PACCAGNELLA, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 34.025
EU - Europa 3.732
AS - Asia 2.921
SA - Sud America 39
Continente sconosciuto - Info sul continente non disponibili 10
OC - Oceania 6
AF - Africa 3
Totale 40.736
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Nazione #
US - Stati Uniti d'America 34.005
CN - Cina 1.432
SG - Singapore 1.171
IT - Italia 688
FI - Finlandia 638
IE - Irlanda 582
DE - Germania 449
SE - Svezia 399
UA - Ucraina 291
FR - Francia 278
GB - Regno Unito 238
VN - Vietnam 152
RU - Federazione Russa 60
IN - India 51
TR - Turchia 34
NL - Olanda 32
BR - Brasile 29
HK - Hong Kong 20
CA - Canada 17
JP - Giappone 17
AT - Austria 12
ES - Italia 12
GR - Grecia 12
EU - Europa 10
KR - Corea 10
IR - Iran 7
DK - Danimarca 6
RO - Romania 6
TW - Taiwan 6
AR - Argentina 5
MY - Malesia 5
CH - Svizzera 4
CZ - Repubblica Ceca 4
AU - Australia 3
BE - Belgio 3
MX - Messico 3
NZ - Nuova Zelanda 3
PH - Filippine 3
PL - Polonia 3
SI - Slovenia 3
HU - Ungheria 2
KG - Kirghizistan 2
LT - Lituania 2
MA - Marocco 2
MD - Moldavia 2
NP - Nepal 2
PY - Paraguay 2
AM - Armenia 1
BD - Bangladesh 1
BG - Bulgaria 1
BO - Bolivia 1
CL - Cile 1
EC - Ecuador 1
HR - Croazia 1
IQ - Iraq 1
IS - Islanda 1
JO - Giordania 1
KH - Cambogia 1
KZ - Kazakistan 1
LK - Sri Lanka 1
LY - Libia 1
NO - Norvegia 1
PK - Pakistan 1
PT - Portogallo 1
RS - Serbia 1
TH - Thailandia 1
Totale 40.736
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Città #
Fairfield 5.598
Woodbridge 3.853
Houston 3.243
Ann Arbor 2.678
Ashburn 2.183
Seattle 2.018
Cambridge 1.963
Wilmington 1.833
Chandler 1.528
Jacksonville 1.276
Singapore 922
Boardman 738
Princeton 633
San Diego 594
Dublin 577
Santa Clara 534
Medford 397
Roxbury 352
Des Moines 318
Beijing 317
Nanjing 261
Padova 233
Helsinki 212
Leesburg 201
Dong Ket 150
Guangzhou 125
Shenyang 100
Hebei 81
Munich 81
London 71
New York 69
Nanchang 62
Norwalk 56
Mestre 55
Venice 53
Jiaxing 52
Changsha 51
Indiana 50
Shanghai 38
Tianjin 36
Los Angeles 35
Ogden 30
Milan 29
Jinan 27
Perugia 25
Kharkiv 24
Borås 22
Kilburn 19
Yenibosna 19
Redwood City 18
Hong Kong 17
Tappahannock 16
Washington 16
Falls Church 15
San Francisco 14
Zhengzhou 14
Dallas 12
New Bedfont 11
Ningbo 11
Redmond 11
Rockville 10
Rome 10
Amsterdam 9
Duncan 9
Hangzhou 9
Nuremberg 8
Philadelphia 8
Pune 8
Ravenna 8
Tokyo 8
Vicenza 8
Yellow Springs 8
Chicago 7
Chiswick 7
Hounslow 7
Lappeenranta 7
Madrid 7
Marseille 7
Acton 6
Southwark 6
Vienna 6
Auburn Hills 5
Bologna 5
Candelo 5
Delhi 5
Edinburgh 5
Haikou 5
Las Vegas 5
Pisa 5
Prescot 5
Stockholm 5
Wandsworth 5
Albino 4
Buffalo 4
Ferrara di Monte Baldo 4
Frankfurt am Main 4
Geislingen an der Steige 4
Hanover 4
Hefei 4
Istanbul 4
Totale 34.227
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Nome #
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 726
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures 658
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 Dielectrics 555
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses 370
The CMS experiment at the CERN LHC 204
Accelerated testing of RF-MEMS contact degradation through radiation sources 188
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 180
Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons 177
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 164
LOW-COST ENZYME-BASED BIOSENSOR FOR LACTIC ACID AMPEROMETRIC DETECTION Electrical Modeling and Validation for Clinical and Food Processing Applications 159
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 151
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 150
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 148
Time decay of stress induced leakage current in thin gate oxides by low-field electron injection 144
Destructive events in NAND Flash memories irradiated with heavy ions 142
Coadsorption optimization of DNA in binary self-assembled monolayer on gold electrode for electrochemical detection of oligonucleotide sequences 139
Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution 138
Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip 135
Degradation induced by X-ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout 133
MOSFET drain current reduction under Fowler-Nordheim and channel hot carrier injection before gate oxide breakdown 132
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories? 128
Low-field current on thin oxides after constant current or radiation stresses 128
Fowler-Nordheim characteristics of electron irradiated MOS capacitors 127
The on-orbit calibration of the Fermi Large Area Telescope 127
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions 125
Alignment of the CMS silicon strip tracker during stand-alone commissioning 124
From Radiation Induced Leakage Current to soft-breakdown in irradiated MOS devices with ultra-thin gate oxide 124
Impact of NBTI Aging on the Single Event Upset of SRAM Cells 124
Neutron-Induced Upsets in NAND Floating Gate Memories 124
Lactate Dehydrogenase and Glutamate Pyruvate Transaminase biosensing strategies for lactate detection on screen-printed sensors. Catalysis efficiency and interference analysis in complex matrices: from cell cultures to sport medicine 124
Neutron-induced soft errors in advanced Flash memories 123
Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation 122
Visioni del Suono. Musica elettronica all'Università di Padova 122
Effects of the Localization of the Charge in Nanocrystal Memory Cells 121
Evaluating the Impact of DfM Library Optimizations on Alpha-induced SEU Sensitivity in a Microprocessor Core 121
Error Instability in Floating Gate Flash Memories Exposed to TID 121
Total-Ionizing-Dose Effects on InGaAs FinFETs with Modified Gate-stack 121
Angular dependence of heavy ion effects in Floating Gate memory arrays 120
Using AFM related techniques for the nanoscale electrical characterization of irradiated ultrathin gate oxides 120
Increase in the Heavy-ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID 120
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 119
Deep submicron CMOS technologies for the LHC experiments 118
Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications 118
Development of a complete plasmonic grating-based sensor and its application for self-assembled monolayer detection 118
Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence 117
Total dose dependence of radiation-induced leakage current in ultra-thin gate oxides 117
Possible effects on avionics induced by Terrestrial Gamma-Ray Flashes 117
Effects of implanted hydrogen on Pd2Si formation 116
Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications 116
Electrical Stresses on Ultra-Thin Gate Oxide SOI MOSFETs after Irradiation 114
Electrochemical impedance spectroscopy study of the cells adhesion over microelectrodes array 114
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 114
Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions 113
Degradation of electron irradiated MOS capacitors 112
Total Ionizing Dose Effects on 4Mbit Phase Change Memory Arrays 112
Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions 112
A new model of tunnelling current and SILC in ultra-thin oxides 112
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs 112
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs: Impact of Bias Conditions During X-ray Exposure 112
Time Decay of Stress Induced Leakage Current in Thin Gate Oxides by Low-Field Electron Injection 111
Recovery of Low Temperature Electron Trapping in AlGaAs/InGaAs PM-HEMTs due to Impact-Ionization 111
On the Evaluation of Radiation-Induced Transient Faults in Flash-Based FPGAs 110
Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters 110
Radiation damage on dielectrics: Single event effects 109
Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories 109
Accelerated Wear-out of Ultra-thin Gate Oxides After Irradiation 109
Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays 109
Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad 109
TID sensitivity of NAND Flash memory building blocks 109
The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays 108
Simulation of the time-dependent breakdown characteristics of heavy ion irradiated gate oxides using a mean-reverting poisson-gaussian process 108
Radiation-Induced Breakdown in 1.7 nm Oxynitrided Gate Oxides 108
Impact of Bias Temperature Instability on Soft Error Susceptibility 108
Mechanical properties of ion implanted glasses 108
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 108
Peculiar characteristics of nanocrystal memory cells programming window 107
Radiation Effects in NAND Flash Memories 107
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells 107
Logistic Modeling of Progressive Breakdown in Ultrathin Gate Oxides 106
Development of a disposable gold electrodes-based sensor for electrochemical measurements of cDNA hybridization 106
Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress 105
Gate Rupture in Ultra-Thin Gate Oxides Irradiated With Heavy Ions 105
Silicon diffusion in aluminium 105
Thin-film transistors with sputtered CdSe as semiconductor 104
Evidence of interface trap creation by hot electrons in AlGaAs/GaAs HEMT's 104
Study of Neutron Damage in GaAs MESFETs 103
A Novel Approach to Quantum Point Contact for Post Soft Breakdown Conduction 103
Drain Current Decrease in MOSFETs After Heavy Ion Irradiation 103
Radiation Induced Leakage Current and Stress Induced Leakage Current in Ultra-Thin Gate Oxides 103
Palladium on Plastic Substrates for Plasmonic Devices 103
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells 103
Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress 103
Stand-alone cosmic muon reconstruction before installation of the CMS silicon strip tracker 102
Ionising radiation and electrical stress on nanocrystal memory cell array 102
Power converters for future LHC experiments 102
MRS detectors with high gain for registration of weak visible and UV light fluxes 102
FERMI LARGE AREA TELESCOPE OBSERVATIONS OF THE VELA PULSAR 101
Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells 101
Neutron induced damage in GaAs MESFETs 101
Ion beam mixing at the Fe/SiO2 interface 101
Totale 13.775
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Categoria #
all - tutte 147.707
article - articoli 100.343
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 363
patent - brevetti 1.133
selected - selezionate 0
volume - volumi 5.142
Totale 254.688
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20204.777 0 0 0 0 0 0 892 1.094 1.139 771 564 317
2020/20215.045 313 400 302 489 233 359 233 581 749 366 605 415
2021/20226.985 140 737 1.327 363 317 281 343 782 310 143 767 1.475
2022/20234.188 876 200 98 490 706 589 86 294 445 34 244 126
2023/20242.058 140 289 196 171 99 135 79 140 87 176 269 277
2024/20254.224 1.185 630 384 371 1.325 305 24 0 0 0 0 0
Totale 41.029