The lattice strain induced both by substitutional and clustered B in B-implanted Ge samples has been investigated by means of high resolution x-ray diffraction HRXRD. The main results can be summarized as follows: while substitutional i.e., electrically active B exhibits a negative strain, clustered i.e., electrically inactive B reverses the lattice strain from negative to positive values, the latter being much higher with respect to those found for clustered B in Si. In particular, the lattice volume modification for each B atom V induced by substitutional VSub and clustered VCl B is VSub=−12.4 Å3 and VCl=+14.8 Å3, respectively. These unexpected results demonstrate the ability of HRXRD to quantitatively detect the amount of electrically inactive and active B.
Substitutional and clustered B in ion implanted Ge: Strain determination
BISOGNIN, GABRIELE;BERTI, MARINA;
2010
Abstract
The lattice strain induced both by substitutional and clustered B in B-implanted Ge samples has been investigated by means of high resolution x-ray diffraction HRXRD. The main results can be summarized as follows: while substitutional i.e., electrically active B exhibits a negative strain, clustered i.e., electrically inactive B reverses the lattice strain from negative to positive values, the latter being much higher with respect to those found for clustered B in Si. In particular, the lattice volume modification for each B atom V induced by substitutional VSub and clustered VCl B is VSub=−12.4 Å3 and VCl=+14.8 Å3, respectively. These unexpected results demonstrate the ability of HRXRD to quantitatively detect the amount of electrically inactive and active B.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
