GASPAROTTO, ANDREA
 Distribuzione geografica
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Continente #
NA - Nord America 5.728
AS - Asia 2.251
EU - Europa 1.245
AF - Africa 612
SA - Sud America 533
OC - Oceania 69
Continente sconosciuto - Info sul continente non disponibili 37
Totale 10.475
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Nazione #
US - Stati Uniti d'America 5.392
SG - Singapore 816
CN - Cina 332
BR - Brasile 322
HK - Hong Kong 320
VN - Vietnam 164
FI - Finlandia 147
DE - Germania 136
IT - Italia 111
UA - Ucraina 95
FR - Francia 76
GB - Regno Unito 74
RU - Federazione Russa 66
IN - India 42
SE - Svezia 41
AR - Argentina 40
PL - Polonia 36
BJ - Benin 32
JP - Giappone 31
MX - Messico 31
CO - Colombia 29
TR - Turchia 29
NL - Olanda 28
ID - Indonesia 27
IQ - Iraq 25
ES - Italia 24
EC - Ecuador 23
AE - Emirati Arabi Uniti 22
IE - Irlanda 22
SN - Senegal 22
TZ - Tanzania 22
AF - Afghanistan, Repubblica islamica di 21
AL - Albania 21
BB - Barbados 21
CM - Camerun 21
HN - Honduras 21
JM - Giamaica 21
MN - Mongolia 21
MZ - Mozambico 21
UY - Uruguay 21
CV - Capo Verde 20
GR - Grecia 20
PE - Perù 20
PY - Paraguay 20
SA - Arabia Saudita 20
TT - Trinidad e Tobago 20
ZA - Sudafrica 20
AZ - Azerbaigian 19
BZ - Belize 19
CW - ???statistics.table.value.countryCode.CW??? 19
DK - Danimarca 19
DO - Repubblica Dominicana 19
JO - Giordania 19
KG - Kirghizistan 19
MR - Mauritania 19
NI - Nicaragua 19
AT - Austria 18
BE - Belgio 18
BS - Bahamas 18
CH - Svizzera 18
CI - Costa d'Avorio 18
CU - Cuba 18
CZ - Repubblica Ceca 18
DZ - Algeria 18
KR - Corea 18
LB - Libano 18
TN - Tunisia 18
AM - Armenia 17
AO - Angola 17
AU - Australia 17
CG - Congo 17
CY - Cipro 17
GE - Georgia 17
GM - Gambi 17
KE - Kenya 17
MK - Macedonia 17
PR - Porto Rico 17
ZW - Zimbabwe 17
BD - Bangladesh 16
CL - Cile 16
NZ - Nuova Zelanda 16
PK - Pakistan 16
SD - Sudan 16
SK - Slovacchia (Repubblica Slovacca) 16
SO - Somalia 16
UZ - Uzbekistan 16
BO - Bolivia 15
CA - Canada 15
GT - Guatemala 15
HR - Croazia 15
HU - Ungheria 15
IL - Israele 15
KZ - Kazakistan 15
LV - Lettonia 15
LY - Libia 15
ML - Mali 15
MU - Mauritius 15
TH - Thailandia 15
VE - Venezuela 15
XK - ???statistics.table.value.countryCode.XK??? 15
Totale 9.800
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Città #
Fairfield 979
Ashburn 587
Singapore 456
Woodbridge 384
Seattle 374
Houston 349
Jacksonville 347
Cambridge 312
Hong Kong 307
Wilmington 303
Chandler 237
Ann Arbor 174
Santa Clara 146
Princeton 132
Boardman 110
San Diego 84
Beijing 69
Ho Chi Minh City 53
Medford 49
Helsinki 48
Nanjing 48
Munich 37
Los Angeles 35
Roxbury 33
New York 32
Cotonou 31
Padova 30
Chicago 26
Hanoi 25
Bytom 24
Dong Ket 23
São Paulo 23
Dakar 22
Ulan Bator 21
London 20
Guangzhou 19
Managua 19
Rio de Janeiro 19
Amman 18
Baku 18
Bridgetown 18
Des Moines 18
Norwalk 18
Abidjan 17
Bishkek 17
Dar es Salaam 17
Montevideo 17
Nanchang 17
Nouakchott 17
Harare 16
Nassau 16
Willemstad 16
Havana 15
Hebei 15
Lima 15
Maputo 15
Bamako 14
Conakry 14
Dublin 14
Kampala 14
Luanda 14
Nairobi 14
Praia 14
Salt Lake City 14
Tashkent 14
Accra 13
Andorra la Vella 13
Changsha 13
Kingston 13
Ouagadougou 13
Podgorica 13
Vienna 13
Yerevan 13
Castries 12
Phnom Penh 12
Riga 12
Antananarivo 11
Brazzaville 11
Kabul 11
Kigali 11
Lusaka 11
Niamey 11
Noumea 11
Port Moresby 11
Pristina 11
Reykjavik 11
San José 11
Santo Domingo 11
Skopje 11
Tbilisi 11
Tokyo 11
Tunis 11
Vientiane 11
Zagreb 11
Buffalo 10
Dili 10
Jiaxing 10
La Paz 10
San Francisco 10
San Pedro Sula 10
Totale 6.811
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Nome #
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 203
In-depth photoluminescence spectra of pure CIGS thin films 165
Laser induced crystallization of sputtered MoS2 thin films 162
Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis 161
Incorporation of active Fe impurities in GaInP by high temperature ion implantation 159
Channeling Effects In High-energy Implantation of N+ In Silicon 158
MOCVD Growth and Characterization of Cobalt Phosphide Thin Films on InP Substrates 156
Channeling effects in high energy ion implantation: Si(N) 153
Incorporation of highly concentrated Iron impurities in InP by high temperature ion implantation 149
Local structure of iron implanted in indium phosphide 148
Deep levels characterization in high temperature iron implanted InP 148
Fabricating Cu(In,Ga)Se2 solar cells on flexible substrates by a new roll-to-roll deposition system suitable for industrial applications 147
Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDsGallium Nitride Materials and Devices VIII 147
Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InP 141
Spectroscopic characterization of the electrical properties of Fe implants on GaInP/GaAs 140
Atomic environment of Fe following high-temperature implantation in InP 139
Ion beam characterization of Fe implanted GaN 137
Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes 136
Implant and characterization of highly concentrated Fe deep centers in InP 135
Mechanisms for the activation of ion-implanted Fe in InP 135
Electrical activation of the Fe2+/3+ trap in Fe-implanted InP 134
Deep level thermal evolution in Fe implanted InP 134
Al-o Complex-formation In Ion-implanted Czochralski and Floating-zone Si Substrates 134
Thermal-stability of Tasix/n-gaas Metallizations 132
Role of the substrate doping in the activation of Fe2+ centers in Fe implanted InP 130
Effects of n-type doping on active Fe sites in ion implanted Fe in InP 130
A new method for CdSexTe1-x band grading for high efficiency thin-absorber CdTe solar cells 130
Stabilizing effects of n-type doping on Fe and Mn acceptors in III-V compounds 129
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs 129
Al-o Interactions In Ion-implanted Crystalline Silicon 129
Electron-microscopy study of Fe-implanted InP 127
Improved stability of CdTe solar cells by absorber surface etching 127
CIGS thin films grown by hybrid sputtering-evaporation method: Properties and PV performance 126
Evolution of the local Fe environment in high temperature implanted InP 126
Effects of CdTe selenization on the electrical properties of the absorber for the fabrication of CdSexTe1-x/CdTe based solar cells 125
Shallow Donors and Deep Levels In Gaas Grown By Atomic Layer Molecular-beam Epitaxy 124
Mev Energy Implantation of Fe In Inp 124
Pre-amorphization Damage Study In As-implanted Silicon 124
Axial Channeling of Boron Ions Into Silicon 124
Deep levels controlling the electrical properties of Fe-implanted GaInP/GaAs 123
Dopant Evaporation Sources For Molecular-beam Epitaxy 122
Optical properties and applications of heavily Fe implanted InP 121
Dopant, Defects and Oxygen Interaction In Mev Implanted Czochralski Silicon 121
Influence of the dislocation loops on the anomalous diffusion of Fe implanted into InP 121
High resistivity in GaInP/GaAs by high temperature Fe ion implantation 120
On the contribution of secondary fluorescence to the Fe signal in proton-induced X-ray emission channeling measurements of Fe-doped GaN 119
Annealing behavior of high temperature implanted Fe impurities in n-InP 119
Electrical Activation Of Fe Impurities Introduced In III-V Semiconductors By High Temperature Ion Implantation 118
High-energy Implants of Aluminum In Czochralski and Floating Zone Grown Silicon Substrates 118
Ion-implantation and Annealing of Fe For Semiinsulating Layers Formation In Inp 118
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si 116
V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis 116
Electrical and structural characterization of Fe implanted GaInP 115
High Fe solubility in InP by high temperature ion implantation 115
Electrical spectroscopy of high resistivity ion-implanted layers by current-voltage measurements 113
Local structure of Fe incorporated in GaInP layers by high temperature ion implantation 113
Gettering of Fe at the End of Range loops in Fe-implanted InP 111
Hole mobility in aluminium implanted silicon 111
Analysis of a novel CuCl2 back contact process for improved stability in CdTe solar cells 111
Measurements and Applications of High-energy Boron Implants In Silicon 110
Open-tube Zinc Diffusion Into Indium-phosphide Under A Hydrogen Ambient - Technique Characterization, Acceptor Passivation and Activation Phenomena 109
Growth and characterization of buried GaSb p-n junctions for photovoltaic applications 109
Implants of Aluminum In the 50-120 Mev Energy-range Into Silicon 108
Defect characterization in InP substrates implanted with 2 MeV Fe ions 108
Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire 107
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si 105
Experimental-analysis of High-energy Boron Implantation In Silicon 101
Impurity effects on oxygen precipitation induced by MeV implants in Cz silicon 101
Microwave driven synthesis of narrow bandgap alpha-tin nanoparticles on silicon 100
Semi-insulating behaviour in Fe MeV implanted n-type InP 99
Analysis of CdSe as an alternative buffer layer for Sb2Se3 solar cells 98
Ferromagnetism in ion implanted amorphous and nanocrystalline MnxGe1-x 95
Oxidation induced precipitation in Al implanted epitaxial silicon 91
Interaction between Fe, dopants, and secondary defects in MeV Fe ion implanted InP 90
Mg diffusion and dislocation modifications during high-temperature annealing of InGaN-based LEDs 90
High Fe2+/3+ trap concentration in heavily compensated implanted InP 90
Ion implantation and diffusion of Al in a SiO2/Si system 86
Gallium In-Depth Profile in Bromine- Etched Copper–Indium–Galium–(Di)selenide (CIGS) Thin Films Inspected Using Raman Spectroscopy 86
Deep-level electroluminescence at 3.5 µm from semi-insulating InP layers ion implanted with Fe 83
Thermal oxidation of high dose aluminum implanted silicon 81
Assessment of electrical and optical properties of heavily Fe-implanted semi-insulating InP 79
Ion beam analysis and electrical characterization of substitutional Fe properties in Fe implanted InP 79
Production of Semiinsulating Layers In N-doped Inp By Fe Implantation 74
MOCVD growth and characterization of cobalt phospide thin films on InP substrates 73
Metallorganic CVD of nanostructured composite TiO2-Pt thin films: a kinetics approach 71
Mid-ir (3.5 µm) electroluminescence from heavily Fe2+ ion implanted semi-insulating InP 64
Distribution of Fe and extended defects in Fe-implanted InP 61
High resistance buried layers by Fe MeV implantation in n-type InP 55
How the selenium distribution in CdTe affects the carrier properties of CdSeTe/CdTe solar cells 49
V-pits and trench defects in GaN-based optoelectronic devices: Extensive characterization and modeling 39
Defects in InGaN QW structures: microscopic properties and modeling 27
Totale 10.516
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Categoria #
all - tutte 35.571
article - articoli 30.400
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 65.971
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021567 0 0 0 0 0 99 18 89 156 56 83 66
2021/20221.124 9 128 204 67 35 40 72 155 53 9 152 200
2022/2023588 167 42 8 42 103 64 3 52 66 1 31 9
2023/2024294 19 48 23 22 17 37 18 9 13 2 30 56
2024/20251.620 9 152 85 72 200 46 65 105 165 59 287 375
2025/20263.534 213 580 928 1.242 560 11 0 0 0 0 0 0
Totale 10.516