RONCHI, NICOLO'
 Distribuzione geografica
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Continente #
NA - Nord America 1.801
AS - Asia 754
EU - Europa 414
AF - Africa 147
SA - Sud America 101
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 7
Totale 3.236
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Nazione #
US - Stati Uniti d'America 1.731
SG - Singapore 274
CN - Cina 178
HK - Hong Kong 83
DE - Germania 61
VN - Vietnam 55
PL - Polonia 54
BR - Brasile 47
FI - Finlandia 46
UA - Ucraina 32
IN - India 31
IT - Italia 21
SE - Svezia 20
FR - Francia 18
RU - Federazione Russa 17
AR - Argentina 13
IE - Irlanda 13
NL - Olanda 13
GB - Regno Unito 12
GF - Guiana Francese 10
JP - Giappone 10
CO - Colombia 9
ES - Italia 9
PE - Perù 9
CG - Congo 8
KR - Corea 8
MD - Moldavia 8
TW - Taiwan 8
ZW - Zimbabwe 8
AO - Angola 7
BE - Belgio 7
DJ - Gibuti 7
IQ - Iraq 7
PA - Panama 7
AE - Emirati Arabi Uniti 6
AT - Austria 6
ET - Etiopia 6
KG - Kirghizistan 6
KH - Cambogia 6
MX - Messico 6
NP - Nepal 6
PS - Palestinian Territory 6
RS - Serbia 6
TR - Turchia 6
BD - Bangladesh 5
BF - Burkina Faso 5
BY - Bielorussia 5
CA - Canada 5
CI - Costa d'Avorio 5
CR - Costa Rica 5
IS - Islanda 5
KE - Kenya 5
LC - Santa Lucia 5
ME - Montenegro 5
NO - Norvegia 5
SI - Slovenia 5
TN - Tunisia 5
TT - Trinidad e Tobago 5
ZA - Sudafrica 5
AD - Andorra 4
AL - Albania 4
AM - Armenia 4
AU - Australia 4
BJ - Benin 4
CU - Cuba 4
CV - Capo Verde 4
CW - ???statistics.table.value.countryCode.CW??? 4
CY - Cipro 4
CZ - Repubblica Ceca 4
EG - Egitto 4
GA - Gabon 4
GE - Georgia 4
GH - Ghana 4
GM - Gambi 4
HN - Honduras 4
ID - Indonesia 4
IR - Iran 4
LU - Lussemburgo 4
LY - Libia 4
MG - Madagascar 4
MR - Mauritania 4
MW - Malawi 4
MZ - Mozambico 4
PH - Filippine 4
SD - Sudan 4
TJ - Tagikistan 4
TL - Timor Orientale 4
TZ - Tanzania 4
UY - Uruguay 4
BA - Bosnia-Erzegovina 3
BB - Barbados 3
BW - Botswana 3
CH - Svizzera 3
CL - Cile 3
DO - Repubblica Dominicana 3
EE - Estonia 3
GP - Guadalupe 3
GR - Grecia 3
HR - Croazia 3
JO - Giordania 3
Totale 3.129
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Città #
Woodbridge 224
Fairfield 187
Jacksonville 173
Houston 146
Ashburn 124
Singapore 120
Santa Clara 96
Chandler 95
Ann Arbor 82
Wilmington 81
Seattle 76
Beijing 75
Hong Kong 74
Cambridge 54
Bytom 49
Boardman 42
Princeton 31
Medford 23
Nanjing 22
Munich 21
Ho Chi Minh City 18
Helsinki 16
Dong Ket 15
Bengaluru 13
San Diego 13
Des Moines 12
Hanoi 12
Los Angeles 12
Dublin 11
Roxbury 10
Shenyang 10
New York 9
Cayenne 8
Norwalk 8
Chicago 7
Harare 7
Brooklyn 6
Cagliari 6
Council Bluffs 6
Lima 6
Luanda 6
Panama City 6
Addis Ababa 5
Bishkek 5
Brazzaville 5
Brussels 5
Castries 5
Chisinau 5
Dallas 5
Hebei 5
Hsinchu 5
Nanchang 5
Podgorica 5
São Paulo 5
Tokyo 5
Vienna 5
Accra 4
Andorra la Vella 4
Belgrade 4
Charlotte 4
Dar es Salaam 4
Dili 4
Djibouti 4
Espoo 4
Jiaxing 4
Kathmandu 4
Libreville 4
London 4
Luxembourg 4
Minsk 4
Nairobi 4
Newark 4
Nouakchott 4
Phnom Penh 4
Praia 4
Reykjavik 4
Roermond 4
San José 4
Tbilisi 4
Warsaw 4
Washington 4
Abidjan 3
Amman 3
Amsterdam 3
Antananarivo 3
Auckland 3
Bovolenta 3
Cape Town 3
Changsha 3
Corrientes 3
Cotonou 3
Dushanbe 3
Haiphong 3
Havana 3
Khartoum 3
Lilongwe 3
Melbourne 3
Montevideo 3
Redondo Beach 3
Saarbrücken 3
Totale 2.239
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Nome #
Reliability aspects of GaN-HEMTs on composite substrates 195
Reliability issues of Gallium Nitride High Electron Mobility Transistors 187
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 178
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 167
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 160
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model 157
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 153
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 137
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 131
Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method 130
An investigation of reliability on hybrid substrates GaN-HEMTs 124
A study of trapping phenomena on Recessed-Gate AlGaN/GaN-on- Silicon HEMT 113
GaN Hemt Degradation induced by Reverse Gate Bias Stress 112
Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach 112
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 108
High Robustness GaN HEMT Subject to Reverse Bias Stress 102
Combined electro-optical analysis of trapping effects in AlGaN/GaN HEMTs 101
New reliability understanding on GaN-HEMTs 100
An investigation of defects and reliability issues on Gallium Nitride devices 100
Breakdown Walkout induced by reverse bias stress in AlGaN/GaN HEMTs 96
Trap analysis on GaN HEMT after DC accelerated tests 95
Electrical and reliability investigation of AlGaN/GaN HEMTs grown on 8° off-axis 4H-SiC 87
Kink and Cathodoluminescence in AlGaN/GaN HEMTs 83
Trap related instabilities and localized damages induced by reverse bias” 82
Trapping and high-field characterization in Recessed-Gate AlGaN/GaN-on-Silicon HEMT 81
Latest reliability results in GaN HEMTs devices 74
Reverse gate bias stress induced degradation of GaN HEMT 73
Totale 3.238
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Categoria #
all - tutte 10.028
article - articoli 1.899
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 11.927
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021185 0 0 0 0 16 23 9 24 35 22 30 26
2021/2022225 10 52 24 7 3 10 11 14 7 6 38 43
2022/2023260 45 3 1 34 51 46 0 20 44 0 7 9
2023/2024110 14 14 10 4 7 17 3 13 2 0 11 15
2024/2025593 0 19 15 52 103 54 14 52 31 15 113 125
2025/2026855 68 196 229 242 120 0 0 0 0 0 0 0
Totale 3.238