BORGA, MATTEO
BORGA, MATTEO
Università di Padova
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
2020 Mukherjee, K.; Borga, M.; Ruzzarin, M.; De Santi, C.; Stoffels, S.; You, S.; Geens, K.; Liang, H.; Decoutere, S.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment
2019 Borga, M.; Meneghini, M.; Benazzi, D.; Canato, E.; Pusche, R.; Derluyn, J.; Abid, I.; Medjdoub, F.; Meneghesso, G.; Zanoni, E.
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
2022 Modolo, N.; Fregolent, M.; Masin, F.; Benato, A.; Bettini, A.; Buffolo, M.; De Santi, C.; Borga, M.; Posthuma, N.; Bakeroot, B.; Decoutere, S.; Vogrig, D.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process
2018 Stoffels, S.; Geens, K.; Li, X.; Wellekens, D.; You, S.; Zhao, M.; Borga, M.; Zanoni, E.; Meneghesso, G.; Meneghini, M.; Posthuma, N. E.; Van Hove, M.; Decoutere, S.
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs
2017 Borga, Matteo; Meneghini, Matteo; Rossetto, Isabella; Stoffels, Steve; Posthuma, Niels; Van Hove, Marleen; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs
2019 Fabris, Elena; Meneghini, Matteo; De Santi, Carlo; Borga, Matteo; Kinoshita, Yusuke; Tanaka, Kenichiro; Ishida, Hidetoshi; Ueda, Tetsuzo; Meneghesso, Gaudenzio; Zanoni, Enrico
Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs
2018 Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Li, Xiangdong; Posthuma, Niels; Van Hove, Marleen; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs
2018 Borga, M.; Meneghini, M.; Stoffels, S.; Van Hove, M.; Zhao, M.; Li, X.; Decoutere, S.; Zanoni, E.; Meneghesso, G.
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
2020 Borga, M.; Mukherjee, K.; De Santi, C.; Stoffels, S.; Geens, K.; You, S.; Bakeroot, B.; Decoutere, S.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications
2020 Borga, Matteo; DE SANTI, Carlo; Stoffels, S.; Bakeroot, Benoit; Li, Xiangdong; Zhao, M.; Vanhove, M.; Decoutere, S.; Meneghesso, Gaudenzio; Meneghini, Matteo; Zanoni, Enrico
The 2018 GaN power electronics roadmap
2018 Amano, Hiroshi; Baines, Y.; Beam, E.; Borga, Matteo; Bouchet, T.; Chalker, Paul R; Geurts, CHARLES - MICHEL LOUIS - MARIE GHISLAIN; Chen, Kevin J; Chowdhury, Nadim; Chu, Rongming; De Santi, Carlo; De Souza, Maria Merlyne; Decoutere, Stefaan; Di Cioccio, L.; Eckardt, Bernd; Egawa, Takashi; Fay, P.; Freedsman, Joseph J; Guido, L.; Häberlen, Oliver; Haynes, Geoff; Heckel, Thomas; Hemakumara, Dilini; Houston, Peter; Hu, Jie; Hua, Mengyuan; Huang, Qingyun; Huang, Alex; Jiang, Sheng; Kawai, H.; Kinzer, Dan; Kuball, Martin; Kumar, Ashwani; Lee, Kean Boon; Li, Xu; Marcon, Denis; März, Martin; Mccarthy, R.; Meneghesso, Gaudenzio; Meneghini, Matteo; Morvan, E.; Nakajima, A.; Narayanan, E. M. S.; Oliver, Stephen; Palacios, Tomás; Piedra, Daniel; Plissonnier, M.; Reddy, R.; Sun, Min; Thayne, Iain; Torres, A.; Trivellin, Nicola; Unni, V.; Uren, Michael J; Van Hove, Marleen; Wallis, David J; Wang, J.; Xie, J.; Yagi, S.; Yang, Shu; Youtsey, C.; Yu, Ruiyang; Zanoni, Enrico; Zeltner, Stefan; Zhang, Yuhao
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment
2020 Tajalli, A.; Borga, M.; Meneghini, M.; Santi, C. D.; Benazzi, D.; Besendorfer, S.; Pusche, R.; Derluyn, J.; Degroote, S.; Germain, M.; Kabouche, R.; Abid, I.; Meissner, E.; Zanoni, E.; Medjdoub, F.; Meneghesso, G.