In this work, we studied the impact of heavy-ion strikes on triple-gate SOI FETs manufactured in a sub 20-nm technology, analyzing the role of the geometry and LET.
Microdose and Breakdown Effects Induced by Heavy Ions on sub 20-nm Triple-Gate SOI FETs
GRIFFONI, ALESSIO;MENEGHESSO, GAUDENZIO;PACCAGNELLA, ALESSANDRO;
2008
Abstract
In this work, we studied the impact of heavy-ion strikes on triple-gate SOI FETs manufactured in a sub 20-nm technology, analyzing the role of the geometry and LET.
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