The sensitivity to EOS/ESD events of stand-alone Ge2Sb2Te5 (GST) alloy structures, heart of phase change memories, is here investigated. Analytical storage elements were tested from 3 ns up to 1 ms TLP regimes, studying the impact of both GST and heater widths on the device robustness, and reliability. It is also demonstrated that ESD phenomena can induce the reset of the memory content whether not properly protected. Finally, the correlation between TLP and MM testing is proposed.
EOS/ESD Sensitivity of Phase-Change-Memories
TAZZOLI, AUGUSTO;GASPERIN, ALBERTO;PACCAGNELLA, ALESSANDRO;MENEGHESSO, GAUDENZIO
2009
Abstract
The sensitivity to EOS/ESD events of stand-alone Ge2Sb2Te5 (GST) alloy structures, heart of phase change memories, is here investigated. Analytical storage elements were tested from 3 ns up to 1 ms TLP regimes, studying the impact of both GST and heater widths on the device robustness, and reliability. It is also demonstrated that ESD phenomena can induce the reset of the memory content whether not properly protected. Finally, the correlation between TLP and MM testing is proposed.
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