We present an insight into the parasitic capacitances of one of the most advanced silicon device available today: the FinFET. The performance of bulk FinFET gated diodes is evaluated and compared to SOI, highlighting the role of device geometry and three-dimensional architecture
An Insight into the Parasitic Capacitances of SOI and Bulk FinFET Devices
GRIFFONI, ALESSIO;MENEGHESSO, GAUDENZIO
2009
Abstract
We present an insight into the parasitic capacitances of one of the most advanced silicon device available today: the FinFET. The performance of bulk FinFET gated diodes is evaluated and compared to SOI, highlighting the role of device geometry and three-dimensional architecture
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