An oxygen precipitation phenomenon was evidenced on high energy implanted Czochralski silicon samples. Al, Si, P, O and C ions with energies in the 1-6.8 MeV range and doses in the 4 X 10(14) - 1 X 10(15)/cm(2) range were single or double implanted in CZ-Si. A strong interaction was evidenced between the implanted species, the damage and the oxygen present in the substrates after annealing at 1100 or 1200 degrees C for 30 min. The oxygen precipitation is greatly enhanced by the presence of Al that interacting with O results almost completely electrically inactive.
Dopant, Defects and Oxygen Interaction In Mev Implanted Czochralski Silicon
CARNERA, ALBERTO;GASPAROTTO, ANDREA;
1995
Abstract
An oxygen precipitation phenomenon was evidenced on high energy implanted Czochralski silicon samples. Al, Si, P, O and C ions with energies in the 1-6.8 MeV range and doses in the 4 X 10(14) - 1 X 10(15)/cm(2) range were single or double implanted in CZ-Si. A strong interaction was evidenced between the implanted species, the damage and the oxygen present in the substrates after annealing at 1100 or 1200 degrees C for 30 min. The oxygen precipitation is greatly enhanced by the presence of Al that interacting with O results almost completely electrically inactive.
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