BERTI, MARINA
BERTI, MARINA
'Experimental Evidence of 2D-3D transition in the Stranski-Krastanow coherent growth'
1997 Berti, Marina; Drigo, Antonio; Rossetto, G.; Torzo, G.
12C(a,a)12C resonant elastic scattering at 5.72 MeV as a tool for carbon quantification in Silicon-based heterostructures
1998 Berti, Marina; DE SALVADOR, Davide; Drigo, Antonio; A., Sambo; S., Zerlauth; J., Stangl; G., Bauer; F., Schaffler
12C(α,α)12C resonant elastic scattering at 5.7 MeV as a tool for carbon quantification in silicon-based heterostructures
1998 Berti, Marina; DE SALVADOR, Davide; Drigo, Antonio; Romanato, Filippo; A., Sambo; S., Zerlauth; J., Stangl; F., Schäffler; G., Bauer
A systematic investigation of strain relaxation, surface morphology and defects in tensile and compressive InGaAs/InP layers
2000 Ferrari, C.; Lazzarini, L.; Salviati, G.; Natali, M.; Berti, Marina; DE SALVADOR, Davide; Drigo, Antonio; Rossetto, G.; Torzo, G.
Assessment of Vegard's law validity in the Ga1-xAlxSb/GaSb epitaxial System
1999 Germini, F.; Bocchi, C.; Ferrari, C.; Franchi, S.; Baraldi, A.; Magnanini, R.; DE SALVADOR, Davide; Berti, Marina; Drigo, Antonio
Behaviour of metastable Si/sub 1 y/C/sub y/ epilayers under 2 MeV alpha particles irradiation
1999 Berti, Marina; DE SALVADOR, Davide; Drigo, Antonio; Stangl, J.; Schaffler, F.; Zerlauth, S.; Bauer, G.
Behaviour of metastable si1-yCy epilayers under 2 MeV alpha particles irradiation
1999 Berti, Marina; DE SALVADOR, Davide; Drigo, Antonio; Stangl, J; Schaffler, F; Zerlauth, S; Bauer, G.
Bond-length variation in InxGa1-xAs/InP strained epitaxial layers
1998 Romanato, Filippo; DE SALVADOR, Davide; Berti, Marina; Drigo, Antonio; M., Natali; M., Tormen; G., Rossetto; S., Pascarelli; F., Boscherini; C., Lamberti; S., Mobilio
Bond-length variation in InxGa1-xAs/InP strained epitaxial layers (vol 57, pg 14 619, 1998)
1998 Romanato, Filippo; DE SALVADOR, Davide; Berti, Marina; Drigo, Antonio; M., Natali; M., Tormen; G., Rossetto; S., Pascarelli; F., Boscherini; C., Lamberti; S., Mobilio
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain
2004 Bisognin, Gabriele; DE SALVADOR, Davide; Napolitani, Enrico; Aldegheri, L; Berti, Marina; Carnera, Alberto; Drigo, Antonio; Mirabella, S; Bruno, E; Impellizzeri, G; Priolo, F.
Broad-area optical characterization of well-width homogeneity inGaN/AlxGa1-xN multiple quantum wells grown on sapphire wafers
2000 Pomarico, A.; Lomascolo, M.; Passaseo, A.; Cingolani, R.; Berti, Marina; Napolitani, Enrico; Natali, M.; Sinha, S. K.; Drigo, Antonio
Carbon diffusion and clustering in SiGeC layers under thermal oxidation
2001 DE SALVADOR, Davide; Napolitani, Enrico; Coati, A.; Berti, Marina; Drigo, Antonio; Carroll, M.; Sturm, J. C.; Stangl, J.; Bauer, G.; Lazzarini, L.
Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection
2002 DE SALVADOR, Davide; Coati, A; Napolitani, Enrico; Berti, Marina; Drigo, Antonio; Carroll, Ms; Sturm, Jc; Stangl, J; Bauer, G; Lazzarini, L.
Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDsGallium Nitride Materials and Devices VIII
2013 Meneghini, Matteo; Trivellin, Nicola; Berti, Marina; Cesca, Tiziana; Gasparotto, Andrea; A., Vinattieri; F., Bogani; D., Zhu; C. J., Humphreys; Meneghesso, Gaudenzio; Zanoni, Enrico
Channeling effects in high energy ion implantation: Si(N)
1993 Berti, Marina; Brusatin, Giovanna; Carnera, Alberto; Gasparotto, Andrea
Charge storage and screening of the internal field in GaN/AlGaN quantum wells
2001 Traetta, G.; DI CARLO, A.; Reale, A.; Lugli, P.; Lomascolo, M.; Passaseo, A.; Cingolani, R.; Bonfiglio, A.; Berti, Marina; Napolitani, Enrico; Natali, M.; Sinha, S. K.; Drigo, Antonio
Composition and structure of Si-Ge layers produced by ion implantation and laser melting
1991 Berti, Marina; G., Mazzi; L., Calcagnile; Drigo, Antonio; P. G., Merli; A., Migliori
Composition control of GaSbAs alloys
1999 A., Bosacchi; S., Franchi; P., Allegri; V., Avanzini; A., Baraldi; R., Magnanini; Berti, Marina; DE SALVADOR, Davide; S. K., Sinha
Correlation between defects, residual strain and morphology in continuously graded InGaAs/GaAs buffers
1997 L., Lazzarini; C., Ferrari; S., Gennari; A., Bosacchi; S., Franchi; Berti, Marina; Drigo, Antonio; Romanato, Filippo; G., Salviati
Crack formation in tensile InGaAS/InP layers
2000 Natali, M.; DE SALVADOR, Davide; Berti, Marina; Drigo, Antonio; Lazzarini, L.; Salviati, G.; Rossetto, G.; Torzo, G.