BISOGNIN, GABRIELE
BISOGNIN, GABRIELE
Role of ion mass on damage accumulation during ion implantation in Ge
2014 Napolitani, Enrico; E., Bruno; Bisognin, Gabriele; Mastromatteo, Massimo; DE SALVADOR, Davide; G. G., Scapellato; S., Boninelli; F., Priolo; V., Privitera; Carnera, Alberto
On the Strain Induced by Arsenic into Silicon
2013 Koffel, Stephane; Pichler, Peter; Lorenz, Juergen; Bisognin, Gabriele; Napolitani, Enrico; DE SALVADOR, Davide
Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs_{1−y}N_{y} alloys: Role of N-H_{n} centers with n>2 and their thermal stability
2012 L., Wen; M., Stavola; W., Fowler; R., Trotta; A., Polimeni; M., Capizzi; Bisognin, Gabriele; Berti, Marina; S., Rubini; F., Martelli
Boron diffusion in extrinsically doped crystalline silicon
2010 DE SALVADOR, Davide; Napolitani, Enrico; Bisognin, Gabriele; Pesce, M; Carnera, Alberto; Bruno, E; Impellizzeri, G; Mirabella, S.
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution
2010 Bisognin, Gabriele; S., Vangelista; Mastromatteo, Massimo; Napolitani, Enrico; DE SALVADOR, Davide; Carnera, Alberto; Berti, Marina; E., Bruno; G., Scapellato; A., Terrasi
Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si
2010 Mastromatteo, Massimo; DE SALVADOR, Davide; Napolitani, Enrico; Panciera, F; Bisognin, Gabriele; Carnera, Alberto; Impellizzeri, G; Mirabella, S; Priolo, F.
High-level incorporation of antimony in germanium by laser annealing
2010 Bruno, E; Scapellato, Gg; Bisognin, Gabriele; Carria, E; Romano, L; Carnera, Alberto; Priolo, F.
Ion beam characterization of Fe implanted GaN
2010 Gasparotto, Andrea; Cesca, Tiziana; Bisognin, Gabriele; Vangelista, Silvia; Berti, Marina
Recent Insights in the Diffusion of Boron in Silicon and Germanium
2010 S., Mirabella; DE SALVADOR, Davide; E., Bruno; Napolitani, Enrico; G. G., Scapellato; Mastromatteo, Massimo; G., Impellizzeri; Bisognin, Gabriele; S., Boninelli; A., Terrasi; Carnera, Alberto; F., Priolo
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping
2010 Berbezier, I.; Ayoub, J. P.; Ronda, A.; Oehme, M.; Lyutovich, K.; Kasper, E.; DI MARINO, Marco; Bisognin, Gabriele; Napolitani, Enrico; Berti, Marina
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping
2010 Berbezier, I; Ayoub, Jp; Ronda, A; Oehme, M; Lyutovich, K; Kasper, E; DI MARINO, M; Bisognin, Gabriele; Napolitani, E; Berti, Marina
Substitutional and clustered B in ion implanted Ge: Strain determination
2010 Bisognin, Gabriele; S., Vangelista; Berti, Marina; G., Impellizzeri; M. G., Grimaldi
Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge
2010 Napolitani, Enrico; Bisognin, Gabriele; Bruno, E; Mastromatteo, Massimo; Scapellato, Gg; Boninelli, S; DE SALVADOR, Davide; Mirabella, S; Spinella, C; Carnera, Alberto; Priolo, F.
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si
2009 DE SALVADOR, Davide; Bisognin, Gabriele; Napolitani, Enrico; Mastromatteo, Massimo; Baggio, N; Carnera, Alberto; Boscherini, F; Impellizzeri, G; Mirabella, S; Boninelli, S; Priolo, F; Cristiano, F.
Hydrogen diffusion in GaAs1-xNx
2009 Trotta, R; Giubertoni, D; Polimeni, A; Bersani, M; Capizzi, M; Martelli, F; Rubini, S; Bisognin, Gabriele; Berti, Marina
Local structure of nitrogen-hydrogen complexes in dilute nitrides
2009 Ciatto, G; Boscherini, F; Bonapasta, Aa; Filippone, F; Polimeni, A; Capizzi, M; Berti, Marina; Bisognin, Gabriele; DE SALVADOR, Davide; Floreano, L; Martelli, F; Rubini, S; Grenouillet, L.
Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation
2009 Di, Zf; Wang, Yq; Nastasi, M; Bisognin, Gabriele; Berti, Marina; Thompson, Pe
B clustering in amorphous Si
2008 DE SALVADOR, Davide; Bisognin, Gabriele; DI MARINO, Marco; Napolitani, Enrico; Carnera, Alberto; Mirabella, S; Pecora, E; Bruno, E; Priolo, F; Graoui, H; Foad, Ma; Boscherini, F.
Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN.H heterostructures
2008 Trotta, R; Polimeni, A; Capizzi, M; Giubertoni, D; Bersani, M; Bisognin, Gabriele; Berti, Marina; Rubini, S; Martelli, F; Mariucci, L; Francardi, M; Gerardino, A.
Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon
2008 DE SALVADOR, Davide; Napolitani, Enrico; Mirabella, S; Bruno, E; Impellizzeri, G; Bisognin, Gabriele; Pecora, Ef; Priolo, F; Carnera, Alberto