GRIFFONI, ALESSIO

GRIFFONI, ALESSIO  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 2009 GRIFFONI, ALESSIOGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures 2011 GRIFFONI, ALESSIOTAZZOLI, AUGUSTOPACCAGNELLA, ALESSANDROMENEGHESSO, GAUDENZIO + - - IEW2011, 2011 International Electrostatic Discharge Workshop
An Insight into the Parasitic Capacitances of SOI and Bulk FinFET Devices 2009 GRIFFONI, ALESSIOMENEGHESSO, GAUDENZIO + - - -
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 2010 GRIFFONI, ALESSIOGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Angular and strain dependence of heavy-ions induced degradation in SOI FinFETs2009 European Conference on Radiation and Its Effects on Components and Systems 2009 GRIFFONI, ALESSIOGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + - - Proceedings of 2009 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009
Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 2008 GRIFFONI, ALESSIOSILVESTRI, MARCOGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + - - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS 2008
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 2009 GRIFFONI, ALESSIOSILVESTRI, MARCOGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs 2010 GRIFFONI, ALESSIOMENEGHESSO, GAUDENZIO + IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -
Electrostatic Discharge Effects In Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques 2008 GRIFFONI, ALESSIOTAZZOLI, AUGUSTOGERARDIN, SIMONEMENEGHESSO, GAUDENZIO + - - ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS - 2008
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide 2007 GERARDIN, SIMONEGRIFFONI, ALESSIOTAZZOLI, AUGUSTOCESTER, ANDREAMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO - - 44th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2007
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 2007 CESTER, ANDREATAZZOLI, AUGUSTOGRIFFONI, ALESSIOMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + - - -
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 2007 GERARDIN, SIMONEGRIFFONI, ALESSIOTAZZOLI, AUGUSTOCESTER, ANDREAMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
ESD and Ionizing Radiation Effects on Ultrathin Body SOI and Multiple Gate Technologies 2010 Griffoni, Alessio - - -
ESD Constraints of Bulk FinFET in Comparison with SOI FinFET Structures 2009 GRIFFONI, ALESSIOMENEGHESSO, GAUDENZIO + - - -
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 2008 GRIFFONI, ALESSIOTAZZOLI, AUGUSTOGERARDIN, SIMONEMENEGHESSO, GAUDENZIO + - - 2nd International Electrostatic Discharge Workshop IEW 2008
Impact of radiation on the operation and reliability of deep submicron CMOS 2010 GRIFFONI, ALESSIOCESTER, ANDREAGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + ECS TRANSACTIONS - -
Impact of radiation on the operation and reliability of deep submicron CMOS 2010 GRIFFONI, ALESSIOCESTER, ANDREAMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + - - -
Impact of Strain on ESD Robustness of FinFET Devices 2008 GRIFFONI, ALESSIOMENEGHESSO, GAUDENZIO + - - -
Ionizing Radiation Effects on Advanced CMOS Devices and on ESD Protection Structures for CMOS Technology 2008 GRIFFONI, ALESSIOMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO - - -
Microdose and Breakdown Effects Induced by Heavy Ions on sub 20-nm Triple-Gate SOI FETs 2008 GRIFFONI, ALESSIOMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + - - -