We have investigated the time stability of low-field Stress Induced Leakage Current (SILC) in thin oxides. By injecting a low gate current, SILC can be strongly reduced at room temperature. This behaviour may be attributed to electron trapping in those weak spots generated by the electrical stress.
Time Decay of Stress Induced Leakage Current in Thin Gate Oxides by Low-Field Electron Injection
CESTER, ANDREA;A. PACCAGNELLA;
1999
Abstract
We have investigated the time stability of low-field Stress Induced Leakage Current (SILC) in thin oxides. By injecting a low gate current, SILC can be strongly reduced at room temperature. This behaviour may be attributed to electron trapping in those weak spots generated by the electrical stress.
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