Channeling Effects In High-energy Implantation of N+ In Silicon

Nitrogen implantation of Si single crystals in the 600 keV to 1.4 MeV energy range in random, <100> and <110> alignment conditions on <100> cut silicon wafers was performed. The 6 x 10(13) - 2 x 10(16) cm-2 fluence range was investigated. The beam alignment along the various axial directions was precisely checked by monitoring the backscattered nitrogen signal. RBS-channeling analysis was performed in order to measure the damage profiles. The nitrogen concentration profiles were analyzed by SIMS in all the implanted samples. The behaviour of the channeled component and the amorphization process was studied as a function of the dose for all the implantation orientations. The energy loss of the channeled ions was also estimated.