Materials and structures for microelectronics are characterized by a continuous decrease of their dimensions. Nanostructured materials are currently required to design and produce novel devices. We will show that, in spite of their relatively poor lateral resolution, selected nuclear reactions or ad-hoc studied resonances in the elastic cross section of alpha particles, in random and channelling configuration, can accurately quantify and provide the lattice location of different light elements in various semiconductor matrices. Different systems of current interest will be described. Moreover physical results obtained by combining nuclear reactions with Rutherford BackScattering (RBS), High Resolution X-Ray Diffraction (HRXRD) and Secondary Ion Mass Spectrometry (SIMS) analysis will be discussed. In particular the relation between the lattice parameter and the light impurity concentration in the case of Si-C ,Si-Ge-C ,Ga-As-N-(In) dilute alloys and of B-doped silicon will be described. We will also show some results on hydrogenated (deuterated) dilute nitrides.
Structural characterization of light elements in semiconductor materials by means of selected nuclear reactions
BERTI, MARINA;BISOGNIN, GABRIELE;DE SALVADOR, DAVIDE;NAPOLITANI, ENRICO
2008
Abstract
Materials and structures for microelectronics are characterized by a continuous decrease of their dimensions. Nanostructured materials are currently required to design and produce novel devices. We will show that, in spite of their relatively poor lateral resolution, selected nuclear reactions or ad-hoc studied resonances in the elastic cross section of alpha particles, in random and channelling configuration, can accurately quantify and provide the lattice location of different light elements in various semiconductor matrices. Different systems of current interest will be described. Moreover physical results obtained by combining nuclear reactions with Rutherford BackScattering (RBS), High Resolution X-Ray Diffraction (HRXRD) and Secondary Ion Mass Spectrometry (SIMS) analysis will be discussed. In particular the relation between the lattice parameter and the light impurity concentration in the case of Si-C ,Si-Ge-C ,Ga-As-N-(In) dilute alloys and of B-doped silicon will be described. We will also show some results on hydrogenated (deuterated) dilute nitrides.
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