Results of ESD testing (HBM and TLP) carried out on commercially available GaN LEDs grown on sapphire or silicon carbide will be presented. A non optimal design of layout leads to current crowding phenomena determining premature failure. Devices grown on SiC, adopting vertical current flow, and optimized layout and technology, achieved maximum ESD robustness in excess of 8 kV HBM, 5 A TLP.
Electrostatic discharge and electrical overstress on GaN/InGaN Light Emitting Diodes
MENEGHESSO, GAUDENZIO;CHINI, ALESSANDRO;ZANONI, ENRICO;
2001
Abstract
Results of ESD testing (HBM and TLP) carried out on commercially available GaN LEDs grown on sapphire or silicon carbide will be presented. A non optimal design of layout leads to current crowding phenomena determining premature failure. Devices grown on SiC, adopting vertical current flow, and optimized layout and technology, achieved maximum ESD robustness in excess of 8 kV HBM, 5 A TLP.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
