In this paper we present the correlation between the impact ionization gate current with the S22 scattering parameter measured in the 50 MHz - 6 GHz frequency range in InAlAs/InGaAs/InP HEMTs. Devices with shorter gate length presenting larger I.I. gate current have shown larger inductive component in the output admittance Y22 at low frequencies.
Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm
PIEROBON, ROBERTO;RAMPAZZO, FABIANA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2004
Abstract
In this paper we present the correlation between the impact ionization gate current with the S22 scattering parameter measured in the 50 MHz - 6 GHz frequency range in InAlAs/InGaAs/InP HEMTs. Devices with shorter gate length presenting larger I.I. gate current have shown larger inductive component in the output admittance Y22 at low frequencies.
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