We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitatively predict the gate current across ultra-thin oxides. Simulations nicely fit the experimental quantum oscillations of the gate current in the Fowler-Nordheim tunnelling regime. The oscillation period of the gate current has been empirically correlated with the oxide thickness. The low-field Stress Induced Leakage Current can be fitted by our model as well, by inserting oxide traps mediating an inelastic trap-assisted tunnelling.

A new model of tunnelling current and SILC in ultra-thin oxides

PACCAGNELLA, ALESSANDRO;
1998

Abstract

We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitatively predict the gate current across ultra-thin oxides. Simulations nicely fit the experimental quantum oscillations of the gate current in the Fowler-Nordheim tunnelling regime. The oscillation period of the gate current has been empirically correlated with the oxide thickness. The low-field Stress Induced Leakage Current can be fitted by our model as well, by inserting oxide traps mediating an inelastic trap-assisted tunnelling.
1998
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST
International Electron Devices Meeting (IEDM)
0780347749
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/176035
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