ROCCATO, NICOLA
 Distribuzione geografica
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Continente #
AS - Asia 1.409
EU - Europa 1.202
NA - Nord America 946
AF - Africa 315
SA - Sud America 253
OC - Oceania 31
Continente sconosciuto - Info sul continente non disponibili 15
Totale 4.171
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Nazione #
US - Stati Uniti d'America 811
SG - Singapore 507
IT - Italia 422
CN - Cina 259
HK - Hong Kong 154
BR - Brasile 144
DE - Germania 125
PL - Polonia 93
VN - Vietnam 85
FI - Finlandia 55
KR - Corea 50
FR - Francia 46
GB - Regno Unito 46
JP - Giappone 43
RU - Federazione Russa 38
AT - Austria 36
NL - Olanda 30
CH - Svizzera 29
IN - India 28
MA - Marocco 25
ES - Italia 22
IE - Irlanda 20
MX - Messico 19
AR - Argentina 18
MY - Malesia 18
TW - Taiwan 18
ID - Indonesia 17
IQ - Iraq 17
CA - Canada 15
PK - Pakistan 15
TR - Turchia 15
CL - Cile 14
KE - Kenya 14
UA - Ucraina 14
VE - Venezuela 14
ZA - Sudafrica 14
AL - Albania 13
CV - Capo Verde 13
DK - Danimarca 13
DO - Repubblica Dominicana 13
SE - Svezia 13
GN - Guinea 12
GR - Grecia 12
MU - Mauritius 12
NI - Nicaragua 12
SK - Slovacchia (Repubblica Slovacca) 12
UY - Uruguay 12
AO - Angola 11
BA - Bosnia-Erzegovina 11
CD - Congo 11
CO - Colombia 11
IR - Iran 11
LY - Libia 11
NZ - Nuova Zelanda 11
UZ - Uzbekistan 11
BE - Belgio 10
BJ - Benin 10
BY - Bielorussia 10
CM - Camerun 10
CZ - Repubblica Ceca 10
HU - Ungheria 10
JO - Giordania 10
PS - Palestinian Territory 10
RS - Serbia 10
SA - Arabia Saudita 10
XK - ???statistics.table.value.countryCode.XK??? 10
AE - Emirati Arabi Uniti 9
BB - Barbados 9
CY - Cipro 9
GF - Guiana Francese 9
LV - Lettonia 9
MG - Madagascar 9
NG - Nigeria 9
SI - Slovenia 9
BD - Bangladesh 8
BG - Bulgaria 8
BO - Bolivia 8
CI - Costa d'Avorio 8
EC - Ecuador 8
ET - Etiopia 8
GM - Gambi 8
IS - Islanda 8
LA - Repubblica Popolare Democratica del Laos 8
ML - Mali 8
NE - Niger 8
PA - Panama 8
PH - Filippine 8
PT - Portogallo 8
PY - Paraguay 8
UG - Uganda 8
YT - Mayotte 8
AM - Armenia 7
BZ - Belize 7
DZ - Algeria 7
EE - Estonia 7
EG - Egitto 7
GE - Georgia 7
HN - Honduras 7
IL - Israele 7
KG - Kirghizistan 7
Totale 3.896
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Città #
Singapore 279
Ashburn 209
Padova 158
Hong Kong 132
Riese Pio X 106
Santa Clara 82
Beijing 81
Bytom 70
Boardman 48
Ho Chi Minh City 46
Munich 45
Los Angeles 39
Padua 38
Hefei 29
Turku 29
Shanghai 26
Tokyo 26
Berlin 23
New York 23
Chandler 21
Vienna 19
Buffalo 17
Helsinki 17
Turin 17
São Paulo 15
Nuremberg 13
Chicago 12
Dublin 12
Managua 12
Redondo Beach 12
Conakry 11
Hanoi 11
Ithaca 11
Milan 11
New Delhi 11
Salt Lake City 11
Seoul 11
Tower Hamlets 11
Casablanca 10
Luanda 10
Montevideo 10
Nairobi 10
Praia 10
Tashkent 10
Tripoli 10
Zurich 10
Amman 9
Cotonou 9
Dallas 9
Lausanne 9
London 9
Tempe 9
Amsterdam 8
Antananarivo 8
Auckland 8
Kampala 8
Kinshasa 8
Kuala Lumpur 8
Minsk 8
Panama City 8
Riga 8
Suwon 8
Tirana 8
Vientiane 8
Warsaw 8
Abidjan 7
Addis Ababa 7
Bridgetown 7
Budapest 7
Cayenne 7
Fairfield 7
Johannesburg 7
Lappeenranta 7
Limassol 7
Ljubljana 7
Marrakesh 7
Niamey 7
Noumea 7
Washington 7
Yongin-si 7
Athens 6
Bamako 6
Brooklyn 6
Falkenstein 6
Kigali 6
Kingstown 6
Lagos 6
Mamoudzou 6
Maputo 6
Montreal 6
Nouakchott 6
Pristina 6
Santo Domingo 6
Skopje 6
Stockholm 6
Tbilisi 6
Tel Aviv 6
Ulan Bator 6
Wroclaw 6
Yerevan 6
Totale 2.207
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Nome #
Modeling the optical degradation kinetics of UV-C LEDs 192
Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs 156
Optical Power Degradation Related to Turn-On in Commercial 265 nm UV-C LEDs 146
Fast Characterization of Power LEDs: Circuit Design and Experimental Results 142
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations 137
Defects, performance, and reliability in UVC LEDs 137
Defects and Reliability of GaN-Based LEDs: Review and Perspectives 136
Changes in the extraction and collection efficiency of GaN-based MQW solar cells under optical step-stress 127
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations 125
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics 121
Reliability and efficiency-limiting mechanisms in III-N LEDs: an experimental analysis assisted by numerical simulations 116
Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy 109
Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements 108
III-N optoelectronics: defects, reliability and challenges 107
Ageing effects on optical power characteristics and defects in SQW UV-C LEDs 106
Probing carrier transport and recombination processes in dichromatic GaN-based LEDs: a nonequilibrium Green’s function study 104
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics 104
Degradation Physics of UV LEDs: from experimental data to models 103
On the degradation mechanisms of state-of-the-art UV-C LEDs 102
Modeling of the electrical characteristics and degradation mechanisms of UV-C LEDs 100
Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer 99
Investigation of degradation dynamics of 265 nm LEDs assisted by EL measurements and numerical simulations 98
Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics 96
DLTS-based defect analysis in UV-C single QW LEDs during a constant current stress 94
UV LED reliability: degradation mechanisms and challenges 92
Modeling of TAT-related forward leakage current in InGaN/GaN SQW LEDs based on experimentally-determined defects parameters 91
Modeling of Transport Mechanisms in Silicon Heterojunction Solar Cells: Trap-Assisted Tunneling at the Emitter Interface 82
III-N optoelectronic devices: understanding the physics of electro-optical degradation 82
Lifetime limiting degradation mechanisms of state-of-the-art UVC LEDs 82
Reliability analysis of high power LEDs for automotive: impact of current and temperature 82
On the importance of Fast and Accurate LED Optical and Thermal Characterization: from visible use cases to UV technologies 80
Discriminating the effects of deep-levels in InGaN/GaN LEDs: impact on forward leakage current 79
III-N optical devices: physical processes limiting efficiency and reliability 76
UV LEDs: defects and physics of degradation 74
Physical processes leading to the degradation of UV-C LEDs and their modeling by defect reactions and numerical simulations 70
Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress 70
Modeling the electrical characteristic and degradation mechanisms of UV-C LEDs 68
Positive and negative ageing of AlGaN-based UVC LEDs: experimental analysis, interpretation and modeling 65
Modeling the degradation mechanisms of UV-C LEDs 55
Modeling the capacitance–voltage characteristics of AlGaN-based UV-C LEDs 51
Defects and reliability of UVC-LEDs 50
Spectral components, initial improvement, and degradation of 265 nm UV-C LEDs 48
V-pits and trench defects in GaN-based optoelectronic devices: Extensive characterization and modeling 39
Defects in InGaN QW structures: microscopic properties and modeling 28
Totale 4.229
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Categoria #
all - tutte 12.664
article - articoli 4.330
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 16.994
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202235 0 0 6 0 0 1 4 3 1 0 14 6
2022/2023138 6 4 10 2 15 13 16 12 25 0 9 26
2023/2024334 34 28 19 31 38 40 31 9 27 18 24 35
2024/20251.391 23 45 146 59 108 195 89 108 81 37 177 323
2025/20262.331 285 228 697 671 431 19 0 0 0 0 0 0
Totale 4.229