CARIA, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 3.161
AS - Asia 3.071
EU - Europa 2.135
AF - Africa 673
SA - Sud America 539
OC - Oceania 70
Continente sconosciuto - Info sul continente non disponibili 34
Totale 9.683
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Nazione #
US - Stati Uniti d'America 2.821
SG - Singapore 1.093
IT - Italia 690
CN - Cina 544
HK - Hong Kong 332
BR - Brasile 311
VN - Vietnam 213
PL - Polonia 186
DE - Germania 159
FI - Finlandia 95
FR - Francia 91
JP - Giappone 89
KR - Corea 81
IN - India 78
NL - Olanda 77
GB - Regno Unito 74
RU - Federazione Russa 65
AT - Austria 58
SE - Svezia 52
TW - Taiwan 51
MX - Messico 47
TR - Turchia 45
ES - Italia 44
CH - Svizzera 39
GR - Grecia 39
AR - Argentina 38
BE - Belgio 31
MA - Marocco 31
CA - Canada 30
BD - Bangladesh 29
BJ - Benin 29
CI - Costa d'Avorio 27
IQ - Iraq 27
MZ - Mozambico 27
UA - Ucraina 27
ZA - Sudafrica 27
AO - Angola 26
CV - Capo Verde 26
EC - Ecuador 25
ID - Indonesia 25
IE - Irlanda 25
LA - Repubblica Popolare Democratica del Laos 24
SA - Arabia Saudita 24
UY - Uruguay 24
VE - Venezuela 24
PH - Filippine 23
DK - Danimarca 22
HR - Croazia 22
HU - Ungheria 22
IL - Israele 22
MD - Moldavia 22
MK - Macedonia 22
NP - Nepal 22
PE - Perù 22
BB - Barbados 21
CW - ???statistics.table.value.countryCode.CW??? 21
KH - Cambogia 21
LY - Libia 21
NI - Nicaragua 21
SK - Slovacchia (Repubblica Slovacca) 21
UZ - Uzbekistan 21
AF - Afghanistan, Repubblica islamica di 20
GF - Guiana Francese 20
NC - Nuova Caledonia 20
PK - Pakistan 20
RS - Serbia 20
SN - Senegal 20
AL - Albania 19
BO - Bolivia 19
CO - Colombia 19
CY - Cipro 19
DZ - Algeria 19
GA - Gabon 19
IR - Iran 19
PA - Panama 19
AM - Armenia 18
BZ - Belize 18
CL - Cile 18
CZ - Repubblica Ceca 18
EG - Egitto 18
KE - Kenya 18
KG - Kirghizistan 18
MW - Malawi 18
PY - Paraguay 18
TJ - Tagikistan 18
AE - Emirati Arabi Uniti 17
AZ - Azerbaigian 17
GM - Gambi 17
MG - Madagascar 17
MN - Mongolia 17
PR - Porto Rico 17
AU - Australia 16
BA - Bosnia-Erzegovina 16
BG - Bulgaria 16
BS - Bahamas 16
GT - Guatemala 16
IS - Islanda 16
ML - Mali 16
NZ - Nuova Zelanda 16
PS - Palestinian Territory 16
Totale 8.964
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Città #
Singapore 577
Ashburn 483
Hong Kong 286
Beijing 202
Santa Clara 201
Padova 193
Fairfield 192
Bytom 145
San Jose 136
Los Angeles 112
Chandler 95
Boardman 90
Ho Chi Minh City 87
Houston 83
Chicago 74
Seattle 72
Cambridge 71
Munich 68
Woodbridge 59
New York 56
Hefei 51
Ann Arbor 48
Riese Pio X 48
Padua 43
Turku 41
Hanoi 39
Scorzè 39
Wilmington 39
São Paulo 38
Tokyo 35
Salt Lake City 32
Cotonou 29
Rome 29
Buffalo 28
San Diego 28
Helsinki 27
Medford 26
Princeton 26
Seoul 25
Abidjan 24
Denver 24
Maputo 24
Warsaw 24
Atlanta 23
Nuremberg 23
Orem 23
Milan 22
Praia 22
Vienna 22
Managua 21
Stockholm 21
Ankara 20
Brooklyn 20
Cagliari 20
Dakar 20
Luanda 20
Montevideo 20
Noumea 20
Phnom Penh 20
Shanghai 20
Boston 19
Mexico City 19
Tripoli 19
Vientiane 19
Libreville 18
Palermo 18
Tashkent 18
Thessaloniki 18
Zurich 18
Bridgetown 17
Dublin 17
Lappeenranta 17
Phoenix 17
Poplar 17
Redondo Beach 17
Ulan Bator 17
Willemstad 17
Baku 16
Bamako 16
Bishkek 16
Cayenne 16
Dushanbe 16
Haiphong 16
Montreal 16
Nassau 16
Dallas 15
Des Moines 15
Lima 15
London 15
Panama City 15
Antananarivo 14
Central 14
Chennai 14
Johannesburg 14
Kampala 14
Kigali 14
Limassol 14
Lusaka 14
New Delhi 14
Taipei 14
Totale 5.051
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Nome #
Semi-Transparent Perovskite Solar Cells: Performance and Perspectives 387
Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stress 257
GaN-based InGaN/GaN MQWs solar cells for innovative applications: performance and modeling 233
Characterization and C-DLTS analysis of antimony selenide solar cells 184
GaN-based laser wireless power transfer system 172
Defect incorporation in In-containing layers and quantum wells: Experimental analysis via deep level profiling and optical spectroscopy 171
Challenges for highly reliable GaN-based LEDs 166
Degradation processes and origin in InGaN-based high-power photodetectors 165
Fast Characterization of Power LEDs: Circuit Design and Experimental Results 157
Recoverable degradation of FAPbBr3 perovskite solar cells under reverse-bias: A combined electro-optical investigation 156
Breakdown Walkout in Polarization-Doped Vertical GaN Diodes 150
Degradation Mechanisms in High-Power LEDs: Thermal Analysis of Failure Modes 149
Solid State Lighting Systems for horticulture: Impact of LED degradation on light spectrum and intensity 149
Dependence of degradation on InGaN quantum well position: A study based on color coded structures 145
Defects and Reliability of GaN-Based LEDs: Review and Perspectives 144
Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact 142
Changes in the extraction and collection efficiency of GaN-based MQW solar cells under optical step-stress 135
Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction 135
Evidence of optically induced degradation in gallium nitride optoelectronic devices 134
Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process 131
GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress 131
V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis 131
Quality Assessment of Perovskite Solar Cells: An Industrial Point of View 130
Review on the degradation of GaN-based lateral power transistors 129
Robustness and reliability of high-power white LEDs under high-temperature, high-current stress 127
Influence of V-pits on the electro-optical properties of high-periodicity InGaN MQWs 127
Hail Damage Investigation in Heterojunction Silicon Photovoltaic Modules: A Real-World Case Study 126
InGaN/GaN Multiple Quantum Wells solar cells: a trade-off in p-GaN thickness, to optimize reliability and quantum efficiency 125
Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition 122
Semitransparent Perovskite Solar Cells for Si Tandem and Agrivoltaic Integration 120
Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells 117
Long-term (8000 h) reliability and failures of high-power LEDs for outdoor lighting stressed at high ambient temperatures 117
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics 117
III-N optoelectronics: defects, reliability and challenges 114
Excitation intensity and temperature-dependent performance of ingan/gan multiple quantum wells photodetectors 113
GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405 nm optical stress 110
Catastrophic degradation of LEDs: failure analysis and perspective 110
Avalanche capability and recoverable breakdown walkout in polarization-doped vertical GaN pn diodes 109
Degradation of InGaN-based MQW solar cells under 405 nm laser excitation 109
Trapping and Detrapping Mechanisms in β-GaO Vertical FinFETs Investigated by Electro-Optical Measurements 106
TCAD Modeling and Simulation of Dark Current-Voltage Characteristics in High-Periodicity InGaN/GaN Multiple-Quantum-Wells (MQWs) Solar Cells 104
Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode 103
ANALYSIS OF REVERSE-BIAS STABILITY OF FAPbBr3 SEMI-TRANSPARENT PEROVSKITE SOLAR CELLS 102
Undestanding commercial UVC LEDs reliability to boost disinfection efficacy 102
Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode 102
Injection-limited efficiency of InGaN LEDs and impact on electro-optical performance and ageing: a case study 101
Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance 99
Early failure of high-power white LEDs for outdoor applications under extreme electrical stress: Role of silicone encapsulant 99
Reverse-bias degradation and recovery in semi-transparent FAPbBr3 perovskite solar cells 98
Quantum efficiency of InGaN-GaN multi-quantum well solar cells: Experimental characterization and modeling 98
Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation 98
Semi-transparent FAPbBr3 perovskite solar cells: reverse-bias degradation and recovery 97
Degradation of GaN-based InGaN-GaN MQWs solar cells caused by Thermally-Activated Diffusion 97
Modeling the effect of spatial position and concentration of defects on optical degradation of InGaN/GaN multi quantum well light emitting diodes 96
Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices 95
Hotspot analysis on a flexible PV mini-modules based on IBC solar cells 93
Degradation of InGaN-based optoelectronic devices under electrical and optical stress 93
Trapping processes and band discontinuities in Ga2O3FinFETs investigated by dynamic characterization and optically-assisted measurements 93
Characterization and Modeling of quantum efficiency InGaN-GaN Multi-Quantum Well (MQW) solar cells 92
Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells 92
Photon-driven degradation processes in GaN-based optoelectronic devices 91
How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs? identification of SRH centers and modeling of trap profile 91
Experimental analysis of degradation of Multi-Quantum Well GaN-based solar cells under current stress 90
Reliability analysis of high power LEDs for automotive: impact of current and temperature 90
Solid State Lighting for horticolture: impact of LED reliability on light spectrum and intensity 89
Modeling the EQE spectral shape of InGaN-GaN Multi-Quantum Wells Solar Cells 88
Antimony selenide solar cells: non-ideal deep level response and study of trap-filling transients 87
On the importance of Fast and Accurate LED Optical and Thermal Characterization: from visible use cases to UV technologies 84
III-N optical devices: physical processes limiting efficiency and reliability 83
Degradation mechanisms of InGaN visible LEDs and AlGaN UV LEDs 83
Effect of High Monochromatic Radiation on the Electrical Performance of CIGS Solar Cell 83
Investigation on the optical stability during ageing of InGaN-based light emitting diode 82
Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence 80
Effects of the generation and relocation of defects during the aging process of InGaN-based multi quantum well light emitting diodes 74
Degradation of InGaN-based solar cells under monochromatic photoexcitation 73
Bias-dependent degradation of single quantum well on InGaN-based light emitting diode 72
Electrically- and Optically-driven Degradation Processes in InGaN-based Photodetectors 72
Stability of Perovskite-Based Mini-Modules: Experimental Analysis and Interpretation 61
Carrier generation and recombination dynamics and reliability of InGaN-based photodetectors for high power densities 60
Dynamical properties and performances of ß-Ga2O3 UVC photodetectors of extreme solar blindness 58
Modeling Cracks in Silicon-Heterojunction Photovoltaic Modules: A Real-World Case Study 52
V-pits and trench defects in GaN-based optoelectronic devices: Extensive characterization and modeling 52
Analysis of extrinsic failure mechanisms of high-power blue, red, and white LEDs for horticulture and street lighting 48
Study and Interpretation of short-term temporary reverse-bias degradation in wide-bandgap FAPbBr3 perovskite solar cells 44
RESULTS OF THE JOINT LED AGING EXPERIMENT OF THREE UNIVERSITY LABORATORIES WITHIN THE AI-TWILIGHT PROJECT 41
Evidence for optically-induced degradation in CIGS solar cells 40
Defects in InGaN QW structures: microscopic properties and modeling 34
LBIC ANALYSIS OF HETEROJUNCTION SILICON SOLAR CELLS FOR PHOTOCURRENT MAPPING AND SURFACE RECOMBINATION DETECTION 32
Bias-dependent degradation of single quantum well on InGaN based light emitting diode 31
The impact of surface recombination on carrier density for SiHJ solar cells 30
Totale 9.801
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Categoria #
all - tutte 29.355
article - articoli 13.421
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 371
Totale 43.147
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021218 0 0 0 0 0 0 75 28 33 30 24 28
2021/2022273 7 34 20 19 12 20 21 23 21 8 33 55
2022/2023356 43 2 8 13 48 41 26 43 68 1 30 33
2023/2024786 20 128 127 53 39 83 86 37 51 54 46 62
2024/20252.285 47 148 87 122 223 210 122 167 120 92 374 573
2025/20265.521 494 577 1.306 1.373 1.029 463 279 0 0 0 0 0
Totale 9.801