GASPAROTTO, ANDREA
 Distribuzione geografica
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Continente #
NA - Nord America 7.379
AS - Asia 3.723
EU - Europa 1.562
AF - Africa 671
SA - Sud America 647
Continente sconosciuto - Info sul continente non disponibili 81
OC - Oceania 73
Totale 14.136
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Nazione #
US - Stati Uniti d'America 6.969
SG - Singapore 1.165
CN - Cina 619
VN - Vietnam 467
HK - Hong Kong 441
BR - Brasile 386
IT - Italia 269
FR - Francia 163
FI - Finlandia 150
DE - Germania 143
BD - Bangladesh 126
IN - India 114
UA - Ucraina 101
GB - Regno Unito 88
RU - Federazione Russa 72
IQ - Iraq 61
TR - Turchia 58
AR - Argentina 51
JP - Giappone 49
SA - Arabia Saudita 49
MX - Messico 44
SE - Svezia 44
CO - Colombia 43
PK - Pakistan 42
PL - Polonia 41
CA - Canada 38
ID - Indonesia 37
PH - Filippine 36
EC - Ecuador 34
JM - Giamaica 34
ZA - Sudafrica 33
BJ - Benin 32
NL - Olanda 31
ES - Italia 30
AE - Emirati Arabi Uniti 25
HN - Honduras 25
SN - Senegal 25
AL - Albania 24
JO - Giordania 24
IE - Irlanda 23
TZ - Tanzania 23
UY - Uruguay 23
UZ - Uzbekistan 23
AF - Afghanistan, Repubblica islamica di 22
BB - Barbados 22
KE - Kenya 22
KR - Corea 22
MN - Mongolia 22
PY - Paraguay 22
TT - Trinidad e Tobago 22
BZ - Belize 21
CL - Cile 21
CM - Camerun 21
DZ - Algeria 21
GR - Grecia 21
KG - Kirghizistan 21
MY - Malesia 21
MZ - Mozambico 21
NI - Nicaragua 21
PE - Perù 21
TN - Tunisia 21
CV - Capo Verde 20
DK - Danimarca 20
DO - Repubblica Dominicana 20
LB - Libano 20
AU - Australia 19
AZ - Azerbaigian 19
BE - Belgio 19
BS - Bahamas 19
CH - Svizzera 19
CR - Costa Rica 19
CW - ???statistics.table.value.countryCode.CW??? 19
ET - Etiopia 19
MR - Mauritania 19
TH - Thailandia 19
AT - Austria 18
CI - Costa d'Avorio 18
CU - Cuba 18
CZ - Repubblica Ceca 18
GE - Georgia 18
GM - Gambi 18
KZ - Kazakistan 18
PR - Porto Rico 18
VE - Venezuela 18
ZW - Zimbabwe 18
AM - Armenia 17
AO - Angola 17
CG - Congo 17
CY - Cipro 17
MK - Macedonia 17
NP - Nepal 17
PS - Palestinian Territory 17
BF - Burkina Faso 16
BO - Bolivia 16
EE - Estonia 16
GT - Guatemala 16
HR - Croazia 16
IL - Israele 16
NZ - Nuova Zelanda 16
RO - Romania 16
Totale 13.357
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Città #
Fairfield 979
Ashburn 936
Singapore 721
San Jose 694
Hong Kong 408
Woodbridge 384
Seattle 375
Houston 362
Jacksonville 349
Cambridge 316
Wilmington 303
Chandler 237
Santa Clara 185
Ann Arbor 175
Ho Chi Minh City 141
Princeton 132
Boardman 112
Hanoi 92
Los Angeles 89
San Diego 84
Lauterbourg 78
Beijing 76
New York 59
Helsinki 51
Medford 49
Nanjing 48
Chicago 37
Munich 37
Roxbury 33
Guangzhou 32
Cotonou 31
Dallas 31
Padova 30
Council Bluffs 28
São Paulo 27
Da Nang 25
Dakar 25
Rome 25
Bytom 24
Milan 24
Baghdad 23
Dong Ket 23
London 23
Amman 22
Ulan Bator 22
Kingston 21
Managua 21
Rio de Janeiro 21
Haiphong 20
Tashkent 20
Tokyo 20
Bologna 19
Bridgetown 19
Montevideo 19
Baku 18
Dar es Salaam 18
Des Moines 18
Nairobi 18
Norwalk 18
Tianjin 18
Abidjan 17
Addis Ababa 17
Bishkek 17
Harare 17
Jeddah 17
Nanchang 17
Nassau 17
Nouakchott 17
Willemstad 16
Brooklyn 15
Buffalo 15
Conakry 15
Dublin 15
Havana 15
Hebei 15
Lima 15
Maputo 15
Orem 15
Ouagadougou 15
Salt Lake City 15
Bamako 14
Kampala 14
Luanda 14
Praia 14
San Francisco 14
San José 14
Accra 13
Andorra la Vella 13
Antananarivo 13
Changsha 13
Dhaka 13
Guayaquil 13
Phnom Penh 13
Podgorica 13
Shenzhen 13
Vienna 13
Yerevan 13
Castries 12
Denver 12
Johannesburg 12
Totale 8.825
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Nome #
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 248
Laser induced crystallization of sputtered MoS2 thin films 235
Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis 233
Fabricating Cu(In,Ga)Se2 solar cells on flexible substrates by a new roll-to-roll deposition system suitable for industrial applications 220
In-depth photoluminescence spectra of pure CIGS thin films 210
A new method for CdSexTe1-x band grading for high efficiency thin-absorber CdTe solar cells 207
Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDsGallium Nitride Materials and Devices VIII 206
Channeling Effects In High-energy Implantation of N+ In Silicon 195
Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes 195
Improved stability of CdTe solar cells by absorber surface etching 195
Local structure of iron implanted in indium phosphide 194
Incorporation of active Fe impurities in GaInP by high temperature ion implantation 187
Incorporation of highly concentrated Iron impurities in InP by high temperature ion implantation 185
Electron-microscopy study of Fe-implanted InP 184
Thermal-stability of Tasix/n-gaas Metallizations 183
V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis 183
Al-o Complex-formation In Ion-implanted Czochralski and Floating-zone Si Substrates 181
Channeling effects in high energy ion implantation: Si(N) 181
Ion beam characterization of Fe implanted GaN 181
Shallow Donors and Deep Levels In Gaas Grown By Atomic Layer Molecular-beam Epitaxy 178
MOCVD Growth and Characterization of Cobalt Phosphide Thin Films on InP Substrates 178
CIGS thin films grown by hybrid sputtering-evaporation method: Properties and PV performance 178
Implant and characterization of highly concentrated Fe deep centers in InP 177
Defect characterization in InP substrates implanted with 2 MeV Fe ions 176
Atomic environment of Fe following high-temperature implantation in InP 175
Deep levels characterization in high temperature iron implanted InP 175
Analysis of a novel CuCl2 back contact process for improved stability in CdTe solar cells 173
Al-o Interactions In Ion-implanted Crystalline Silicon 173
Axial Channeling of Boron Ions Into Silicon 172
Effects of CdTe selenization on the electrical properties of the absorber for the fabrication of CdSexTe1-x/CdTe based solar cells 172
Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InP 171
Mechanisms for the activation of ion-implanted Fe in InP 170
Role of the substrate doping in the activation of Fe2+ centers in Fe implanted InP 170
Spectroscopic characterization of the electrical properties of Fe implants on GaInP/GaAs 168
V-pits and trench defects in GaN-based optoelectronic devices: Extensive characterization and modeling 163
Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire 163
Deep level thermal evolution in Fe implanted InP 162
Pre-amorphization Damage Study In As-implanted Silicon 162
Deep levels controlling the electrical properties of Fe-implanted GaInP/GaAs 160
Effects of n-type doping on active Fe sites in ion implanted Fe in InP 160
On the contribution of secondary fluorescence to the Fe signal in proton-induced X-ray emission channeling measurements of Fe-doped GaN 159
Measurements and Applications of High-energy Boron Implants In Silicon 156
Microwave driven synthesis of narrow bandgap alpha-tin nanoparticles on silicon 154
Electrical activation of the Fe2+/3+ trap in Fe-implanted InP 154
Annealing behavior of high temperature implanted Fe impurities in n-InP 154
Electrical spectroscopy of high resistivity ion-implanted layers by current-voltage measurements 153
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs 153
Evolution of the local Fe environment in high temperature implanted InP 152
Stabilizing effects of n-type doping on Fe and Mn acceptors in III-V compounds 151
High Fe solubility in InP by high temperature ion implantation 151
Dopant Evaporation Sources For Molecular-beam Epitaxy 151
Optical properties and applications of heavily Fe implanted InP 149
High resistivity in GaInP/GaAs by high temperature Fe ion implantation 149
Influence of the dislocation loops on the anomalous diffusion of Fe implanted into InP 149
Mev Energy Implantation of Fe In Inp 148
Hole mobility in aluminium implanted silicon 148
Analysis of CdSe as an alternative buffer layer for Sb2Se3 solar cells 146
Electrical Activation Of Fe Impurities Introduced In III-V Semiconductors By High Temperature Ion Implantation 146
High-energy Implants of Aluminum In Czochralski and Floating Zone Grown Silicon Substrates 145
Oxidation induced precipitation in Al implanted epitaxial silicon 144
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si 144
Ion-implantation and Annealing of Fe For Semiinsulating Layers Formation In Inp 144
Electrical and structural characterization of Fe implanted GaInP 143
Dopant, Defects and Oxygen Interaction In Mev Implanted Czochralski Silicon 142
Ferromagnetism in ion implanted amorphous and nanocrystalline MnxGe1-x 141
Local structure of Fe incorporated in GaInP layers by high temperature ion implantation 140
Mg diffusion and dislocation modifications during high-temperature annealing of InGaN-based LEDs 139
Ion implantation and diffusion of Al in a SiO2/Si system 137
Open-tube Zinc Diffusion Into Indium-phosphide Under A Hydrogen Ambient - Technique Characterization, Acceptor Passivation and Activation Phenomena 135
Implants of Aluminum In the 50-120 Mev Energy-range Into Silicon 134
Impurity effects on oxygen precipitation induced by MeV implants in Cz silicon 134
Gettering of Fe at the End of Range loops in Fe-implanted InP 132
Growth and characterization of buried GaSb p-n junctions for photovoltaic applications 132
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si 131
Experimental-analysis of High-energy Boron Implantation In Silicon 130
Semi-insulating behaviour in Fe MeV implanted n-type InP 128
Gallium In-Depth Profile in Bromine- Etched Copper–Indium–Galium–(Di)selenide (CIGS) Thin Films Inspected Using Raman Spectroscopy 128
Production of Semiinsulating Layers In N-doped Inp By Fe Implantation 120
High Fe2+/3+ trap concentration in heavily compensated implanted InP 119
Interaction between Fe, dopants, and secondary defects in MeV Fe ion implanted InP 113
Ion beam analysis and electrical characterization of substitutional Fe properties in Fe implanted InP 111
Thermal oxidation of high dose aluminum implanted silicon 106
Defects in InGaN QW structures: microscopic properties and modeling 104
Deep-level electroluminescence at 3.5 µm from semi-insulating InP layers ion implanted with Fe 104
Assessment of electrical and optical properties of heavily Fe-implanted semi-insulating InP 103
Metallorganic CVD of nanostructured composite TiO2-Pt thin films: a kinetics approach 95
MOCVD growth and characterization of cobalt phospide thin films on InP substrates 95
Distribution of Fe and extended defects in Fe-implanted InP 83
How the selenium distribution in CdTe affects the carrier properties of CdSeTe/CdTe solar cells 82
Mid-ir (3.5 µm) electroluminescence from heavily Fe2+ ion implanted semi-insulating InP 82
High resistance buried layers by Fe MeV implantation in n-type InP 79
How the selenium is affecting the physical and electrical properties of ultra-thin CdSeTe/CdTe solar cells 14
Sb2Se3 Thin Films for Doping the Absorber in CdTe Solar Cells 11
CdCl2 Treatment for Cu2ZnSn(S,Se)4: A Method to Enhance the Solar Cell Performance 10
Totale 14.136
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Categoria #
all - tutte 44.220
article - articoli 37.736
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 81.956
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.115 0 128 204 67 35 40 72 155 53 9 152 200
2022/2023588 167 42 8 42 103 64 3 52 66 1 31 9
2023/2024294 19 48 23 22 17 37 18 9 13 2 30 56
2024/20251.620 9 152 85 72 200 46 65 105 165 59 287 375
2025/20266.749 213 580 928 1.242 560 258 827 656 618 420 266 181
2026/2027405 279 126 0 0 0 0 0 0 0 0 0 0
Totale 14.136