BAGATIN, MARTA
 Distribuzione geografica
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Continente #
NA - Nord America 7.729
EU - Europa 1.256
AS - Asia 678
SA - Sud America 6
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 3
Totale 9.677
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Nazione #
US - Stati Uniti d'America 7.724
CN - Cina 368
IT - Italia 337
IE - Irlanda 335
SG - Singapore 244
FI - Finlandia 140
SE - Svezia 134
DE - Germania 109
GB - Regno Unito 69
FR - Francia 53
UA - Ucraina 35
VN - Vietnam 29
GR - Grecia 12
NL - Olanda 12
JP - Giappone 9
IR - Iran 7
KR - Corea 7
ES - Italia 6
IN - India 6
CA - Canada 5
EU - Europa 5
TW - Taiwan 4
BR - Brasile 3
CH - Svizzera 3
RU - Federazione Russa 3
AU - Australia 2
BE - Belgio 2
DK - Danimarca 2
NO - Norvegia 2
TR - Turchia 2
BO - Bolivia 1
CL - Cile 1
HR - Croazia 1
KG - Kirghizistan 1
KH - Cambogia 1
NZ - Nuova Zelanda 1
PY - Paraguay 1
RO - Romania 1
Totale 9.677
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Città #
Fairfield 1.511
Woodbridge 926
Houston 770
Ann Arbor 706
Ashburn 555
Cambridge 549
Seattle 519
Wilmington 450
Dublin 333
Chandler 268
Singapore 184
Padova 154
San Diego 143
Princeton 139
Jacksonville 119
Medford 112
Des Moines 95
Beijing 68
Nanjing 60
Guangzhou 59
Boardman 58
Helsinki 50
Roxbury 36
Santa Clara 35
Leesburg 33
Dong Ket 29
Mestre 24
Munich 23
Shanghai 21
Shenyang 20
London 19
Milan 19
Nanchang 17
Venice 15
Changsha 14
Hebei 14
Jiaxing 14
Los Angeles 12
Washington 10
Duncan 9
Borås 8
Ogden 8
Cagliari 7
Jinan 7
New York 7
Redwood City 7
Rome 7
Tianjin 7
Hounslow 6
Norwalk 6
Las Vegas 5
Ningbo 5
Brendola 4
Chicago 4
Hanover 4
Kharkiv 4
Kilburn 4
Madrid 4
Tokyo 4
Albino 3
Dallas 3
Groningen 3
Indiana 3
Nürnberg 3
Oberentfelden 3
Rockville 3
Round Lake 3
San Francisco 3
Seongnam-si 3
Stockholm 3
Tabriz 3
Tappahannock 3
Acton 2
Amsterdam 2
Arlington 2
Auburn Hills 2
Bologna 2
Chiswick 2
Daan 2
Fort Collins 2
Fort Worth 2
Grenoble 2
Hamburg 2
Lappeenranta 2
L’Aquila 2
Moscow 2
Nashville 2
North York 2
Occhiobello 2
Ogaya 2
Orange 2
Parma 2
Prato 2
Prescot 2
Pune 2
Ravenna 2
Redmond 2
Rouen 2
San Jose 2
Sant'Elia Fiumerapido 2
Totale 8.395
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Nome #
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses 367
Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons 173
Destructive events in NAND Flash memories irradiated with heavy ions 137
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions 124
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories? 123
Neutron-induced soft errors in advanced Flash memories 122
Impact of NBTI Aging on the Single Event Upset of SRAM Cells 122
Neutron-Induced Upsets in NAND Floating Gate Memories 120
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 117
Error Instability in Floating Gate Flash Memories Exposed to TID 117
Increase in the Heavy-ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID 116
Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications 114
Possible effects on avionics induced by Terrestrial Gamma-Ray Flashes 114
Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence 113
Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions 110
Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions 109
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 109
Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad 107
Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories 105
Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays 105
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells 105
TID sensitivity of NAND Flash memory building blocks 105
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 104
Radiation Effects in NAND Flash Memories 101
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells 101
Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells 99
Total Ionizing Dose Effects in 3-D NAND Flash Memories 97
A Multi-Megarad, Radiation Hardened by Design 512 kbit SRAM in CMOS Technology 96
Proton-Induced Upsets in 41-nm NAND Floating Gate Cells 96
Analysis of TID failure modes in SRAM-based FPGA based on gamma-ray and synchrotron X-ray irradiation 95
Single Event Effects in 90-nm Phase Change Memories 92
Impact of total dose on heavy-ion upsets in floating gate arrays 91
Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications 90
Radiation environment in the ITER neutral beam injector prototype 90
Muon-induced soft errors in 16-nm NAND flash memories 89
Degradation of Sub 40-nm NAND Flash Memories Under Total Dose Irradiation 88
Investigation of Supply Current Spikes in Flash Memories Using Ion-Electron Emission Microscopy 88
Total Ionizing Dose Effects in Si-Based Tunnel FETs 88
Sample-to-Sample Variability of Floating Gate Errors Due to Total Ionizing Dose 88
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors 88
CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments 88
A Study on the Short- and Long-Term Effects of X-Ray Exposure on NAND Flash Memories 87
TID Sensitivity of NAND Flash Memory Building Blocks 87
Radiation Environment in the ITER Neutral Beam Injector Prototype 86
Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories 86
Total Suppression of Dynamic-Ron in AlGaN/GaN-HEMTs Through Proton Irradiation 86
Sensitivity of NOR Flash memories to wide-energy spectrum neutrons during accelerated tests 85
Single and Multiple Cell Upsets in 25-nm NAND Flash Memories 85
Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation 84
Space and terrestrial radiation effects in flash memories 84
Soft errors in floating gate memory cells: A review 83
Proton-induced upsets in 41-nm NAND floating gate cells 82
SEE tests of the NAND flash radiation tolerant intelligent memory stack 82
Space Environment Effects on Flexible, Low-Voltage Organic Thin-Film Transistors 82
Atmospheric Neutron Soft Errors in 3D NAND Flash Memories 82
Ionizing radiation compatibility in the MITICA neutral beam prototype 80
Effects of high energy x ray and proton irradiation on lead zirconate titanate thin films' dielectric and piezoelectric response 80
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 80
Factors impacting the temperature dependence of soft errors in commercial SRAMs 80
Proton irradiation effects on commercial laser diodes 78
Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs 78
Effects of Ionizing Radiation in Flash Memories 78
Upsets in Phase Change Memories Due to High-LET Heavy Ions Impinging at an Angle 77
Neutron and alpha ser in advanced NAND Flash memories 74
65 nm technology for HEP: Status and perspective 74
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 73
Radiation vulnerability in 65 nm CMOS I/O transistors after exposure to grad dose 73
Annealing of heavy-ion induced floating gate errors: LET and feature size dependence 73
Heavy-Ion Induced Threshold Voltage Shifts in Sub 70-nm Charge-Trap Memory Cells 72
Experimental and Simulation Study of the Effects of Heavy-ion Irradiation on HfO2-based RRAM Cells 72
Heavy-ion induced single event upsets in phase-change memories 72
A new hardware/software platform and a new 1/E neutron source for soft error studies: Testing FPGAs at the ISIS facility 72
Neutron and Alpha Single Event Upsets in Advanced NAND Flash Memories 71
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 71
Sensitive Volume and Extreme Shifts in Floating Gate Cells Irradiated with Heavy Ions 71
Impact of Heavy-Ion Strikes on Minimum-Size MOSFETs With Ultra-Thin Gate Oxide 70
Upsets in Erased Floating Gate Cells with High-Energy Protons 70
Effects of bias on the radiation responses of Si-based TFETs 69
Design implementation and test results of the RD53A, a 65 nm large scale chip for next generation pixel detectors at the HL-LHC 69
Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories 69
Radiation and particle effects on avionics induced by Terrestrial Gamma-Ray Flashes 68
High-reliability fault tolerant digital systems in nanometric technologies: Characterization and design methodologies 67
Temperature dependence of neutron-induced soft errors in SRAMs 67
A low cost robust radiation hardened flip-flop circuit 67
A Heavy-Ion Detector Based on 3-D NAND Flash Memories 67
Proton-Induced Upsets in SLC and MLC NAND Flash Memories 66
Drain Current Collapse in 65 nm pMOS Transistors After Exposure to Grad Dose 66
Complete loss of functionality and permanent page fails in NAND flash memories 66
Effects of electrical stress and ionizing radiation on Si-based TFETs 64
Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories 64
Effects of high-energy electrons in advanced NAND flash memories 64
Radiation Effects in Flash Memories 64
Heavy-ion upset immunity of RRAM cells based on thin HfO2layers 63
Alpha-induced soft errors in Floating Gate flash memories 62
Atmospheric-like neutron attenuation during accelerated neutron testing with multiple printed circuit boards 61
RD53A: a large scale prototype for HL-LHC silicon pixel detector phase 2 upgrades 60
Scaling trends of neutron effects in MLC NAND Flash memories 59
Simulation and Experiment in Neutron Induced Single Event Effects in SRAM 59
Fast neutron irradiation tests of flash memories used in space environment at the ISIS spallation neutron source 55
First tests of a new facility for device-level, board-level and system-level neutron irradiation of microelectronics 55
Totale 8.894
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Categoria #
all - tutte 35.223
article - articoli 22.796
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 784
Totale 58.803
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.652 0 0 0 135 224 176 230 252 279 167 119 70
2020/20211.249 66 95 78 126 30 77 70 136 197 90 184 100
2021/20221.714 34 193 304 108 80 43 83 212 88 34 163 372
2022/20231.027 214 25 41 102 169 106 39 80 90 12 84 65
2023/2024726 58 98 88 76 50 51 23 26 20 89 79 68
2024/2025347 13 158 89 87 0 0 0 0 0 0 0 0
Totale 9.801