The localization of voids in thin Si1−xGex layers after He+ implantation and thermal annealing is reported. A Si/ Si1−xGex multilayer grown onto 001 Si was implanted with He+ in the 10−30 keV range, with fluences from 71015 up to 11016 cm−2, and annealed at 800 °C for 1 h. Samples were analyzed by transmission electron microscopy, showing void formation only within the two layers containing Ge or at the film/substrate interface. Our results support the idea that the compressive strain in the Si1−xGex layers induces the nucleation of small cavities and the growth of voids by a mechanism where vacancies are stabilized by He.
Localization of He induced nanovoids in buried Si1-xGex thin films
BISOGNIN, GABRIELE;BERTI, MARINA
2008
Abstract
The localization of voids in thin Si1−xGex layers after He+ implantation and thermal annealing is reported. A Si/ Si1−xGex multilayer grown onto 001 Si was implanted with He+ in the 10−30 keV range, with fluences from 71015 up to 11016 cm−2, and annealed at 800 °C for 1 h. Samples were analyzed by transmission electron microscopy, showing void formation only within the two layers containing Ge or at the film/substrate interface. Our results support the idea that the compressive strain in the Si1−xGex layers induces the nucleation of small cavities and the growth of voids by a mechanism where vacancies are stabilized by He.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
