Al ions in the 50-120 MeV energy range were implanted in Si substrates for fluences varying between 1 x 10(14) and 3.5 x 10(15) /cm2. The electrical and chemical Al distributions were obtained by spreading resistance profilometry and secondary ion mass spectroscopy and the two principal moments, R(p) and DELTAR(p), were measured. On low resistivity samples, rho = 0.01 OMEGA cm, the disorder profile induced by the 100 MeV Al implant was determined from the electrical measurement of the inactivated bulk dopant (boron) distribution. The diffusion coefficient of Al implanted into floating-zone silicon was extracted from the electrical profiles after thermal treatments in the 1000-1290-degrees-C temperature range with the result D = 7.4 exp[-3.42(eV)/kT](cm2/s).
Implants of Aluminum In the 50-120 Mev Energy-range Into Silicon
CARNERA, ALBERTO;GASPAROTTO, ANDREA
1993
Abstract
Al ions in the 50-120 MeV energy range were implanted in Si substrates for fluences varying between 1 x 10(14) and 3.5 x 10(15) /cm2. The electrical and chemical Al distributions were obtained by spreading resistance profilometry and secondary ion mass spectroscopy and the two principal moments, R(p) and DELTAR(p), were measured. On low resistivity samples, rho = 0.01 OMEGA cm, the disorder profile induced by the 100 MeV Al implant was determined from the electrical measurement of the inactivated bulk dopant (boron) distribution. The diffusion coefficient of Al implanted into floating-zone silicon was extracted from the electrical profiles after thermal treatments in the 1000-1290-degrees-C temperature range with the result D = 7.4 exp[-3.42(eV)/kT](cm2/s).
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