The hole multiplication factor in pnp In0.52Al0.48 As/In0.53Ga0.47As single heterojunction bipolar transistors (HBTs) has been measured as a function of the base-collector bias. The hole impact ionization coefficient βp has been estimated by taking into account the Early effect, the collector-base leakage current ICBO, thermal effects and the spread in the nominal device processing parameters. Numerical corrections for dead space and current-induced collector charge density variations were made. The data obtained in this way agree with the most recent photomultiplication measurements available in literature
Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs
BUTTARI, DARIO;CHINI, ALESSANDRO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2000
Abstract
The hole multiplication factor in pnp In0.52Al0.48 As/In0.53Ga0.47As single heterojunction bipolar transistors (HBTs) has been measured as a function of the base-collector bias. The hole impact ionization coefficient βp has been estimated by taking into account the Early effect, the collector-base leakage current ICBO, thermal effects and the spread in the nominal device processing parameters. Numerical corrections for dead space and current-induced collector charge density variations were made. The data obtained in this way agree with the most recent photomultiplication measurements available in literature
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