A novel ESD protection implementation based on LIGBT component is presented for 0.35 mum Smart Power HV devices on SOI substrate. A Single Stage LIGBT was designed, characterized and simulated. SOA boundaries are investigated in TLP regime. ESD performances improvements achieved using LIGBT devices are highlighted and a comparison with NDRIFTMOS-based active clamps is presented.
Novel 190V LIGBT-based ESD protection for 0.35μm Smart Power technology realized on SOI substrate
TAZZOLI, AUGUSTO;MENEGHESSO, GAUDENZIO
2008
Abstract
A novel ESD protection implementation based on LIGBT component is presented for 0.35 mum Smart Power HV devices on SOI substrate. A Single Stage LIGBT was designed, characterized and simulated. SOA boundaries are investigated in TLP regime. ESD performances improvements achieved using LIGBT devices are highlighted and a comparison with NDRIFTMOS-based active clamps is presented.
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