We investigate total ionizing dose effects on 4Mbit phase change memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the bit-line and the word-line selection MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations.
Total Ionizing Dose Effects on 4Mbit Phase Change Memory Arrays
GASPERIN, ALBERTO;WRACHIEN, NICOLA;CESTER, ANDREA;PACCAGNELLA, ALESSANDRO;
2007
Abstract
We investigate total ionizing dose effects on 4Mbit phase change memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the bit-line and the word-line selection MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations.
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