TAZZOLI, AUGUSTO
 Distribuzione geografica
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Continente #
NA - Nord America 11.618
AS - Asia 4.294
EU - Europa 1.841
AF - Africa 628
SA - Sud America 577
OC - Oceania 59
Continente sconosciuto - Info sul continente non disponibili 36
Totale 19.053
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Nazione #
US - Stati Uniti d'America 11.125
SG - Singapore 1.410
CN - Cina 783
VN - Vietnam 640
HK - Hong Kong 432
BR - Brasile 320
DE - Germania 283
PL - Polonia 189
CA - Canada 184
FI - Finlandia 175
IN - India 156
GB - Regno Unito 148
FR - Francia 143
UA - Ucraina 138
IT - Italia 129
RU - Federazione Russa 79
BD - Bangladesh 75
IQ - Iraq 75
SE - Svezia 70
AR - Argentina 64
TR - Turchia 55
NL - Olanda 53
JP - Giappone 49
PK - Pakistan 47
PH - Filippine 45
MX - Messico 41
ZA - Sudafrica 40
ID - Indonesia 37
SA - Arabia Saudita 36
ES - Italia 33
KR - Corea 31
UY - Uruguay 31
CO - Colombia 30
IE - Irlanda 29
VE - Venezuela 26
BE - Belgio 25
TW - Taiwan 24
PA - Panama 23
UZ - Uzbekistan 23
AL - Albania 22
EE - Estonia 22
PY - Paraguay 22
YT - Mayotte 22
BY - Bielorussia 21
CG - Congo 21
EC - Ecuador 21
EG - Egitto 21
ET - Etiopia 21
RW - Ruanda 21
AO - Angola 20
AT - Austria 20
CV - Capo Verde 20
DO - Repubblica Dominicana 20
KG - Kirghizistan 20
LA - Repubblica Popolare Democratica del Laos 20
MA - Marocco 20
NP - Nepal 20
TH - Thailandia 20
AE - Emirati Arabi Uniti 19
BJ - Benin 19
DZ - Algeria 19
HN - Honduras 19
LB - Libano 19
MK - Macedonia 19
MY - Malesia 19
TN - Tunisia 19
TT - Trinidad e Tobago 19
AZ - Azerbaigian 18
CM - Camerun 18
CW - ???statistics.table.value.countryCode.CW??? 18
CY - Cipro 18
IL - Israele 18
IR - Iran 18
JM - Giamaica 18
PS - Palestinian Territory 18
AU - Australia 17
CR - Costa Rica 17
GA - Gabon 17
GH - Ghana 17
JO - Giordania 17
KH - Cambogia 17
MU - Mauritius 17
TZ - Tanzania 17
XK - ???statistics.table.value.countryCode.XK??? 17
BB - Barbados 16
BO - Bolivia 16
GF - Guiana Francese 16
GN - Guinea 16
GT - Guatemala 16
MD - Moldavia 16
RO - Romania 16
RS - Serbia 16
YE - Yemen 16
CL - Cile 15
CU - Cuba 15
GR - Grecia 15
IS - Islanda 15
KZ - Kazakistan 15
LU - Lussemburgo 15
LY - Libia 15
Totale 18.407
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Città #
Ashburn 867
Singapore 847
San Jose 831
Fairfield 807
Woodbridge 684
Jacksonville 667
Houston 603
Ann Arbor 594
Hong Kong 407
Wilmington 329
Chandler 323
Seattle 322
Santa Clara 296
Cambridge 227
Bytom 166
Beijing 155
Ho Chi Minh City 152
Munich 147
Boardman 141
Montréal 139
Dong Ket 132
Hanoi 132
Princeton 120
Mcallen 110
Los Angeles 94
Roxbury 94
Nanjing 84
Lauterbourg 76
Medford 73
Helsinki 71
San Diego 66
New York 53
Bengaluru 41
Des Moines 40
Baghdad 36
São Paulo 31
Tokyo 27
Chicago 24
Da Nang 23
Dallas 23
Montevideo 23
Panama City 22
Shenyang 22
Kigali 21
Norwalk 21
Dublin 20
Frankfurt am Main 20
Guangzhou 20
Nanchang 20
Hebei 19
Jiaxing 19
Tashkent 19
Addis Ababa 18
Luanda 18
Praia 18
Tallinn 18
Bishkek 17
Cotonou 17
Libreville 17
Montreal 17
Phnom Penh 17
Vienna 17
Vientiane 17
Accra 16
Baku 16
Changsha 16
Haiphong 16
Johannesburg 16
Cayenne 15
Conakry 15
Istanbul 15
Kingston 15
Lahore 15
London 15
San José 15
Tirana 15
Biên Hòa 14
Bridgetown 14
Dakar 14
Dar es Salaam 14
Managua 14
Redwood City 14
Skopje 14
Willemstad 14
Abidjan 13
Amman 13
Ankara 13
Brooklyn 13
Brussels 13
Cairo 13
Indiana 13
Mamoudzou 13
Nassau 13
Padova 13
Antananarivo 12
Bangkok 12
Dushanbe 12
Jeddah 12
Lusaka 12
Minsk 12
Totale 11.005
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Nome #
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 1.695
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 801
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures 745
Three terminal Breakdown evaluation in GaN-HEMT 587
Accelerated testing of RF-MEMS contact degradation through radiation sources 328
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs 285
A review of failure modes and mechanisms of GaN-based HEMT's 262
A study of Failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 250
Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields 249
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 244
A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs 244
Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications 242
ESD sensitivity of a GaAs MMIC microwave power amplifier 235
Reliability aspects of GaN-HEMTs on composite substrates 233
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives 226
A novel fast and versatile temperature measurement system for LDMOS transistors 225
Development of a New High Holding Voltage SCR-based ESD Protection Structure 225
Reliability issues of Gallium Nitride High Electron Mobility Transistors 223
Experimental Investigation on the Exploitation of an Active Mechanism to Restore the Operability of Malfunctioning RF-MEMS Switches 222
Thermal storage effects on AlGaN/GaN HEMT 221
K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability 214
Light, Bias, And Temperature Effects On Organic TFTs 205
A comprehensive study of MEMS behavior under EOS/ESD events: Breakdown characterization, dielectric charging, and realistic cures 204
Holding voltage investigation of advanced SCR-based protection structures for CMOS technology 198
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 197
Evolution of Electrical Parameters of Dielectric-less Ohmic RF-MEMS Switches during Continuous Actuation Stress 193
Reliability issues in RF-MEMS switches submitted to cycling and ESD test 191
Electrostatic discharge effects in ultrathin gate oxide MOSFETs 190
Electrostatic Discharge and Cycling effects on Ohmic and capacitive RF-MEMS Switches 189
Improved Reliability of Organic Light-Emitting Diodes with Indium-Zinc-Oxide Anode Contact 188
Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism 180
Acceleration of Microwelding on Ohmic RF-MEMS Switches 175
ESD induced damage on ultra-thin gate oxide MOSFETs and its impact on device reliability 175
Time-To-Latch-Up investigation of SCR devices as ESD protection structures on 65 nm technology platform 171
Reliability Issues in GaN HEMTs related to traps and gate leakage current 170
Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach 170
An active heat-based restoring mechanism for improving the reliability of RF-MEMS switches 169
Light emission in GaN HEMTs: a powerful characterization and reliability tool 169
Transmission line pulse (TLP) testing of radio frequency (RF) micro-machined micro-electromechanical systems (MEMS) switches 167
ESD Robustness of AlGaN/GaN HEMT Devices 167
Study of the actuation speed, bounces occurrences, and contact reliability of ohmic RF-MEMS switches 166
High power performances of GaN HEMT on SopSiC substrate 165
Design and Characterization of an Active Recovering Mechanism for High Performance RF MEMS Redundancy Switches 162
Soft and Hard Failures of InGaN-Based LEDs Submitted to Electrostatic Discharge Testing 161
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 160
Suspensions Shape Impact on the Reliability of RF-MEMS Redundancy Switches 159
Degradation of GaN HEMT at high drain voltages 159
New reliability understanding on GaN-HEMTs 159
Electrostatic Discharge Effects In Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques 155
Failure mechanisms of GaN-based transistors in on- and off-state 155
Factors limiting the High Brightness InGaN LEDs performance at high injection current bias 154
Threshold Voltage Instability in Organic TFT with SiO2 and SiO2/Parylene-Stack Dielectrics 154
Analysis of triggering behavior of low voltage BCD single and multi-finger gc-NMOS ESD protection devices 154
Stiction Induced by Dielectric Breakdown on rf-MEMS Switches 152
Organic TFT with SiO2-Parylene Gate Dielectric Stack and Optimized Pentacene Growth Temperature 152
GaN Hemt Degradation induced by Reverse Gate Bias Stress 151
Passivation degradation induced by thermal storage on AlGaN/GaN HEMTs 150
A Comprehensive Study of MEMS Behavior under EOS/ESD Events: Breakdown, Dielectric Charging, and Realistic Cures 149
Breakdown characterization of gate oxides in 35 and 70 angstrom BCD8 smart power technology 148
Impact of Continuous Actuation on the Reliability of Dielectric-less Ohmic RF-MEMS Switches 146
Active Recovering Mechanism for High Performance RF MEMS Redundancy Switches 146
Development of ESD protection structures for BULK and SOI BCD6 technology 143
Novel 190V LIGBT-based ESD protection for 0.35μm Smart Power technology realized on SOI substrate 143
Traps characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques 143
Characterization Issues and ESD Sensitivity of RF-MEMS Switches 142
Impact of Trapped Charge and Interface Defects on the Degradation of the Optical and Electrical Characteristics in NPD/Alq3 OLEDs 142
EOS/ESD Sensitivity of Phase-Change-Memories 140
Resistive RF-MEMS Switches Characterization and Reliability 140
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide 140
Charge Trapping in Organic Thin Film Transistors 136
Evidence of protons induced contact degradation on ohmic RF-MEMS switches 135
EOS/ESD Sensitivity of Functional rf-MEMS Switches 134
Experimental Investigation of an Embedded Heating Mechanism to Improve RF-MEMS Switches Reliability 133
Electro-Mechanical Characterization of the Dynamic Behavior of Ohmic RF MEMS Switches 131
High Voltage Electrical Characterization of Field-Plate Gate HEMT Devices 131
Modeling and characterization of a circular-shaped energy scavenger in MEMS surface micromachining technology 131
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 129
Design of mm-wave 5-bit phase shifters for Phased Array Antennas 124
CDM circuit simulation of a HV Operational Amplifier realized in 0.35μm Smart Power technology 124
A Positive Exploitation of ESD Events: Micro-welding Induction on Ohmic MEMS Contacts 123
Reliability Issues of GaN-Based High Electron Mobility Transistors 121
Characterization Issues and Charge Trapping Effects on RF-MEMS switches 120
Trap related instabilities and localized damages induced by reverse bias” 119
Design of mm-wave 5-bit phase shifters for Satellite On The Move terminals 119
Indium Zinc Oxide as an alternative to Indium Tin Oxide in OLEDs Technology 117
Parasitic Effects in GaN HEMTs and Related Characterization Methods 116
Reliability of RF-MEMS 115
Breakdown Investigation on AlGaN/GaN-HEMT Devices 115
RF-MEMS Switches Reliability for Long Term Spatial Applications 115
Long Term Actuation Issues of Ohmic RF-MEMS Switches 114
Influence of Geometrical Parameters on Time-to-Latch-Up of SCR-Based ESD Protection Structures 114
Reliability of RF-MEMS for high frequency applications 114
Electrostatic discharge sensitivity in InGaN-based Light Emitting Diodes 113
Reverse-bias and ESD instabilities of InGaN-based LEDs 110
New Issues on Characterization and Reliability of MEMS Switches 106
Reverse gate bias stress induced degradation of GaN HEMT 97
Totale 19.070
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Categoria #
all - tutte 46.764
article - articoli 13.920
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 60.684
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021174 0 0 0 0 0 0 0 0 0 0 0 174
2021/2022955 22 165 126 55 13 43 37 87 24 10 146 227
2022/2023829 159 13 3 97 142 150 0 87 105 1 50 22
2023/2024390 22 52 36 23 18 80 34 18 5 11 52 39
2024/20254.780 2.592 317 56 96 372 112 55 128 112 81 391 468
2025/20266.918 161 606 924 975 837 270 863 823 735 450 274 0
Totale 19.070