CHINI, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 3.080
AS - Asia 1.529
EU - Europa 616
AF - Africa 289
SA - Sud America 242
OC - Oceania 31
Continente sconosciuto - Info sul continente non disponibili 23
Totale 5.810
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Nazione #
US - Stati Uniti d'America 2.955
SG - Singapore 508
CN - Cina 324
VN - Vietnam 179
HK - Hong Kong 146
BR - Brasile 125
IT - Italia 75
FI - Finlandia 66
DE - Germania 63
PL - Polonia 62
FR - Francia 58
BD - Bangladesh 43
IN - India 39
UA - Ucraina 36
SE - Svezia 34
TR - Turchia 29
AR - Argentina 27
JP - Giappone 23
GB - Regno Unito 22
CO - Colombia 20
IQ - Iraq 20
EG - Egitto 17
ID - Indonesia 16
PK - Pakistan 16
RU - Federazione Russa 16
ZA - Sudafrica 16
ET - Etiopia 15
VE - Venezuela 15
KR - Corea 14
SN - Senegal 14
CA - Canada 13
MX - Messico 13
BO - Bolivia 12
CZ - Repubblica Ceca 12
JM - Giamaica 12
JO - Giordania 12
SA - Arabia Saudita 12
TN - Tunisia 12
BE - Belgio 11
CR - Costa Rica 11
EC - Ecuador 11
GR - Grecia 11
NL - Olanda 11
NP - Nepal 11
UZ - Uzbekistan 11
AD - Andorra 10
CG - Congo 10
DO - Repubblica Dominicana 10
LV - Lettonia 10
ZM - Zambia 10
BW - Botswana 9
KH - Cambogia 9
LY - Libia 9
MA - Marocco 9
UY - Uruguay 9
YT - Mayotte 9
ZW - Zimbabwe 9
AT - Austria 8
AU - Australia 8
BA - Bosnia-Erzegovina 8
CL - Cile 8
ES - Italia 8
KE - Kenya 8
LA - Repubblica Popolare Democratica del Laos 8
MN - Mongolia 8
MR - Mauritania 8
NZ - Nuova Zelanda 8
PH - Filippine 8
TZ - Tanzania 8
AE - Emirati Arabi Uniti 7
BF - Burkina Faso 7
BS - Bahamas 7
GP - Guadalupe 7
IE - Irlanda 7
IR - Iran 7
PR - Porto Rico 7
TH - Thailandia 7
UG - Uganda 7
AM - Armenia 6
AO - Angola 6
BG - Bulgaria 6
BY - Bielorussia 6
CI - Costa d'Avorio 6
CV - Capo Verde 6
CW - ???statistics.table.value.countryCode.CW??? 6
DZ - Algeria 6
GA - Gabon 6
IS - Islanda 6
KZ - Kazakistan 6
MW - Malawi 6
MZ - Mozambico 6
NO - Norvegia 6
PF - Polinesia Francese 6
PS - Palestinian Territory 6
PY - Paraguay 6
RO - Romania 6
SK - Slovacchia (Repubblica Slovacca) 6
BJ - Benin 5
CH - Svizzera 5
EE - Estonia 5
Totale 5.569
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Città #
Ashburn 344
Singapore 319
San Jose 316
Fairfield 292
Houston 240
Ann Arbor 239
Woodbridge 193
Hong Kong 137
Jacksonville 124
Wilmington 124
Seattle 120
Chandler 109
Santa Clara 94
Cambridge 79
Beijing 75
Bytom 56
Ho Chi Minh City 56
Princeton 45
Boardman 43
Hanoi 43
Des Moines 33
Helsinki 33
Los Angeles 32
Guangzhou 31
Lauterbourg 30
Medford 24
New York 20
San Diego 16
São Paulo 16
Addis Ababa 15
Baghdad 14
Dakar 14
Munich 14
Nanjing 13
Amman 11
Chicago 11
Orem 11
Tashkent 11
Tokyo 11
Andorra la Vella 10
Da Nang 10
Dallas 10
Istanbul 9
Lusaka 9
Phnom Penh 9
San José 9
Shenzhen 9
Harare 8
Riga 8
Tianjin 8
Ulan Bator 8
Buffalo 7
Dar es Salaam 7
Guayaquil 7
Kampala 7
Montevideo 7
Nassau 7
Nouakchott 7
Roxbury 7
Bologna 6
Brooklyn 6
Cairo 6
Chennai 6
Dhaka 6
Gaborone 6
Jiaxing 6
Johannesburg 6
Kingston 6
Libreville 6
London 6
Mamoudzou 6
Medellín 6
Ouagadougou 6
Padova 6
Praia 6
Redondo Beach 6
Redwood City 6
San Francisco 6
Santa Cruz 6
Shanghai 6
Tripoli 6
Vienna 6
Vientiane 6
Abidjan 5
Amsterdam 5
Bangkok 5
Bogotá 5
Brazzaville 5
Brussels 5
Bắc Ninh 5
Can Tho 5
Cayenne 5
Conakry 5
Dong Ket 5
Indiana 5
Kathmandu 5
Luanda 5
Managua 5
Manassas 5
Maputo 5
Totale 3.800
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Nome #
2.1 A/mm current density AlGaN/GaN HEMT 281
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 254
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 248
Trap Characterization in Buried-Gate N-Channel 6H-SiC JFETs 243
Characterization of GaN based MESFETs by comparing Electroluminescence, Photoionization and Cathodoluminescence spectroscopy 236
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 232
Diagnosis of trapping phenomena in GaN MESFETs 229
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 222
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs 218
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs 194
GaN-based power devices: Physics, reliability, and perspectives 192
Parasitic effects and long term stability of InP-based HEMTs 188
Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs 185
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 185
Deep-Level Characterization in 6H-SiC JFETs by Means of Two-Dimensional Device Simulations 180
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs 178
Dependence of Impact Ionization and Kink on Surface-Deep-Level Dynamics in AlGaAs/GaAs HFETs 167
Characterization of GaN-based metal-semiconductor field-effect transistors by comparing Electroluminescence, Photoionization and Cathodoluminescence Spectroscopy 166
Current Collapse in AlGaN/GaN HEMTs 156
Reliability aspects of GaN microwave devices 151
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 151
Influence of surface-trap dynamics on impact-ionization and kink phenomena in AlGaAs/GaAs HFETs 150
Characterization and reliability of InP-based HEMTs implemented with different process options 148
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 146
Instabilities and degradation in GaN-based devices 138
Reliability aspects of GaN microwave devices 134
A novel test methodology for RON and VTH monitoring in GaN HEMTs during switch-mode operation 131
Trap-Related Effects in 6H-SiC Buried-Gate JFET's 129
Electrostatic discharge and electrical overstress on GaN/InGaN Light Emitting Diodes 128
Effects of Thermal Annealing on Current Degradation in Enhancement Mode Pd gate InAlAs/InGaAs/InP pHEMTs 125
Deep traps related effects in GaN MESFETs grown on sapphire substrate 124
Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT's 106
Physical Modelling of Charge Trapping Effects 95
Totale 5.810
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Categoria #
all - tutte 17.364
article - articoli 7.621
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 233
Totale 25.218
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022275 0 30 44 8 14 15 7 41 16 3 44 53
2022/2023305 60 1 1 28 57 64 0 21 46 1 21 5
2023/2024131 20 12 20 14 8 21 2 1 3 2 13 15
2024/2025680 0 27 24 40 81 54 45 60 26 17 137 169
2025/20262.740 105 218 357 363 341 121 304 295 313 159 111 53
2026/202781 75 6 0 0 0 0 0 0 0 0 0 0
Totale 5.810