We have investigated the time stability of low-field Stress Induced Leakage Current (SILC) in thin oxides. By injecting a low gate current, SILC can be strongly reduced at room temperature. This behaviour may be attributed to electron trapping in those weak spots generated by the electrical stress.

Time Decay of Stress Induced Leakage Current in Thin Gate Oxides by Low-Field Electron Injection

CESTER, ANDREA;A. PACCAGNELLA;
1999

Abstract

We have investigated the time stability of low-field Stress Induced Leakage Current (SILC) in thin oxides. By injecting a low gate current, SILC can be strongly reduced at room temperature. This behaviour may be attributed to electron trapping in those weak spots generated by the electrical stress.
1999
10th Workshop on Dielectrics in Microelectronics - WODIM99
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/188303
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