Grecia 10
HN - Honduras 10
IQ - Iraq 10
IS - Islanda 10
JM - Giamaica 10
MU - Mauritius 10
PA - Panama 10
SI - Slovenia 10
TN - Tunisia 10
UA - Ucraina 10
CM - Camerun 9
CV - Capo Verde 9
ET - Etiopia 9
GH - Ghana 9
GT - Guatemala 9
IL - Israele 9
JO - Giordania 9
KE - Kenya 9
MG - Madagascar 9
MN - Mongolia 9
NC - Nuova Caledonia 9
NP - Nepal 9
PK - Pakistan 9
RO - Romania 9
UG - Uganda 9
VE - Venezuela 9
ZM - Zambia 9
ZW - Zimbabwe 9
AO - Angola 8
CR - Costa Rica 8
Totale 4.593
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Città #
Dublin 259
Singapore 229
Ashburn 208
Hong Kong 121
Los Angeles 93
Beijing 90
Padova 84
Santa Clara 81
Padua 67
Bytom 60
Cotonou 47
Ho Chi Minh City 43
Munich 41
Chicago 36
Boardman 33
Hefei 30
Milan 24
New York 22
Turku 22
Chandler 21
Buffalo 19
Hanoi 19
Salt Lake City 19
Vienna 19
Redondo Beach 18
Tokyo 18
Kawasaki 17
Nuremberg 17
Warsaw 17
Seoul 16
São Paulo 16
Dallas 15
Libreville 15
Riese Pio X 15
Bristol 14
Grenoble 14
Dushanbe 13
Johannesburg 13
London 13
Dakar 12
Fairfield 12
Manchester 12
Tampa 12
Tashkent 12
Abidjan 11
Baku 11
Bengaluru 11
Guangzhou 11
Istanbul 11
Ithaca 11
Montevideo 11
Pristina 11
Venice 11
Cambridge 10
Conakry 10
Helsinki 10
Houston 10
Mexico City 10
Podgorica 10
Sarcedo 10
Washington 10
Accra 9
Amman 9
Bridgetown 9
Denver 9
Hsinchu 9
Kinshasa 9
Lusaka 9
Nairobi 9
Nassau 9
New Delhi 9
Panama City 9
Parma 9
Shanghai 9
Ulan Bator 9
Antananarivo 8
Belgrade 8
Biên Hòa 8
Brooklyn 8
Harare 8
Kampala 8
Kigali 8
Limassol 8
Luanda 8
Lyon 8
Maputo 8
Nouakchott 8
Noumea 8
Phoenix 8
Quito 8
Reykjavik 8
Riga 8
Rome 8
Santo Domingo 8
Stockholm 8
Villeurbanne 8
Willemstad 8
Zurich 8
Amsterdam 7
Brussels 7
Totale 2.481
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Nome #
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 386
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach 280
Gallium Oxide and Gallium Nitride-based devices for high-power applications: characterization, reliability, and modelling 244
Trapping and Reliability Properties of Al2O3 Gate Dielectrics Obtained with Stacked ALD Deposition 187
Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase 186
Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation 133
Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results 127
OFF-state breakdown and threshold voltage stability of vertical GaN-on-Si trench MOSFETs 126
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations 125
Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques 120
Review on the degradation of GaN-based lateral power transistors 119
Threshold Voltage Instability in Vertical β-Ga2O3 finFETs Investigated by Combined Electrical and Optical Techniques 117
GaN Vertical Devices: challenges for high performance and stability 117
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy 113
Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3Schottky barrier diodes 113
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs 110
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 109
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation 104
Investigation of Wafer-Level Dynamic Properties of p-GaN HEMTs in Hard Switching Conditions 103
Novel models for the analysis of the dynamic performance of wide bandgap devices 102
Self-Induced Photoionization of Traps in Buffer-Free AlGaN/GaN HEMTs 96
Deep Levels and Threshold Voltage Instability in Vertical a-Plane Oriented GaN MISFETs 92
Investigation of Threshold Voltage Instability in GaN-on-Si Trench MOSFETs with SiO2 Gate Dielectric 90
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors 88
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 87
Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric 86
Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes 84
CONDUCTION PROPERTIES AND THRESHOLD VOLTAGE INSTABILITY IN beta-Ga2O3 MOSFETs 84
Investigation of deep level defects in n-type GaAsBi 83
Dynamic performance of wide bandgap devices 82
Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substrate 80
Experimental Demonstration of Avalanche operation in lateral normally-off 100 V GaN HEMTs 78
Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling 75
Systematic analysis of the trapping and reliability of Al2O3/GaN MOS capacitors with different atomic layer deposition techniques 73
Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC 69
Conduction processes, modeling and deep levels in nitrogen-implanted β-Gallium oxide Schottky diodes 68
Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3 gate stack 66
Modeling of the Conduction Processes and Deep Levels in Annealed Nitrogen-Implanted β-Gallium Oxide Schottky diodes 65
Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs 64
Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications 63
Identification of Boron-related traps via Capacitance Spectroscopy in Diamond Schottky diodes 63
Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate 60
Development of p-channel GaN FETs on extremely-low doped p-GaN with Mg-diffused Ohmic contacts 52
Study of trapping mechanisms affecting AlGaN/GaN HEMTs adopting AlGaN back-barriers with different aluminum concentrations 47
Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs 43
Enhanced Gate Reliability of p-GaN/AlGaN/GaN HEMTs Due to Gate Hole Injection and Recombination 34
Modeling of the gate leakage and forward gate reliability in Schottky-gate p-GaN HEMTs 30
Gate leakage modeling and reliability in forward gate bias of p-GaN HEMTs with Schottky-gate 25
GaN Devices: Technology, Reliability-Limiting Processes and ESD Failures 11
Totale 4.959
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Categoria #
all - tutte 13.197
article - articoli 6.864
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 20.061
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202114 0 0 0 0 0 0 0 0 0 0 0 14
2021/202231 0 0 4 0 0 4 4 3 3 0 7 6
2022/2023223 5 0 5 3 15 11 34 26 38 11 39 36
2023/2024527 42 62 55 39 43 61 30 29 52 34 32 48
2024/20251.294 26 62 98 92 142 104 80 80 87 56 177 290
2025/20262.870 267 311 763 898 630 1 0 0 0 0 0 0
Totale 4.959