BAGATIN, MARTA
 Distribuzione geografica
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Continente #
NA - Nord America 8.684
EU - Europa 2.328
AS - Asia 2.305
SA - Sud America 610
AF - Africa 492
OC - Oceania 53
Continente sconosciuto - Info sul continente non disponibili 40
Totale 14.512
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Nazione #
US - Stati Uniti d'America 8.433
SG - Singapore 787
CN - Cina 481
IT - Italia 464
BR - Brasile 414
HK - Hong Kong 391
IE - Irlanda 351
DE - Germania 218
FI - Finlandia 188
PL - Polonia 164
SE - Svezia 151
VN - Vietnam 128
GB - Regno Unito 90
RU - Federazione Russa 89
NL - Olanda 72
FR - Francia 67
AT - Austria 54
UA - Ucraina 52
AR - Argentina 41
KR - Corea 35
ES - Italia 34
EC - Ecuador 32
JP - Giappone 30
MX - Messico 30
ZA - Sudafrica 30
IN - India 28
IQ - Iraq 24
VE - Venezuela 24
GR - Grecia 23
TR - Turchia 23
CO - Colombia 22
CH - Svizzera 21
ID - Indonesia 21
XK - ???statistics.table.value.countryCode.XK??? 21
CA - Canada 20
RO - Romania 20
SO - Somalia 20
BE - Belgio 19
CI - Costa d'Avorio 19
IR - Iran 19
PK - Pakistan 19
AE - Emirati Arabi Uniti 18
AO - Angola 18
MA - Marocco 18
NP - Nepal 18
DZ - Algeria 17
EE - Estonia 17
KH - Cambogia 17
PY - Paraguay 17
AU - Australia 16
AZ - Azerbaigian 16
BA - Bosnia-Erzegovina 16
DO - Repubblica Dominicana 16
LB - Libano 16
MG - Madagascar 16
MK - Macedonia 16
VC - Saint Vincent e Grenadine 16
AL - Albania 15
BG - Bulgaria 15
JM - Giamaica 15
JO - Giordania 15
NO - Norvegia 15
RE - Reunion 15
RW - Ruanda 15
SA - Arabia Saudita 15
TN - Tunisia 15
BZ - Belize 14
CL - Cile 14
CW - ???statistics.table.value.countryCode.CW??? 14
KE - Kenya 14
KZ - Kazakistan 14
UG - Uganda 14
YT - Mayotte 14
BJ - Benin 13
CV - Capo Verde 13
DK - Danimarca 13
HU - Ungheria 13
IS - Islanda 13
LA - Repubblica Popolare Democratica del Laos 13
ME - Montenegro 13
MZ - Mozambico 13
PS - Palestinian Territory 13
TH - Thailandia 13
BO - Bolivia 12
BY - Bielorussia 12
GP - Guadalupe 12
LC - Santa Lucia 12
MR - Mauritania 12
MU - Mauritius 12
NZ - Nuova Zelanda 12
PR - Porto Rico 12
PT - Portogallo 12
SK - Slovacchia (Repubblica Slovacca) 12
TJ - Tagikistan 12
UY - Uruguay 12
UZ - Uzbekistan 12
ZW - Zimbabwe 12
BD - Bangladesh 11
CD - Congo 11
CG - Congo 11
Totale 14.001
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Città #
Fairfield 1.511
Woodbridge 926
Houston 773
Ann Arbor 706
Ashburn 669
Cambridge 549
Seattle 521
Singapore 473
Wilmington 450
Hong Kong 381
Dublin 345
Chandler 268
Boardman 184
Padova 171
Bytom 147
San Diego 143
Princeton 139
Santa Clara 127
Jacksonville 119
Beijing 118
Medford 112
Des Moines 95
Munich 94
Nanjing 61
Guangzhou 59
Helsinki 58
Los Angeles 40
Milan 36
Roxbury 36
Leesburg 33
São Paulo 32
Ho Chi Minh City 31
Dong Ket 29
Turku 29
Vienna 29
Hefei 27
Shanghai 27
Mestre 24
London 23
Chicago 21
Shenyang 21
Hanoi 20
Abidjan 18
Seoul 18
Buffalo 17
Luanda 17
Nanchang 17
Rio de Janeiro 17
San Francisco 17
Tokyo 17
Baku 16
New York 16
Phnom Penh 16
Pristina 16
Kigali 15
Kingstown 15
Venice 15
Amman 14
Antananarivo 14
Changsha 14
Hebei 14
Jiaxing 14
Nuremberg 14
Padua 14
Rome 14
Johannesburg 13
Kampala 13
Nairobi 13
Quito 13
Willemstad 13
Cape Town 12
Castries 12
Cotonou 12
Dushanbe 12
Brooklyn 11
Harare 11
Lusaka 11
Maputo 11
Montevideo 11
Nouakchott 11
Tashkent 11
Vientiane 11
Washington 11
Asunción 10
Boston 10
Brasília 10
Brussels 10
Dakar 10
Praia 10
Skopje 10
Stockholm 10
Tallinn 10
Ulan Bator 10
Bamako 9
Bishkek 9
Cayenne 9
Conakry 9
Council Bluffs 9
Duncan 9
Guayaquil 9
Totale 10.391
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Nome #
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses 423
Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons 217
Destructive events in NAND Flash memories irradiated with heavy ions 173
Radiation and particle effects on avionics induced by Terrestrial Gamma-Ray Flashes 164
Neutron-Induced Upsets in NAND Floating Gate Memories 158
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories? 156
Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications 156
Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence 155
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 152
Error Instability in Floating Gate Flash Memories Exposed to TID 150
Increase in the Heavy-ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID 148
Possible effects on avionics induced by Terrestrial Gamma-Ray Flashes 147
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions 146
Impact of NBTI Aging on the Single Event Upset of SRAM Cells 146
Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions 145
Single Phase Clock Based Radiation Tolerant D Flip-flop Circuit 144
Effects of Ionizing Radiation in Flash Memories 143
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 140
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells 139
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 139
Neutron-induced soft errors in advanced Flash memories 138
A Study on the Short- and Long-Term Effects of X-Ray Exposure on NAND Flash Memories 138
Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays 137
A Multi-Megarad, Radiation Hardened by Design 512 kbit SRAM in CMOS Technology 136
TID sensitivity of NAND Flash memory building blocks 135
Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions 134
Radiation Effects in NAND Flash Memories 133
Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad 133
65 nm technology for HEP: Status and perspective 132
Sensitivity of NOR Flash memories to wide-energy spectrum neutrons during accelerated tests 131
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors 130
Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories 129
Total Ionizing Dose Effects in 3-D NAND Flash Memories 129
Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses 129
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells 127
Proton-Induced Upsets in 41-nm NAND Floating Gate Cells 126
Analysis of TID failure modes in SRAM-based FPGA based on gamma-ray and synchrotron X-ray irradiation 125
CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments 125
TID Sensitivity of NAND Flash Memory Building Blocks 124
Atmospheric Neutron Soft Errors in 3D NAND Flash Memories 123
Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories 122
Single Event Effects in 90-nm Phase Change Memories 121
Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications 121
Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells 120
Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation 120
Nuclear physics midterm plan at Legnaro National Laboratories (LNL) 118
Impact of total dose on heavy-ion upsets in floating gate arrays 118
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 115
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 115
A Heavy-Ion Detector Based on 3-D NAND Flash Memories 115
Ionizing radiation compatibility in the MITICA neutral beam prototype 114
Investigation of Supply Current Spikes in Flash Memories Using Ion-Electron Emission Microscopy 113
Radiation environment in the ITER neutral beam injector prototype 113
Proton irradiation effects on commercial laser diodes 112
Degradation of Sub 40-nm NAND Flash Memories Under Total Dose Irradiation 111
SEE tests of the NAND flash radiation tolerant intelligent memory stack 111
A new hardware/software platform and a new 1/E neutron source for soft error studies: Testing FPGAs at the ISIS facility 110
Sample-to-Sample Variability of Floating Gate Errors Due to Total Ionizing Dose 109
Space and terrestrial radiation effects in flash memories 109
Experimental and Simulation Study of the Effects of Heavy-ion Irradiation on HfO2-based RRAM Cells 109
Design implementation and test results of the RD53A, a 65 nm large scale chip for next generation pixel detectors at the HL-LHC 109
Muon-induced soft errors in 16-nm NAND flash memories 109
Total Suppression of Dynamic-Ron in AlGaN/GaN-HEMTs Through Proton Irradiation 108
Soft errors in floating gate memory cells: A review 108
Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs 108
Effects of high energy x ray and proton irradiation on lead zirconate titanate thin films' dielectric and piezoelectric response 107
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 107
Radiation Environment in the ITER Neutral Beam Injector Prototype 106
Single and Multiple Cell Upsets in 25-nm NAND Flash Memories 106
Total Ionizing Dose Effects in Si-Based Tunnel FETs 105
Space Environment Effects on Flexible, Low-Voltage Organic Thin-Film Transistors 105
A low cost robust radiation hardened flip-flop circuit 105
Factors impacting the temperature dependence of soft errors in commercial SRAMs 103
Proton-Induced Upsets in SLC and MLC NAND Flash Memories 100
Upsets in Phase Change Memories Due to High-LET Heavy Ions Impinging at an Angle 99
Radiation vulnerability in 65 nm CMOS I/O transistors after exposure to grad dose 99
Neutron and alpha ser in advanced NAND Flash memories 99
Annealing of heavy-ion induced floating gate errors: LET and feature size dependence 99
Proton-induced upsets in 41-nm NAND floating gate cells 98
Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories 98
Neutron and Alpha Single Event Upsets in Advanced NAND Flash Memories 97
Effects of bias on the radiation responses of Si-based TFETs 97
Drain Current Collapse in 65 nm pMOS Transistors After Exposure to Grad Dose 97
RD53A: a large scale prototype for HL-LHC silicon pixel detector phase 2 upgrades 97
Alpha-induced soft errors in Floating Gate flash memories 96
Radiation Effects in Flash Memories 96
Simulation and Experiment in Neutron Induced Single Event Effects in SRAM 96
Effects of high-energy electrons in advanced NAND flash memories 95
Atmospheric-like neutron attenuation during accelerated neutron testing with multiple printed circuit boards 95
Single Event Effects in 3D NAND Flash Memory Cells with Replacement Gate Technology 95
Upsets in Erased Floating Gate Cells with High-Energy Protons 94
Complete loss of functionality and permanent page fails in NAND flash memories 94
Heavy-ion induced single event upsets in phase-change memories 93
Impact of Heavy-Ion Strikes on Minimum-Size MOSFETs With Ultra-Thin Gate Oxide 91
Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors 91
Effects of electrical stress and ionizing radiation on Si-based TFETs 90
Sensitive Volume and Extreme Shifts in Floating Gate Cells Irradiated with Heavy Ions 90
Heavy-ion upset immunity of RRAM cells based on thin HfO2layers 89
Test results and prospects for RD53A, a large scale 65 nm CMOS chip for pixel readout at the HL-LHC 87
Heavy-Ion Induced Threshold Voltage Shifts in Sub 70-nm Charge-Trap Memory Cells 86
Totale 12.195
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Categoria #
all - tutte 49.316
article - articoli 32.168
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.146
Totale 82.630
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.088 0 0 78 126 30 77 70 136 197 90 184 100
2021/20221.714 34 193 304 108 80 43 83 212 88 34 163 372
2022/20231.027 214 25 41 102 169 106 39 80 90 12 84 65
2023/2024760 58 108 94 81 53 51 27 27 20 90 81 70
2024/20252.601 15 160 89 101 309 79 106 222 181 130 490 719
2025/20262.583 384 1.163 1.036 0 0 0 0 0 0 0 0 0
Totale 14.672