CHIOCCHETTA, FRANCESCA
 Distribuzione geografica
Continente #
NA - Nord America 562
AS - Asia 233
EU - Europa 207
SA - Sud America 3
AF - Africa 1
Totale 1.006
Nazione #
US - Stati Uniti d'America 560
IT - Italia 127
SG - Singapore 72
CN - Cina 62
TW - Taiwan 33
FI - Finlandia 22
IN - India 20
FR - Francia 19
JP - Giappone 17
NL - Olanda 10
BD - Bangladesh 8
HK - Hong Kong 8
KR - Corea 8
DE - Germania 7
GB - Regno Unito 6
SE - Svezia 5
BE - Belgio 4
BR - Brasile 3
DK - Danimarca 2
GR - Grecia 2
IL - Israele 2
PK - Pakistan 2
AT - Austria 1
CA - Canada 1
MX - Messico 1
PH - Filippine 1
PL - Polonia 1
UA - Ucraina 1
ZA - Sudafrica 1
Totale 1.006
Città #
Fairfield 71
Santa Clara 71
Padova 62
Chandler 59
Singapore 59
Ashburn 44
Cambridge 28
Beijing 27
Houston 27
Boardman 25
Seattle 25
Woodbridge 23
Ann Arbor 18
Wilmington 18
Helsinki 15
San Diego 13
Tokyo 13
Hsinchu 12
Medford 11
Princeton 11
Des Moines 8
Chennai 7
Lappeenranta 7
Nijmegen 7
Taichung 7
Delhi 6
Goleta 6
New York 6
Galliate Lombardo 5
Guangzhou 5
Bengaluru 4
Cagliari 4
Chittagong 4
Riese Pio X 4
Taipei 4
Turin 4
Ulju-gun 4
Washington 4
Agordo 3
Hong Kong 3
London 3
Ma On Shan 3
Modena 3
Patna 3
Pianello Val Tidone 3
São Paulo 3
Toulouse 3
Yangmei District 3
Brussels 2
Central 2
Dallas 2
Dongguan 2
Elspeet 2
Haifa 2
Hounslow 2
Lahore 2
Legnago 2
Leuven 2
Linköping 2
Los Angeles 2
Milan 2
Mira 2
New Taipei 2
Odense 2
Roxbury 2
Taoyuan District 2
Touchongbu 2
Ube 2
Williston 2
Ames 1
Aprilia 1
Atlanta 1
Azzano Decimo 1
Bari 1
Calgary 1
Chiampo 1
Chicago 1
Chifeng 1
Draveil 1
Fuzhou 1
Grenoble 1
Hamburg 1
Hangzhou 1
Hsinchu County 1
Kharkiv 1
Kilburn 1
Krugersdorp 1
Minoh 1
Nanjing 1
New Orleans 1
Norwalk 1
Ravenna 1
Romano d'Ezzelino 1
Taglio di Po 1
Venice 1
Vicenza 1
Villach 1
Warsaw 1
Yongin-si 1
Totale 830
Nome #
Degradation physics of GaN-based lateral and vertical devices 124
STUDY OF TRAPPING IN GALLIUM NITRIDE HEMTS FOR RF APPLICATIONS 102
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 94
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias 79
Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs 70
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons 58
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier 53
Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: From interdiffusion effects to hot-electrons degradation 50
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 49
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 46
Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling 45
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs 38
Review on the degradation of GaN-based lateral power transistors 36
Role of Carbon in dynamic effects and reliability of 0.15 um AlGaN/GaN HEMTs for RF power amplifiers 33
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier 31
Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs 31
Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs 24
Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature 23
Thermally-activated failure mechanisms of 0.25 μm RF AlGaN/GaN HEMTs submitted to long-term life tests 22
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse 15
Totale 1.023
Categoria #
all - tutte 5.772
article - articoli 1.614
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.386


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202064 0 0 0 0 0 3 3 6 20 24 2 6
2020/2021115 2 6 5 3 1 0 24 34 10 7 7 16
2021/2022151 1 7 19 13 5 16 8 21 8 9 9 35
2022/2023185 19 4 11 1 34 27 10 15 26 3 10 25
2023/2024273 30 35 28 23 11 34 17 15 13 18 16 33
2024/2025223 7 43 24 36 73 40 0 0 0 0 0 0
Totale 1.023