CANATO, ELEONORA
CANATO, ELEONORA
Università di Padova
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment
2019 Borga, M.; Meneghini, M.; Benazzi, D.; Canato, E.; Pusche, R.; Derluyn, J.; Abid, I.; Medjdoub, F.; Meneghesso, G.; Zanoni, E.
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping
2019 Canato, E.; Meneghini, M.; Nardo, A.; Masin, F.; Barbato, A.; Barbato, M.; Stockman, A.; Banerjee, A.; Moens, P.; Zanoni, E.; Meneghesso, G.
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level
2017 Rossetto, I.; Meneghini, M.; Canato, E.; Barbato, M.; Stoffels, S.; Posthuma, N.; Decoutere, S.; Tallarico, A. N.; Meneghesso, G.; Zanoni, E.
GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal
2021 Abid, I.; Canato, E.; Meneghini, M.; Meneghesso, G.; Cheng, K.; Medjdoub, F.
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors
2018 Tajalli, A.; Canato, E.; Nardo, Arianna; Meneghini, M.; Stockman, A.; Moens, P.; Zanoni, E.; Meneghesso, G.
OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution
2020 Canato, E.; Meneghini, M.; De Santi, C.; Masin, F.; Stockman, A.; Moens, P.; Zanoni, E.; Meneghesso, G.
Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress
2019 Masin, Fabrizio; Meneghini, M.; Canato, E.; De Santi, C.; Stockman, A.; Zanoni, E.; Moens, P.; Meneghesso, G.
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
2021 Stockman, A.; Canato, E.; Meneghini, M.; Meneghesso, G.; Moens, P.; Bakeroot, B.