In this paper, deep levels are characterized in 6H-SiC, buried gate, n-channel JFETs by means of capacitance- mode (C-) and current-mode (I-) Deep Level Transient Spectroscopy (DLTS) and transconductance (gm) frequency dispersion measurements. Moreover, the drain-current (ID) transients following a gate-to-source voltage (VGS) step are analyzed both experimentally and through two-dimensional device simulations allowing the dierent deep levels to be localized both energetically and spatially.
Trap-Related Effects in 6H-SiC Buried-Gate JFET's
MENEGHESSO, GAUDENZIO;CHINI, ALESSANDRO;ZANONI, ENRICO;
2001
Abstract
In this paper, deep levels are characterized in 6H-SiC, buried gate, n-channel JFETs by means of capacitance- mode (C-) and current-mode (I-) Deep Level Transient Spectroscopy (DLTS) and transconductance (gm) frequency dispersion measurements. Moreover, the drain-current (ID) transients following a gate-to-source voltage (VGS) step are analyzed both experimentally and through two-dimensional device simulations allowing the dierent deep levels to be localized both energetically and spatially.
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