MODOLO, NICOLA
 Distribuzione geografica
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Continente #
EU - Europa 642
NA - Nord America 536
AS - Asia 335
OC - Oceania 1
SA - Sud America 1
Totale 1.515
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Nazione #
US - Stati Uniti d'America 533
IE - Irlanda 309
IT - Italia 155
CN - Cina 84
IN - India 77
TW - Taiwan 69
SG - Singapore 48
DE - Germania 35
FR - Francia 31
AT - Austria 28
GB - Regno Unito 23
JP - Giappone 20
HK - Hong Kong 19
NL - Olanda 18
BE - Belgio 14
FI - Finlandia 10
ID - Indonesia 9
DK - Danimarca 6
SK - Slovacchia (Repubblica Slovacca) 6
KR - Corea 5
CH - Svizzera 3
CA - Canada 2
GR - Grecia 2
IL - Israele 2
CO - Colombia 1
MX - Messico 1
MY - Malesia 1
NZ - Nuova Zelanda 1
OM - Oman 1
PL - Polonia 1
SE - Svezia 1
Totale 1.515
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Città #
Dublin 307
Fairfield 81
Padova 68
Ashburn 48
Hsinchu 43
Houston 33
Santa Clara 32
Boardman 31
Singapore 31
Cambridge 30
Woodbridge 28
Mumbai 25
Beijing 24
Seattle 24
Guangzhou 23
Chandler 19
Los Angeles 18
Villach 17
San Diego 16
Bengaluru 14
Wilmington 13
Medford 12
Princeton 12
Nijmegen 10
Vienna 10
London 9
Ma On Shan 9
Blaustein 8
Des Moines 8
Helsinki 8
Kanpur 8
Stuttgart 8
Ann Arbor 7
Chennai 7
Delhi 7
Sarcedo 7
Taichung 7
Tokyo 7
Dallas 6
Grenoble 6
Milan 6
Patna 6
Rome 6
Turin 6
Central 5
Frankfurt am Main 5
Galliate Lombardo 5
Hong Kong 5
New Taipei City 5
Roermond 5
Sala Baganza 5
Taipei 5
Cagliari 4
Carrollton 4
Cesena 4
Higashimukōjima 4
Kermt 4
Legnago 4
McKinney 4
New York 4
Washington 4
Zhubei 4
Agordo 3
Albuquerque 3
Azzano Decimo 3
Bologna 3
Boretto 3
Bratislava 3
Cabiate 3
Coventry 3
Genk 3
New Delhi 3
Odawara 3
Odense 3
Ogden 3
San Ramon 3
Shanghai 3
Vedbaek 3
Yangmei District 3
Apeldoorn 2
Brussels 2
Dayton 2
Dongguan 2
Eschbach 2
Fisciano 2
Haifa 2
Hsinchu County 2
Kulu 2
Lappeenranta 2
Leuven 2
Mangalore 2
Marseille 2
Munchenstein 2
Munich 2
Norwalk 2
Paris 2
Pezinok 2
Regensburg 2
Rimini 2
Salerno 2
Totale 1.278
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Nome #
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 285
Distributed Trap Levels and Hot-Electron Trapping in Power GaN HEMTs Characterization and Modeling 186
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 87
Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices 74
A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs 64
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 58
Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation 55
A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level 54
Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress 53
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier 50
Trap parameter extraction and compact modeling of non-ideal dynamic performance in AlGaN/GaN HEMTs 48
Novel models for the analysis of the dynamic performance of wide bandgap devices 46
Hot electron effects in AlGaN/GaN HEMTs during hard-switching events 43
Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors 41
Physics-based trap analysis and compact modeling performance evaluation of AlGaN/GaN HEMTs 39
Understanding γ-Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model 38
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs 35
Physics-based extraction of trap distribution in AlGaN/GaN HEMTs from stretched exponentials 32
Charge trapping in GaN Power Transistors: Challenges and Perspectives 32
Review on the degradation of GaN-based lateral power transistors 30
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier 28
Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs 28
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress 28
Defect States Extraction from Stretched Exponential (de)trapping Response 27
Dynamic performance of wide bandgap devices 24
Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultra-Fast (10V/ns) on-Wafer Methodology 22
Modeling Hot-Electron Trapping in GaN-based HEMTs 20
Positive VTH Shift in Schottky p-GaN Gate Power HEMTs: Dependence on Temperature, Bias and Gate Leakage 8
Trap-state mapping to model GaN transistors dynamic performance 6
Totale 1.541
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Categoria #
all - tutte 7.543
article - articoli 4.639
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 12.182
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202018 0 0 0 0 0 0 0 0 10 4 0 4
2020/2021138 7 4 10 4 2 0 42 10 16 12 4 27
2021/2022143 15 6 4 1 4 15 22 15 9 10 18 24
2022/2023361 18 0 7 7 29 15 75 44 46 14 45 61
2023/2024672 72 89 81 47 59 62 35 56 48 57 30 36
2024/2025209 15 34 37 54 69 0 0 0 0 0 0 0
Totale 1.541