GASPAROTTO, ANDREA
 Distribuzione geografica
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Continente #
NA - Nord America 5.871
AS - Asia 2.398
EU - Europa 1.268
AF - Africa 625
SA - Sud America 548
OC - Oceania 71
Continente sconosciuto - Info sul continente non disponibili 37
Totale 10.818
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Nazione #
US - Stati Uniti d'America 5.520
SG - Singapore 919
CN - Cina 347
BR - Brasile 331
HK - Hong Kong 321
VN - Vietnam 166
FI - Finlandia 147
DE - Germania 137
IT - Italia 112
UA - Ucraina 95
FR - Francia 76
GB - Regno Unito 74
RU - Federazione Russa 70
IN - India 47
SE - Svezia 43
AR - Argentina 41
PL - Polonia 38
JP - Giappone 33
BJ - Benin 32
MX - Messico 32
TR - Turchia 31
ID - Indonesia 30
CO - Colombia 29
NL - Olanda 29
EC - Ecuador 26
IQ - Iraq 25
AL - Albania 24
ES - Italia 24
JM - Giamaica 23
SN - Senegal 23
AE - Emirati Arabi Uniti 22
AF - Afghanistan, Repubblica islamica di 22
HN - Honduras 22
IE - Irlanda 22
TZ - Tanzania 22
BB - Barbados 21
BD - Bangladesh 21
CM - Camerun 21
GR - Grecia 21
MN - Mongolia 21
MZ - Mozambico 21
PY - Paraguay 21
UY - Uruguay 21
ZA - Sudafrica 21
BZ - Belize 20
CV - Capo Verde 20
DK - Danimarca 20
DO - Repubblica Dominicana 20
KG - Kirghizistan 20
PE - Perù 20
SA - Arabia Saudita 20
TT - Trinidad e Tobago 20
AZ - Azerbaigian 19
CA - Canada 19
CW - ???statistics.table.value.countryCode.CW??? 19
DZ - Algeria 19
JO - Giordania 19
MR - Mauritania 19
NI - Nicaragua 19
TN - Tunisia 19
AT - Austria 18
BE - Belgio 18
BS - Bahamas 18
CH - Svizzera 18
CI - Costa d'Avorio 18
CU - Cuba 18
CZ - Repubblica Ceca 18
GE - Georgia 18
GM - Gambi 18
KR - Corea 18
LB - Libano 18
ZW - Zimbabwe 18
AM - Armenia 17
AO - Angola 17
AU - Australia 17
CG - Congo 17
CY - Cipro 17
KE - Kenya 17
MK - Macedonia 17
PR - Porto Rico 17
BO - Bolivia 16
CL - Cile 16
CR - Costa Rica 16
GT - Guatemala 16
IL - Israele 16
KZ - Kazakistan 16
NZ - Nuova Zelanda 16
PK - Pakistan 16
SD - Sudan 16
SK - Slovacchia (Repubblica Slovacca) 16
SO - Somalia 16
UZ - Uzbekistan 16
BF - Burkina Faso 15
EE - Estonia 15
GN - Guinea 15
HR - Croazia 15
HU - Ungheria 15
IS - Islanda 15
LV - Lettonia 15
LY - Libia 15
Totale 10.120
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Città #
Fairfield 979
Ashburn 623
Singapore 519
Woodbridge 384
Seattle 374
Houston 352
Jacksonville 347
Cambridge 312
Hong Kong 307
Wilmington 303
Chandler 237
Ann Arbor 174
Santa Clara 146
Princeton 132
Boardman 110
San Diego 84
Beijing 69
San Jose 57
Ho Chi Minh City 53
Medford 49
Helsinki 48
Nanjing 48
Los Angeles 37
Munich 37
New York 35
Roxbury 33
Cotonou 31
Padova 30
Chicago 27
São Paulo 26
Hanoi 25
Bytom 24
Dakar 23
Dong Ket 23
Ulan Bator 21
London 20
Guangzhou 19
Managua 19
Rio de Janeiro 19
Amman 18
Baku 18
Bridgetown 18
Des Moines 18
Norwalk 18
Abidjan 17
Bishkek 17
Dar es Salaam 17
Harare 17
Montevideo 17
Nanchang 17
Nouakchott 17
Nassau 16
Willemstad 16
Conakry 15
Havana 15
Hebei 15
Kingston 15
Lima 15
Maputo 15
Bamako 14
Dublin 14
Kampala 14
Luanda 14
Nairobi 14
Ouagadougou 14
Praia 14
Salt Lake City 14
Tashkent 14
Accra 13
Andorra la Vella 13
Changsha 13
Podgorica 13
San José 13
Vienna 13
Yerevan 13
Antananarivo 12
Castries 12
Phnom Penh 12
Port Moresby 12
Riga 12
Santo Domingo 12
Tbilisi 12
Tokyo 12
Brazzaville 11
Brooklyn 11
Guayaquil 11
Kabul 11
Kigali 11
Lusaka 11
Niamey 11
Noumea 11
Pristina 11
Reykjavik 11
Skopje 11
Tunis 11
Vientiane 11
Zagreb 11
Buffalo 10
Chennai 10
Dili 10
Totale 6.984
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Nome #
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 209
Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis 174
Laser induced crystallization of sputtered MoS2 thin films 170
In-depth photoluminescence spectra of pure CIGS thin films 169
Channeling Effects In High-energy Implantation of N+ In Silicon 165
Incorporation of active Fe impurities in GaInP by high temperature ion implantation 159
Channeling effects in high energy ion implantation: Si(N) 159
MOCVD Growth and Characterization of Cobalt Phosphide Thin Films on InP Substrates 157
Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDsGallium Nitride Materials and Devices VIII 156
Local structure of iron implanted in indium phosphide 153
Deep levels characterization in high temperature iron implanted InP 152
Fabricating Cu(In,Ga)Se2 solar cells on flexible substrates by a new roll-to-roll deposition system suitable for industrial applications 151
Incorporation of highly concentrated Iron impurities in InP by high temperature ion implantation 150
Spectroscopic characterization of the electrical properties of Fe implants on GaInP/GaAs 145
Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InP 145
Ion beam characterization of Fe implanted GaN 142
Atomic environment of Fe following high-temperature implantation in InP 142
Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes 141
Implant and characterization of highly concentrated Fe deep centers in InP 140
Al-o Complex-formation In Ion-implanted Czochralski and Floating-zone Si Substrates 140
Deep level thermal evolution in Fe implanted InP 139
Mechanisms for the activation of ion-implanted Fe in InP 139
A new method for CdSexTe1-x band grading for high efficiency thin-absorber CdTe solar cells 136
Al-o Interactions In Ion-implanted Crystalline Silicon 135
Electrical activation of the Fe2+/3+ trap in Fe-implanted InP 134
Role of the substrate doping in the activation of Fe2+ centers in Fe implanted InP 134
Effects of n-type doping on active Fe sites in ion implanted Fe in InP 134
Thermal-stability of Tasix/n-gaas Metallizations 133
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs 131
Effects of CdTe selenization on the electrical properties of the absorber for the fabrication of CdSexTe1-x/CdTe based solar cells 131
Electron-microscopy study of Fe-implanted InP 130
Improved stability of CdTe solar cells by absorber surface etching 130
CIGS thin films grown by hybrid sputtering-evaporation method: Properties and PV performance 130
Stabilizing effects of n-type doping on Fe and Mn acceptors in III-V compounds 129
Mev Energy Implantation of Fe In Inp 129
Axial Channeling of Boron Ions Into Silicon 129
V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis 129
Deep levels controlling the electrical properties of Fe-implanted GaInP/GaAs 128
Shallow Donors and Deep Levels In Gaas Grown By Atomic Layer Molecular-beam Epitaxy 127
Evolution of the local Fe environment in high temperature implanted InP 127
Pre-amorphization Damage Study In As-implanted Silicon 126
Dopant Evaporation Sources For Molecular-beam Epitaxy 126
On the contribution of secondary fluorescence to the Fe signal in proton-induced X-ray emission channeling measurements of Fe-doped GaN 124
Annealing behavior of high temperature implanted Fe impurities in n-InP 124
Optical properties and applications of heavily Fe implanted InP 124
Influence of the dislocation loops on the anomalous diffusion of Fe implanted into InP 124
High resistivity in GaInP/GaAs by high temperature Fe ion implantation 123
Dopant, Defects and Oxygen Interaction In Mev Implanted Czochralski Silicon 122
Electrical Activation Of Fe Impurities Introduced In III-V Semiconductors By High Temperature Ion Implantation 120
Electrical spectroscopy of high resistivity ion-implanted layers by current-voltage measurements 119
High-energy Implants of Aluminum In Czochralski and Floating Zone Grown Silicon Substrates 119
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si 119
Ion-implantation and Annealing of Fe For Semiinsulating Layers Formation In Inp 119
Analysis of a novel CuCl2 back contact process for improved stability in CdTe solar cells 118
Electrical and structural characterization of Fe implanted GaInP 117
High Fe solubility in InP by high temperature ion implantation 117
Measurements and Applications of High-energy Boron Implants In Silicon 115
Gettering of Fe at the End of Range loops in Fe-implanted InP 114
Defect characterization in InP substrates implanted with 2 MeV Fe ions 114
Local structure of Fe incorporated in GaInP layers by high temperature ion implantation 113
Open-tube Zinc Diffusion Into Indium-phosphide Under A Hydrogen Ambient - Technique Characterization, Acceptor Passivation and Activation Phenomena 112
Hole mobility in aluminium implanted silicon 112
Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire 111
Implants of Aluminum In the 50-120 Mev Energy-range Into Silicon 110
Growth and characterization of buried GaSb p-n junctions for photovoltaic applications 110
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si 107
Analysis of CdSe as an alternative buffer layer for Sb2Se3 solar cells 105
Microwave driven synthesis of narrow bandgap alpha-tin nanoparticles on silicon 105
Impurity effects on oxygen precipitation induced by MeV implants in Cz silicon 103
Experimental-analysis of High-energy Boron Implantation In Silicon 102
Semi-insulating behaviour in Fe MeV implanted n-type InP 100
Ferromagnetism in ion implanted amorphous and nanocrystalline MnxGe1-x 99
Mg diffusion and dislocation modifications during high-temperature annealing of InGaN-based LEDs 98
Oxidation induced precipitation in Al implanted epitaxial silicon 94
Interaction between Fe, dopants, and secondary defects in MeV Fe ion implanted InP 92
High Fe2+/3+ trap concentration in heavily compensated implanted InP 92
Ion implantation and diffusion of Al in a SiO2/Si system 92
Gallium In-Depth Profile in Bromine- Etched Copper–Indium–Galium–(Di)selenide (CIGS) Thin Films Inspected Using Raman Spectroscopy 89
Deep-level electroluminescence at 3.5 µm from semi-insulating InP layers ion implanted with Fe 87
Assessment of electrical and optical properties of heavily Fe-implanted semi-insulating InP 82
Thermal oxidation of high dose aluminum implanted silicon 82
Ion beam analysis and electrical characterization of substitutional Fe properties in Fe implanted InP 82
MOCVD growth and characterization of cobalt phospide thin films on InP substrates 75
Production of Semiinsulating Layers In N-doped Inp By Fe Implantation 75
Metallorganic CVD of nanostructured composite TiO2-Pt thin films: a kinetics approach 71
Mid-ir (3.5 µm) electroluminescence from heavily Fe2+ ion implanted semi-insulating InP 65
Distribution of Fe and extended defects in Fe-implanted InP 62
High resistance buried layers by Fe MeV implantation in n-type InP 56
How the selenium distribution in CdTe affects the carrier properties of CdSeTe/CdTe solar cells 55
V-pits and trench defects in GaN-based optoelectronic devices: Extensive characterization and modeling 51
Defects in InGaN QW structures: microscopic properties and modeling 33
Totale 10.859
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Categoria #
all - tutte 36.536
article - articoli 31.201
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 67.737
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021468 0 0 0 0 0 0 18 89 156 56 83 66
2021/20221.124 9 128 204 67 35 40 72 155 53 9 152 200
2022/2023588 167 42 8 42 103 64 3 52 66 1 31 9
2023/2024294 19 48 23 22 17 37 18 9 13 2 30 56
2024/20251.620 9 152 85 72 200 46 65 105 165 59 287 375
2025/20263.877 213 580 928 1.242 560 258 96 0 0 0 0 0
Totale 10.859