MARCUZZI, ALBERTO
 Distribuzione geografica
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Continente #
EU - Europa 418
AS - Asia 380
NA - Nord America 228
SA - Sud America 75
AF - Africa 43
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 6
Totale 1.157
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Nazione #
US - Stati Uniti d'America 195
IT - Italia 190
SG - Singapore 104
CN - Cina 75
BR - Brasile 53
HK - Hong Kong 48
DE - Germania 44
PL - Polonia 32
KR - Corea 31
GB - Regno Unito 26
NL - Olanda 20
TW - Taiwan 20
IN - India 17
JP - Giappone 17
VN - Vietnam 14
CH - Svizzera 13
FI - Finlandia 11
FR - Francia 10
AT - Austria 9
RU - Federazione Russa 6
XK - ???statistics.table.value.countryCode.XK??? 6
BE - Belgio 5
CL - Cile 5
DO - Repubblica Dominicana 5
IE - Irlanda 5
TH - Thailandia 5
AF - Afghanistan, Repubblica islamica di 4
AR - Argentina 4
BZ - Belize 4
CY - Cipro 4
HN - Honduras 4
IL - Israele 4
IQ - Iraq 4
LU - Lussemburgo 4
RO - Romania 4
SK - Slovacchia (Repubblica Slovacca) 4
AD - Andorra 3
AL - Albania 3
BS - Bahamas 3
BY - Bielorussia 3
EE - Estonia 3
ES - Italia 3
GH - Ghana 3
HT - Haiti 3
JM - Giamaica 3
KG - Kirghizistan 3
MA - Marocco 3
MN - Mongolia 3
MY - Malesia 3
NC - Nuova Caledonia 3
SA - Arabia Saudita 3
TR - Turchia 3
AE - Emirati Arabi Uniti 2
AO - Angola 2
BA - Bosnia-Erzegovina 2
BD - Bangladesh 2
BO - Bolivia 2
BW - Botswana 2
CG - Congo 2
CI - Costa d'Avorio 2
CO - Colombia 2
CU - Cuba 2
CV - Capo Verde 2
CZ - Repubblica Ceca 2
EC - Ecuador 2
GE - Georgia 2
GT - Guatemala 2
LV - Lettonia 2
ME - Montenegro 2
MR - Mauritania 2
MX - Messico 2
PE - Perù 2
PR - Porto Rico 2
PY - Paraguay 2
SE - Svezia 2
SI - Slovenia 2
SN - Senegal 2
SO - Somalia 2
TN - Tunisia 2
UA - Ucraina 2
ZA - Sudafrica 2
ZW - Zimbabwe 2
AM - Armenia 1
AU - Australia 1
BB - Barbados 1
CD - Congo 1
CW - ???statistics.table.value.countryCode.CW??? 1
DZ - Algeria 1
EG - Egitto 1
ET - Etiopia 1
GA - Gabon 1
GN - Guinea 1
GR - Grecia 1
HR - Croazia 1
HU - Ungheria 1
ID - Indonesia 1
IS - Islanda 1
KE - Kenya 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
Totale 1.132
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Città #
Singapore 70
Padova 47
Santa Clara 45
Hong Kong 43
Ashburn 41
Bytom 27
Milan 26
Munich 22
Padua 18
Riese Pio X 16
Guangzhou 14
Beijing 13
Boardman 13
Hefei 13
Zurich 12
Dongjak-gu 9
Bengaluru 7
Catania 7
Ho Chi Minh City 7
São Paulo 7
Yongin-si 7
Frankfurt am Main 6
Los Angeles 6
Naples 6
Nuremberg 6
Pristina 6
Rome 6
Yangmei District 6
Lappeenranta 5
Reggello 5
Sarcedo 5
Tappahannock 5
Turku 5
Azzano Decimo 4
Bangkok 4
Bologna 4
Bristol 4
Cambridge 4
Hanoi 4
Modena 4
Parma 4
Seoul 4
Tokyo 4
Villeurbanne 4
Warsaw 4
Accra 3
Atlanta 3
Baghdad 3
Bishkek 3
Brasília 3
Bratislava 3
Campinas 3
Chiswick 3
Dublin 3
Fossò 3
Hsinchu 3
Melito di Napoli 3
Minsk 3
Montego Bay 3
Nassau 3
Noumea 3
Rio de Janeiro 3
Sala Baganza 3
Shanghai 3
Stanford 3
Taichung 3
Ulan Bator 3
Vienna 3
Abidjan 2
Andorra la Vella 2
Apex 2
Arzignano 2
Birmingham 2
Boston 2
Brazzaville 2
Casablanca 2
Clonakilty 2
Council Bluffs 2
Coventry 2
Da Nang 2
Dakar 2
Dallas 2
Dalmine 2
Dubai 2
Foshan 2
Gaithersburg 2
Genoa 2
Halfweg 2
Harare 2
Havana 2
Kolkata 2
Leigh 2
Leuven 2
Limassol 2
Luanda 2
Narva 2
New Taipei 2
Nottingham 2
Nouakchott 2
Port-au-Prince 2
Totale 712
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Nome #
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 142
Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling 124
A Review of SiC Commercial Devices for Automotive: Properties and Challenges 108
GaN Vertical Devices: challenges for high performance and stability 98
Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements 85
Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques 85
GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives 82
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs 72
Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements 64
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress 60
Threshold voltage variation of SiC trench MOSFETs during TDDB stress 57
Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements 57
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors 55
Interface-related VTH shift of SiC MOSFETs during constant current stress extracted from charge pumping measurements 51
Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC 39
Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current Stress 4
Totale 1.183
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Categoria #
all - tutte 3.698
article - articoli 1.309
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.007
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/20232 0 0 0 0 0 0 0 0 1 0 1 0
2023/2024210 0 7 34 52 7 16 25 12 17 5 19 16
2024/2025557 10 40 23 53 54 50 34 35 22 28 87 121
2025/2026414 129 133 152 0 0 0 0 0 0 0 0 0
Totale 1.183