We investigate total ionizing dose effects on 4Mbit phase change memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the bit-line and the word-line selection MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations.

Total Ionizing Dose Effects on 4Mbit Phase Change Memory Arrays

GASPERIN, ALBERTO;WRACHIEN, NICOLA;CESTER, ANDREA;PACCAGNELLA, ALESSANDRO;
2007

Abstract

We investigate total ionizing dose effects on 4Mbit phase change memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the bit-line and the word-line selection MOSFETs. Finally, radiation does not compromise the functionality of the SET and the RESET operations.
2007
Radiation and Its Effects on Components and Systems, 2007.
9781424417049
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2434362
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