GaN-based High Electron Mobility Transistors (HEMTs) have shown to be affected by DC to RF drain current collapse which limits the output power density at microwave frequencies. The surface passivation can reduce these detrimental effects [1] but recently low current dispersion has been demonstrated even on unpassivated devices [2-3]. We report on unpassivated GaN/AlGaN/GaN HEMTs grown on SiC substrate both with intentionally undoped and doped structures: extremely weak drain current collapse in the order of few percent even for 50ns pulses was obtained by means of turn-on gate-lag measurements
Unpassivated GaN/AlGaN/GaN HEMTs with very low DC to RF drain current dispersion
PIEROBON, ROBERTO;RAMPAZZO, FABIANA;CORRADINI, LUCA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2004
Abstract
GaN-based High Electron Mobility Transistors (HEMTs) have shown to be affected by DC to RF drain current collapse which limits the output power density at microwave frequencies. The surface passivation can reduce these detrimental effects [1] but recently low current dispersion has been demonstrated even on unpassivated devices [2-3]. We report on unpassivated GaN/AlGaN/GaN HEMTs grown on SiC substrate both with intentionally undoped and doped structures: extremely weak drain current collapse in the order of few percent even for 50ns pulses was obtained by means of turn-on gate-lag measurements
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