MARCUZZI, ALBERTO
 Distribuzione geografica
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Continente #
AS - Asia 1.022
NA - Nord America 644
EU - Europa 609
SA - Sud America 153
AF - Africa 106
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 8
Totale 2.554
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Nazione #
US - Stati Uniti d'America 563
SG - Singapore 274
CN - Cina 234
IT - Italia 231
HK - Hong Kong 121
VN - Vietnam 102
BR - Brasile 101
DE - Germania 75
IN - India 42
PL - Polonia 39
GB - Regno Unito 36
FR - Francia 34
KR - Corea 34
TW - Taiwan 30
JP - Giappone 23
NL - Olanda 23
CH - Svizzera 18
FI - Finlandia 17
IQ - Iraq 14
AR - Argentina 13
BD - Bangladesh 12
TR - Turchia 12
CA - Canada 11
SA - Arabia Saudita 11
AT - Austria 10
ES - Italia 10
RU - Federazione Russa 10
AE - Emirati Arabi Uniti 9
PH - Filippine 9
RO - Romania 9
CG - Congo 8
MX - Messico 8
ZA - Sudafrica 8
DO - Repubblica Dominicana 7
ID - Indonesia 7
IL - Israele 7
LU - Lussemburgo 7
AF - Afghanistan, Repubblica islamica di 6
BE - Belgio 6
BO - Bolivia 6
CL - Cile 6
EC - Ecuador 6
ET - Etiopia 6
HN - Honduras 6
IE - Irlanda 6
MN - Mongolia 6
MY - Malesia 6
SE - Svezia 6
SK - Slovacchia (Repubblica Slovacca) 6
TH - Thailandia 6
UA - Ucraina 6
XK - ???statistics.table.value.countryCode.XK??? 6
AL - Albania 5
BS - Bahamas 5
BW - Botswana 5
BZ - Belize 5
CO - Colombia 5
JM - Giamaica 5
KG - Kirghizistan 5
MA - Marocco 5
NI - Nicaragua 5
PK - Pakistan 5
PT - Portogallo 5
SI - Slovenia 5
UZ - Uzbekistan 5
VE - Venezuela 5
AM - Armenia 4
AO - Angola 4
AU - Australia 4
BA - Bosnia-Erzegovina 4
CI - Costa d'Avorio 4
CY - Cipro 4
EE - Estonia 4
EG - Egitto 4
GH - Ghana 4
GT - Guatemala 4
HT - Haiti 4
LC - Santa Lucia 4
LV - Lettonia 4
ME - Montenegro 4
MR - Mauritania 4
RW - Ruanda 4
TL - Timor Orientale 4
UY - Uruguay 4
VC - Saint Vincent e Grenadine 4
ZW - Zimbabwe 4
AD - Andorra 3
BJ - Benin 3
BY - Bielorussia 3
CV - Capo Verde 3
CZ - Repubblica Ceca 3
GM - Gambi 3
GN - Guinea 3
GR - Grecia 3
HU - Ungheria 3
IR - Iran 3
IS - Islanda 3
JO - Giordania 3
KZ - Kazakistan 3
LA - Repubblica Popolare Democratica del Laos 3
Totale 2.461
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Città #
Singapore 159
San Jose 130
Ashburn 105
Hong Kong 102
Padova 47
Santa Clara 47
Ho Chi Minh City 42
Los Angeles 32
Beijing 29
Milan 28
Bytom 27
Padua 27
Frankfurt am Main 26
Hanoi 24
Guangzhou 23
Munich 22
New York 20
Lauterbourg 16
Riese Pio X 16
Hefei 15
Zurich 15
Boardman 13
São Paulo 13
Taipei 11
Baghdad 9
Dongjak-gu 9
Bengaluru 8
Brazzaville 8
Council Bluffs 8
Orem 8
Shanghai 8
Warsaw 8
Catania 7
Da Nang 7
Dallas 7
Naples 7
Rome 7
Tokyo 7
Turku 7
Yongin-si 7
Atlanta 6
Cambridge 6
Nuremberg 6
Pristina 6
Redondo Beach 6
Ulan Bator 6
Yangmei District 6
Bishkek 5
Galliera Veneta 5
Jeddah 5
Lappeenranta 5
Managua 5
Modena 5
Nassau 5
Reggello 5
Sarcedo 5
Tappahannock 5
Tashkent 5
Abidjan 4
Abu Dhabi 4
Accra 4
Addis Ababa 4
Azzano Decimo 4
Bangkok 4
Bologna 4
Bristol 4
Campinas 4
Casablanca 4
Castries 4
Chengdu 4
Chicago 4
Dili 4
Dublin 4
Harare 4
Houston 4
Hsinchu 4
Johannesburg 4
Kingstown 4
Luanda 4
Mexico City 4
Montevideo 4
Nouakchott 4
Paris 4
Parma 4
Rio de Janeiro 4
Seoul 4
Thái Nguyên 4
Villeurbanne 4
Amman 3
Antananarivo 3
Bayreuth 3
Boston 3
Brasília 3
Bratislava 3
Brooklyn 3
Cairo 3
Can Tho 3
Chiswick 3
Chongqing 3
Conakry 3
Totale 1.364
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Nome #
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 364
Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements 190
Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling 180
A Review of SiC Commercial Devices for Automotive: Properties and Challenges 167
Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques 160
GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives 157
GaN Vertical Devices: challenges for high performance and stability 155
Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements 152
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs 147
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress 142
Threshold voltage variation of SiC trench MOSFETs during TDDB stress 138
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors 131
Interface-related VTH shift of SiC MOSFETs during constant current stress extracted from charge pumping measurements 128
Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC 121
Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements 101
Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current Stress 98
High Performance Wide Bandgap Power Devices Characterization with a Focus on SiC Devices 50
Totale 2.581
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Categoria #
all - tutte 6.233
article - articoli 2.337
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.570
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/20232 0 0 0 0 0 0 0 0 1 0 1 0
2023/2024210 0 7 34 52 7 16 25 12 17 5 19 16
2024/2025557 10 40 23 53 54 50 34 35 22 28 87 121
2025/20261.812 129 133 264 253 154 115 284 116 192 78 94 0
Totale 2.581