The wide bandgap semiconductor gallium nitride (GaN) and related materials are highly attractive for high-power and high-temperature applications [1]. However, instabilities related to material and trapping effects limited the reproducibility and the performance of these devices. A decrease of the drain current, ID, during operation and after repeated measurements has been observed by several authors [2,3], and generically identified as “current collapse”. In this work we have investigated the mechanisms that lead to ID decrease in GaN MESFETs grown by MOCVD on a (0001) sapphire substrate, see Fig. 1, in the attempt to identifying the deep traps involved.
Deep traps related effects in GaN MESFETs grown on sapphire substrate
CHINI, ALESSANDRO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2000
Abstract
The wide bandgap semiconductor gallium nitride (GaN) and related materials are highly attractive for high-power and high-temperature applications [1]. However, instabilities related to material and trapping effects limited the reproducibility and the performance of these devices. A decrease of the drain current, ID, during operation and after repeated measurements has been observed by several authors [2,3], and generically identified as “current collapse”. In this work we have investigated the mechanisms that lead to ID decrease in GaN MESFETs grown by MOCVD on a (0001) sapphire substrate, see Fig. 1, in the attempt to identifying the deep traps involved.
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