PIVA, FRANCESCO

PIVA, FRANCESCO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 24 (tempo di esecuzione: 0.049 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results 2024 Fregolent, ManuelPiva, FrancescoBuffolo, MatteoSanti, Carlo DeCester, AndreaMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Fast Characterization of Power LEDs: Circuit Design and Experimental Results 2024 Roccato, NicolaPiva, FrancescoBuffolo, MatteoTrivellin, NicolaDe Santi, CarloNarduzzi, ClaudioFraccaroli, RiccardoCaria, AlessandroMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs 2024 Roccato, NicolaPiva, FrancescoBuffolo, MatteoSanti, Carlo DeTrivellin, NicolaMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Investigation of degradation dynamics of 265 nm LEDs assisted by EL measurements and numerical simulations 2024 Piva, FrancescoBuffolo, MatteoRoccato, NicolaPilati, MarcoLongato, SimoneSanti, Carlo DeMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + SEMICONDUCTOR SCIENCE AND TECHNOLOGY - -
Modeling of the electrical characteristics and degradation mechanisms of UV-C LEDs 2024 Roccato, NicolaPiva, FrancescoDe Santi, CarloBuffolo, MatteoMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + IEEE PHOTONICS JOURNAL - -
Bias-dependent degradation of single quantum well on InGaN-based light emitting diode 2023 Casu, C.Buffolo, M.Caria, A.Piva, F.De Santi, C.Meneghesso, G.Zanoni, E.Meneghini, M. MICROELECTRONICS RELIABILITY - -
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations 2023 Piva F.Pilati M.Buffolo M.Roccato N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs 2023 Piva F.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations 2023 Roccato N.Piva F.De Santi C.Buffolo M.Fregolent M.Pilati M.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
Performance and Degradation of Commercial Ultraviolet-C Light-Emitting Diodes for Disinfection Purposes 2023 Trivellin, NPiva, FBuffolo, MDe Santi, CZanoni, EMeneghesso, GMeneghini, M + PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
Status of Performance and Reliability of 265 nm Commercial UV-C LEDs in 2023 2023 Piva, FrancescoBuffolo, MatteoSanti, Carlo DeMeneghesso, GaudenzioZanoni, EnricoMeneghini, MatteoTrivellin, Nicola IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Defects and Reliability of GaN-Based LEDs: Review and Perspectives 2022 Buffolo M.Caria A.Piva F.Roccato N.Casu C.De Santi C.Trivellin N.Meneghesso G.Zanoni E.Meneghini M. PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress 2022 Roccato, NPiva, FDe Santi, CBuffolo, MMeneghesso, GZanoni, EMeneghini, M + MICROELECTRONICS RELIABILITY - -
Reliability of Commercial UVC LEDs: 2022 State-of-the-Art 2022 Trivellin N.Fiorimonte D.Piva F.Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. ELECTRONICS - -
Defect incorporation in In-containing layers and quantum wells: Experimental analysis via deep level profiling and optical spectroscopy 2021 Piva F.De Santi C.Caria A.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer 2021 Roccato N.Piva F.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics 2021 Roccato N.Piva F.Santi C. D.Mukherjee K.Buffolo M.Verzellesi G.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Review on the degradation of GaN-based lateral power transistors 2021 De Santi, C.Buffolo, M.Caria, A.Chiocchetta, F.Favero, D.Fregolent, M.Masin, F.Modolo, N.Nardo, A.Piva, F.Rampazzo, F.Trivellin, N.Gao, Z.Meneghini, M.Zanoni, E.Meneghesso, G. + E-PRIME, ADVANCES IN ELECTRICAL ENGINEERING, ELECTRONICS AND ENERGY - -
Uv-based technologies for sars-cov2 inactivation: Status and perspectives 2021 Trivellin N.Piva F.Fiorimonte D.Buffolo M.De Santi C.Dughiero F.Meneghesso G.Zanoni E.Meneghini M. + ELECTRONICS - -
Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements 2020 Piva F.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -