We present new results on electrostatic discharge on SOI MOSFETs irradiated with heavy-ion. Irradiation produces a reduction of ESD breakdown voltage and an enhanced probability of generating source-drain low-resistance filaments, even after ESD stress to the gate terminal, which is never observed in unirradiated devices.
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide
GERARDIN, SIMONE;GRIFFONI, ALESSIO;TAZZOLI, AUGUSTO;CESTER, ANDREA;MENEGHESSO, GAUDENZIO;PACCAGNELLA, ALESSANDRO
2007
Abstract
We present new results on electrostatic discharge on SOI MOSFETs irradiated with heavy-ion. Irradiation produces a reduction of ESD breakdown voltage and an enhanced probability of generating source-drain low-resistance filaments, even after ESD stress to the gate terminal, which is never observed in unirradiated devices.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
