RONCHI, NICOLO'
 Distribuzione geografica
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Continente #
NA - Nord America 1.583
AS - Asia 223
EU - Europa 197
SA - Sud America 1
Totale 2.004
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Nazione #
US - Stati Uniti d'America 1.580
CN - Cina 129
DE - Germania 55
FI - Finlandia 45
SG - Singapore 38
UA - Ucraina 28
IN - India 26
SE - Svezia 15
VN - Vietnam 15
FR - Francia 11
IT - Italia 11
GB - Regno Unito 8
IE - Irlanda 7
NL - Olanda 7
TW - Taiwan 7
RU - Federazione Russa 6
AT - Austria 3
CA - Canada 3
HK - Hong Kong 3
JP - Giappone 2
KR - Corea 2
BR - Brasile 1
CH - Svizzera 1
TR - Turchia 1
Totale 2.004
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Città #
Woodbridge 224
Fairfield 187
Jacksonville 173
Houston 146
Chandler 95
Santa Clara 93
Ashburn 92
Wilmington 81
Ann Arbor 80
Seattle 75
Cambridge 54
Beijing 43
Boardman 42
Princeton 31
Singapore 25
Medford 23
Nanjing 22
Munich 19
Dong Ket 15
Helsinki 15
San Diego 13
Des Moines 12
Bengaluru 11
Roxbury 10
Shenyang 10
Norwalk 8
Dublin 7
Cagliari 6
Hebei 5
Hsinchu 5
Nanchang 5
New York 5
Espoo 4
Jiaxing 4
Roermond 4
Washington 4
Bovolenta 3
Changsha 3
Saarbrücken 3
Tianjin 3
Chennai 2
Dallas 2
Haikou 2
Jinan 2
Kaohsiung City 2
Laudenbach 2
London 2
Ludwigsfelde 2
Mumbai 2
Osan 2
Tappahannock 2
Vienna 2
Zhengzhou 2
Bordeaux 1
Borås 1
Denver 1
Edinburgh 1
Falls Church 1
Ferrara 1
Fuzhou 1
Guangzhou 1
Kharkiv 1
Kilburn 1
Kobe 1
Kumar 1
Las Vegas 1
Lausanne 1
Ningbo 1
Ogden 1
Padova 1
Pune 1
San Francisco 1
Shinkocho 1
São Paulo 1
Toronto 1
Yenibosna 1
Totale 1.709
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Nome #
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 137
Reliability aspects of GaN-HEMTs on composite substrates 135
Reliability issues of Gallium Nitride High Electron Mobility Transistors 134
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 126
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 113
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 101
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model 100
A study of trapping phenomena on Recessed-Gate AlGaN/GaN-on- Silicon HEMT 86
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 85
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 84
Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method 75
An investigation of reliability on hybrid substrates GaN-HEMTs 73
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 65
GaN Hemt Degradation induced by Reverse Gate Bias Stress 64
High Robustness GaN HEMT Subject to Reverse Bias Stress 62
Trap analysis on GaN HEMT after DC accelerated tests 59
Breakdown Walkout induced by reverse bias stress in AlGaN/GaN HEMTs 58
Combined electro-optical analysis of trapping effects in AlGaN/GaN HEMTs 55
New reliability understanding on GaN-HEMTs 53
Trap related instabilities and localized damages induced by reverse bias” 52
An investigation of defects and reliability issues on Gallium Nitride devices 47
Kink and Cathodoluminescence in AlGaN/GaN HEMTs 46
Reverse gate bias stress induced degradation of GaN HEMT 45
Trapping and high-field characterization in Recessed-Gate AlGaN/GaN-on-Silicon HEMT 44
Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach 44
Electrical and reliability investigation of AlGaN/GaN HEMTs grown on 8° off-axis 4H-SiC 36
Latest reliability results in GaN HEMTs devices 27
Totale 2.006
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Categoria #
all - tutte 6.654
article - articoli 1.363
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.017
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020272 0 0 0 0 0 34 29 43 45 52 43 26
2020/2021240 8 23 4 20 16 23 9 24 35 22 30 26
2021/2022225 10 52 24 7 3 10 11 14 7 6 38 43
2022/2023260 45 3 1 34 51 46 0 20 44 0 7 9
2023/2024110 14 14 10 4 7 17 3 13 2 0 11 15
2024/2025216 0 19 15 52 103 27 0 0 0 0 0 0
Totale 2.006