MARCUZZI, ALBERTO
 Distribuzione geografica
Continente #
EU - Europa 136
AS - Asia 117
NA - Nord America 49
Totale 302
Nazione #
IT - Italia 76
US - Stati Uniti d'America 49
CN - Cina 34
SG - Singapore 30
GB - Regno Unito 19
KR - Corea 17
TW - Taiwan 16
DE - Germania 14
JP - Giappone 10
CH - Svizzera 9
IN - India 5
BE - Belgio 4
FI - Finlandia 4
FR - Francia 4
HK - Hong Kong 3
BY - Bielorussia 2
NL - Olanda 2
TH - Thailandia 2
IE - Irlanda 1
SI - Slovenia 1
Totale 302
Città #
Padova 31
Singapore 26
Dongjak-gu 9
Zurich 9
Ashburn 7
Beijing 7
Yongin-si 7
Frankfurt am Main 6
Santa Clara 6
Yangmei District 6
Sarcedo 5
Tappahannock 5
Azzano Decimo 4
Bristol 4
Cambridge 4
Lappeenranta 4
Milan 4
Modena 4
Naples 4
Parma 4
Bengaluru 3
Chiswick 3
Guangzhou 3
Hsinchu 3
Sala Baganza 3
Shanghai 3
Arzignano 2
Bangkok 2
Coventry 2
Foshan 2
Gaithersburg 2
Genoa 2
Halfweg 2
Leuven 2
Minsk 2
Munich 2
New Taipei 2
Nottingham 2
Sanbecho-ikeda 2
Scorzè 2
Southwark 2
Taichung 2
Taipei 2
Tokyo 2
Treviso 2
Tsukuba 2
Changsha 1
Dublin 1
Forest City 1
Hata 1
Herent 1
Hwaseong-si 1
Kolkata 1
Kyoto 1
Limbiate 1
London 1
Los Angeles 1
Miami 1
Nuremberg 1
Paris 1
Perugia 1
Takasu 1
Toyonaka 1
Venice 1
Washington 1
Wylie 1
Škofljica 1
Totale 235
Nome #
Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling 69
A Review of SiC Commercial Devices for Automotive: Properties and Challenges 47
GaN Vertical Devices: challenges for high performance and stability 39
Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements 30
GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives 30
Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques 29
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs 22
Threshold voltage variation of SiC trench MOSFETs during TDDB stress 13
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 11
Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements 10
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress 5
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors 5
Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements 4
Totale 314
Categoria #
all - tutte 1.464
article - articoli 423
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.887


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/20232 0 0 0 0 0 0 0 0 1 0 1 0
2023/2024210 0 7 34 52 7 16 25 12 17 5 19 16
2024/2025102 10 40 23 29 0 0 0 0 0 0 0 0
Totale 314